JP5714594B2 - 箔(ホイル)を用いた染料感応太陽電池モジュールの製造方法およびこれによって製造される染料感応太陽電池モジュール - Google Patents
箔(ホイル)を用いた染料感応太陽電池モジュールの製造方法およびこれによって製造される染料感応太陽電池モジュール Download PDFInfo
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- 239000011888 foil Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 239000003054 catalyst Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 23
- 239000003792 electrolyte Substances 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000002788 crimping Methods 0.000 claims 2
- 238000000034 method Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910000314 transition metal oxide Inorganic materials 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 e.g. Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2081—Serial interconnection of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Energy (AREA)
- Materials Engineering (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
- Connection Of Batteries Or Terminals (AREA)
Description
したがって、これら電気的連結部位における電気的連結において接触抵抗を最少化し、均一な接触を行うことができる製造方法の開発が切実であるのが実情である。
10b 下面ガラス基板(作用極)
20a 上面TCO層(触媒極)
20b 下面TCO層(作用極)
30 触媒層(触媒電極、主にPt)
40 電解質
50 染料+遷移金属酸化物層
60 封止部
70 セル間電気的連結
80 セル間封止部
100 金属箔
110 金属箔の電気通電溶融物の凝固体
200 伝導体(金属ペースト)
Claims (10)
- 対向して配置された作用極基板と触媒極基板および、これら基板の間に充填される電解質を含む染料感応太陽電池を集積して形成される染料感応太陽電池モジュールの製造方法において、
前記作用極基板と触媒極基板の電極の間の電気的連結が、
前記両基板電極の対向部分の間に金属箔を挿入し、前記両基板が互いに接触するように圧着する間に、前記金属箔を電気を通電させて溶融して前記両基板電極の間の結合が行われるようにし、
前記圧着の圧力は、0.01〜10MPaであることを特徴とする箔を用いた染料感応太陽電池モジュールの製造方法。 - 対向して配置された作用極基板と触媒極基板および、これら基板の間に充填される電解質を含む染料感応太陽電池を集積して形成される染料感応太陽電池モジュールの製造方法において、
前記作用極基板と触媒極基板の電極の間の電気的連結が、
前記両基板電極の対向部分に伝導体をコーティングし、前記伝導体の間に金属箔を挿入して前記両基板を互いに接触するように圧着する間に、前記金属箔を電気を通電させて溶融して前記伝導体と結合するようにして、前記両基板電極の間の結合が行われるようにし、
前記圧着の圧力は、0.01〜10MPaであることを特徴とする箔を用いた染料感応太陽電池モジュールの製造方法。 - 前記金属箔は、錫または錫合金またはインジウムまたはインジウム合金の薄板であることを特徴とする、請求項1または2に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 前記金属箔の厚さは10nm〜30μmであることを特徴とする、請求項1または2に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 前記金属箔の厚さは10nm〜2000nmであることを特徴とする、請求項1または2に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 前記電気通電は、1〜100Vであることを特徴とする、請求項1または2に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 前記伝導体は、前記金属箔の溶融点より高い溶融点を有する金属ペーストであることを特徴とする、請求項2に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 前記伝導体は、銀(Ag)ペーストであることを特徴とする、請求項7に記載の箔を用いた染料感応太陽電池モジュールの製造方法。
- 対向して配置された作用極基板と触媒極基板および、これら基板の間に充填される電解質を含む染料感応太陽電池を集積して形成される染料感応太陽電池モジュールにおいて、
前記作用極基板と触媒極基板の電極の間の電気的連結は、
前記電極の間に接触して配置される金属箔の電気通電溶融物の凝固体を含み、
前記金属箔の電気通電溶融物の凝固体は、請求項1の製造方法で製造されることを特徴とする箔を用いた染料感応太陽電池モジュール。 - 対向して配置された作用極基板と触媒極基板および、これら基板の間に充填される電解質を含む染料感応太陽電池を集積して形成される染料感応太陽電池モジュールにおいて、
前記作用極基板と触媒極基板の電極の間の電気的連結は、
前記電極の間の接触面にそれぞれ配置される伝導体および、
前記伝導体の間に接触して配置される金属箔の電気通電溶融物の凝固体を含み、
前記金属箔の電気通電溶融物の凝固体は、請求項2の製造方法で製造されることを特徴とする箔を用いた染料感応太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0099846 | 2009-10-20 | ||
