MX2020004821A - Fuente de arco con campo magnetico confinado. - Google Patents

Fuente de arco con campo magnetico confinado.

Info

Publication number
MX2020004821A
MX2020004821A MX2020004821A MX2020004821A MX2020004821A MX 2020004821 A MX2020004821 A MX 2020004821A MX 2020004821 A MX2020004821 A MX 2020004821A MX 2020004821 A MX2020004821 A MX 2020004821A MX 2020004821 A MX2020004821 A MX 2020004821A
Authority
MX
Mexico
Prior art keywords
magnetic field
target
cathode assembly
arc source
arc
Prior art date
Application number
MX2020004821A
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Original Assignee
Oerlikon Surface Solutions Ag Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfaeffikon filed Critical Oerlikon Surface Solutions Ag Pfaeffikon
Publication of MX2020004821A publication Critical patent/MX2020004821A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Discharge Heating (AREA)

Abstract

Un evaporador de ARCO que comprende: - un conjunto de cátodo que comprende una placa de enfriamiento (11), un objetivo (1) como elemento de cátodo, - un electrodo dispuesto para permitir que se pueda establecer un arco entre el electrodo y la superficie frontal (1A) del objetivo (1) - un sistema de guía magnética colocado delante de la superficie posterior (1B) del objetivo (i) que comprende medios para generar uno o más magnéticos mientras que: - los bordes del conjunto de cátodo comprenden un blindaje circundante (15) fabricado de material ferromagnético, en el que el blindaje circundante (15) tiene una altura total (H) en la dirección transversal, dicha altura total (H) incluye un componente (C) para causar un efecto de blindaje de líneas de campo magnético que se extienden en cualquier dirección longitudinal, estableciendo de esta manera los bordes del conjunto de cátodo como límite de la extensión de las líneas de campo magnético en cualquier dirección longitudinal.
MX2020004821A 2017-10-03 2018-10-04 Fuente de arco con campo magnetico confinado. MX2020004821A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762567423P 2017-10-03 2017-10-03
PCT/EP2018/000459 WO2019081052A1 (en) 2017-10-03 2018-10-04 CONFINED MAGNETIC FIELD ARC SOURCE

Publications (1)

Publication Number Publication Date
MX2020004821A true MX2020004821A (es) 2020-08-13

Family

ID=64572281

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2020004821A MX2020004821A (es) 2017-10-03 2018-10-04 Fuente de arco con campo magnetico confinado.
MX2020003372A MX2020003372A (es) 2017-10-03 2018-10-04 Fuente de arco.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2020003372A MX2020003372A (es) 2017-10-03 2018-10-04 Fuente de arco.

Country Status (11)

Country Link
US (2) US11578401B2 (es)
EP (2) EP3692184B1 (es)
JP (2) JP7344483B2 (es)
KR (2) KR102667844B1 (es)
CN (2) CN111279014A (es)
CA (2) CA3078100A1 (es)
MX (2) MX2020004821A (es)
MY (1) MY203523A (es)
RU (2) RU2020113435A (es)
SG (2) SG11202002992TA (es)
WO (2) WO2019081053A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7712219B2 (ja) * 2019-07-03 2025-07-23 エーリコン・サーフェス・ソリューションズ・アーゲー・プフェフィコン 陰極アーク源
US20250230537A1 (en) * 2024-01-11 2025-07-17 Ge Infrastructure Technology Llc Hybrid Cathodes for ION Plasma Deposition Systems and Methods

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448659A (en) * 1983-09-12 1984-05-15 Vac-Tec Systems, Inc. Method and apparatus for evaporation arc stabilization including initial target cleaning
US4724058A (en) * 1984-08-13 1988-02-09 Vac-Tec Systems, Inc. Method and apparatus for arc evaporating large area targets
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
RU2074904C1 (ru) 1992-11-23 1997-03-10 Евгений Николаевич Ивашов Катодный узел для ионно-плазменного нанесения тонких пленок в вакууме
RU2135634C1 (ru) 1998-06-15 1999-08-27 Санкт-Петербургский государственный технический университет Способ и устройство магнетронного распыления
US6929727B2 (en) * 1999-04-12 2005-08-16 G & H Technologies, Llc Rectangular cathodic arc source and method of steering an arc spot
US6645354B1 (en) * 2000-04-07 2003-11-11 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
US20040112736A1 (en) * 2001-03-27 2004-06-17 Larrinaga Josu Goikoetxea Arc evaporator with a poweful magnetic guide for targets having a large surface area
DE10127013A1 (de) 2001-06-05 2002-12-12 Gabriel Herbert M Lichtbogen-Verdampfungsvorrichtung
ES2342835T3 (es) 2005-12-16 2010-07-15 Fundacion Tekniker Maquina de evaporacion catodica.
EP2466614A3 (de) * 2006-05-16 2013-05-22 Oerlikon Trading AG, Trübbach Arcquelle und Magnetanordnung
CN101358328A (zh) 2007-12-28 2009-02-04 中国科学院金属研究所 一种动态受控电弧离子镀弧源
JP5496223B2 (ja) * 2008-12-26 2014-05-21 フンダシオン テクニケル アーク・エバポレーターおよびアーク・エバポレーターの操作方法
JP5494663B2 (ja) * 2009-08-19 2014-05-21 日新電機株式会社 アーク蒸発源及び真空蒸着装置
JP5721813B2 (ja) 2010-05-04 2015-05-20 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ セラミックターゲットによって火花蒸着をする方法
UA101678C2 (uk) * 2011-04-08 2013-04-25 Национальный Научный Центр "Харьковский Физико-Технический Институт" Вакуумно-дуговий випарник для генерування катодної плазми
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RU2482217C1 (ru) * 2012-02-28 2013-05-20 Открытое акционерное общество "Национальный институт авиационных технологий" Вакуумно-дуговой источник плазмы
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AT13830U1 (de) * 2013-04-22 2014-09-15 Plansee Se Lichtbogenverdampfungs-Beschichtungsquelle
CN106756819A (zh) * 2016-09-30 2017-05-31 广东省新材料研究所 一种MCrAlY高温防护涂层制备方法

Also Published As

Publication number Publication date
US11578401B2 (en) 2023-02-14
RU2020113430A3 (es) 2021-11-29
EP3692184B1 (en) 2024-04-17
BR112020006715A2 (pt) 2020-10-06
KR102667843B1 (ko) 2024-05-22
KR20200063204A (ko) 2020-06-04
SG11202002992TA (en) 2020-04-29
US20200299824A1 (en) 2020-09-24
CA3077570A1 (en) 2019-05-02
EP3692183A1 (en) 2020-08-12
CN111315915A (zh) 2020-06-19
WO2019081052A1 (en) 2019-05-02
JP2020536171A (ja) 2020-12-10
JP7344483B2 (ja) 2023-09-14
MX2020003372A (es) 2020-07-29
RU2020113430A (ru) 2021-11-08
JP2020536170A (ja) 2020-12-10
RU2020113435A3 (es) 2022-02-22
RU2020113435A (ru) 2021-11-08
US20200255932A1 (en) 2020-08-13
CN111279014A (zh) 2020-06-12
KR20200063203A (ko) 2020-06-04
KR102667844B1 (ko) 2024-05-22
MY203523A (en) 2024-07-02
JP7212234B2 (ja) 2023-01-25
SG11202002991YA (en) 2020-04-29
US11306390B2 (en) 2022-04-19
CA3078100A1 (en) 2019-05-02
WO2019081053A1 (en) 2019-05-02
EP3692184A1 (en) 2020-08-12
BR112020006716A2 (pt) 2020-10-06

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