KR20090099846 | 2009-10-20 | ||
PCT/KR2010/006997 WO2011049316A2 (ko) | 2009-10-20 | 2010-10-13 | 호일을 이용한 염료감응태양전지모듈의 제조방법 및 이에 의해 제조되는 염료감응태양전지 |
Publications (2)
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JP2013508912A JP2013508912A (ja) | 2013-03-07 |
JP5714594B2 true JP5714594B2 (ja) | 2015-05-07 |
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Country Status (5)
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JP (1) | JP5714594B2 (ja) |
KR (1) | KR20110043454A (ja) |
CN (1) | CN102576771B (ja) |
DE (1) | DE112010004091T5 (ja) |
WO (1) | WO2011049316A2 (ja) |
Families Citing this family (6)
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CN102509649B (zh) * | 2011-11-18 | 2014-06-11 | 中国科学院等离子体物理研究所 | 一种染料敏化太阳电池的新型连接方法以及插件结构 |
JP5656910B2 (ja) * | 2012-04-26 | 2015-01-21 | 日本写真印刷株式会社 | 太陽電池モジュール及びその接続方法 |
JP6000808B2 (ja) * | 2012-11-06 | 2016-10-05 | 日本写真印刷株式会社 | 色素増感型太陽電池モジュール |
CN103840024B (zh) * | 2012-11-23 | 2018-03-13 | 北京创昱科技有限公司 | 一种互联式柔性太阳能电池及其制作方法 |
KR101646727B1 (ko) * | 2013-10-10 | 2016-08-08 | 한양대학교 산학협력단 | 태양 전지 및 그 제조 방법 |
KR101663079B1 (ko) * | 2015-01-29 | 2016-10-17 | 주식회사 상보 | 직렬형 염료감응 태양전지 모듈 및 그 제조방법 |
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JPH1190621A (ja) * | 1997-09-16 | 1999-04-06 | Mazda Motor Corp | 金属部材の接合方法及び接合装置 |
AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
CN1175953C (zh) * | 2001-05-23 | 2004-11-17 | 中国科学院金属研究所 | 一种锆基非晶块体材料的电阻焊接方法 |
KR100572928B1 (ko) * | 2004-02-27 | 2006-04-24 | 한국전기연구원 | 교번 극성의 단위 셀의 배열구조를 갖는 염료감응형태양전지 |
KR100995073B1 (ko) * | 2004-04-23 | 2010-11-18 | 삼성에스디아이 주식회사 | 염료감응 태양전지의 모듈 및 그 제조방법 |
KR100567331B1 (ko) * | 2004-08-04 | 2006-04-04 | 한국전자통신연구원 | 레고형 염료감응 태양전지 모듈 |
JP2007059322A (ja) * | 2005-08-26 | 2007-03-08 | Kansai Paint Co Ltd | 電極パターン間の接続方法及び光電池モジュール |
KR100834475B1 (ko) * | 2006-11-30 | 2008-06-05 | 한국전기연구원 | 탄소나노튜브 전극을 이용한 염료감응형 태양전지 모듈 및그 제조방법 |
CN201100615Y (zh) * | 2007-09-17 | 2008-08-13 | 亿光电子工业股份有限公司 | 电阻式结合的发光装置 |
-
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- 2010-10-12 KR KR1020100099396A patent/KR20110043454A/ko not_active Application Discontinuation
- 2010-10-13 WO PCT/KR2010/006997 patent/WO2011049316A2/ko active Application Filing
- 2010-10-13 CN CN201080047596.0A patent/CN102576771B/zh not_active Expired - Fee Related
- 2010-10-13 JP JP2012535113A patent/JP5714594B2/ja not_active Expired - Fee Related
- 2010-10-13 DE DE112010004091T patent/DE112010004091T5/de not_active Withdrawn
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KR20110043454A (ko) | 2011-04-27 |
CN102576771B (zh) | 2015-08-12 |
WO2011049316A3 (ko) | 2011-11-03 |
JP2013508912A (ja) | 2013-03-07 |
DE112010004091T5 (de) | 2012-09-27 |
WO2011049316A2 (ko) | 2011-04-28 |
CN102576771A (zh) | 2012-07-11 |
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