JP5695669B2 - 気化装置及びこの制御方法 - Google Patents
気化装置及びこの制御方法 Download PDFInfo
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- JP5695669B2 JP5695669B2 JP2012547002A JP2012547002A JP5695669B2 JP 5695669 B2 JP5695669 B2 JP 5695669B2 JP 2012547002 A JP2012547002 A JP 2012547002A JP 2012547002 A JP2012547002 A JP 2012547002A JP 5695669 B2 JP5695669 B2 JP 5695669B2
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- vaporization
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0011—Heating features
- B01D1/0017—Use of electrical or wave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
110:液化ルツボ
120:ピストン部
130:液化加熱部
200:原料気化部
210:筐体
220:気化器
221:気化ルツボ
222:気化加熱部
230:温度測定部
240:電源測定部
300:インジェクター
400:送り管
500:制御部
Claims (13)
- 固相の原料物質が貯蔵される液化ルツボと、前記液化ルツボを加熱して原料物質を液化させる液化加熱部と、前記液化ルツボの一方の側に装入されて原料物質を押し付けて外部に排出するピストン部とを有する原料供給部と、
前記液化ルツボから原料物質が供給される気化ルツボと、
前記気化ルツボを加熱して前記原料物質を気化させる気化加熱部と、
前記気化ルツボの温度変化値を測定する温度測定部と、
前記気化加熱部の電源変化値を測定する電源測定部と、
前記気化ルツボを取り囲む筐体内部又は前記気化ルツボ内部の気化圧力を測定する圧力ゲージと、
前記温度測定部の温度変化値、前記電源測定部の電源変化値及び前記圧力ゲージの気化圧力のうちの少なくとも一つに基づいて、前記原料物質の気化量を計算するとともに、前記気化量に基づいて、前記ピストン部の前進速度を制御して前記気化ルツボに供給される原料物質の供給量を制御することにより、原料物質の気化量を調節する制御部と、
を備え、
前記電源変化値は、電力、電圧、電流のうちのいずれか一つの変化値を含む気化装置。 - 前記制御部は、前記気化ルツボの温度を一定に維持した状態で前記電源測定部の電源変化値に基づいて原料物質の気化量を調節する請求項1に記載の気化装置。
- 前記制御部は、前記気化加熱部の電源値を一定に維持した状態で前記温度測定部の温度変化値に基づいて原料物質の気化量を調節し、
前記電源値は、電力、電圧、電流のうちのいずれか一つを含む請求項1に記載の気化装置。 - 前記温度測定部は、前記気化ルツボの内部に設けられる請求項1に記載の気化装置。
- 前記気化ルツボは、
前記原料物質が収容される内部空間が形成された胴体部と、
前記胴体部に取設されて内部空間に収容された原料物質を排出するための少なくとも一つの排出口が形成された排出板と、
を備える請求項1に記載の気化装置。 - 前記排出板は多数設けられて前記胴体部の内部空間を上下に画成する請求項5に記載の気化装置。
- 前記排出板には気化加熱部が埋設される請求項5に記載の気化装置。
- 前記排出板の外側表面は、中心部と周辺部の高さが異なるように形成された請求項5に記載の気化装置。
- 前記排出板の外側表面は、電灯のかさ状または漏斗状を呈する請求項8に記載の気化装置。
- 原料物質が貯蔵される液化ルツボの一方の側に装入されたピストン部を前進させて原料物質を押し付けて外部に排出することにより、気化ルツボに原料物質を供給するステップと、
前記原料物質の気化のために気化加熱部により前記気化ルツボを加熱するステップと、
前記気化ルツボを取り囲む筐体内部又は前記気化ルツボ内部の気化圧力、前記気化ルツボの温度変化値及び前記気化加熱部の電源変化値のうちの少なくとも一つを測定して、前記原料物質の気化量を計算するステップと、
前記気化量に基づいて、前記ピストン部の前進速度を制御することにより、前記気化ルツボに供給される原料物質の供給量を制御するステップと、
を含み、
前記電源変化値は、電力、電圧、電流のうちのいずれか一つの変化値を含む気化装置の制御方法。 - 前記温度変化値は、
前記気化加熱部の電源値を一定に維持した状態で前記気化ルツボの温度変化値を測定し、
前記電源値は、電力、電圧、電流のうちのいずれか一つを含む請求項10に記載の気化装置の制御方法。 - 前記電源変化値は、
前記気化ルツボの温度を一定に維持した状態で前記気化加熱部の電源変化値を測定する請求項10に記載の気化装置の制御方法。 - 前記気化量を計算するステップは、
前記気化ルツボを取り囲む筐体内部の圧力変化値を測定するステップを含み、
前記原料物質の気化量は、
前記温度変化値及び電源変化値のうちのいずれか一方と、前記圧力変化値を用いて計算する請求項10に記載の気化装置の制御方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090135890A KR101172275B1 (ko) | 2009-12-31 | 2009-12-31 | 기화 장치 및 이의 제어 방법 |
KR10-2009-0135890 | 2009-12-31 | ||
PCT/KR2010/009316 WO2011081368A2 (en) | 2009-12-31 | 2010-12-24 | Vaporization apparatus and method for controlling the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013515862A JP2013515862A (ja) | 2013-05-09 |
JP5695669B2 true JP5695669B2 (ja) | 2015-04-08 |
Family
ID=44226984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012547002A Expired - Fee Related JP5695669B2 (ja) | 2009-12-31 | 2010-12-24 | 気化装置及びこの制御方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130011804A1 (ja) |
EP (1) | EP2519656B1 (ja) |
JP (1) | JP5695669B2 (ja) |
KR (1) | KR101172275B1 (ja) |
CN (1) | CN102712994B (ja) |
TW (1) | TWI440792B (ja) |
WO (1) | WO2011081368A2 (ja) |
Families Citing this family (14)
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JP2012046814A (ja) * | 2010-08-30 | 2012-03-08 | Kaneka Corp | 蒸着装置 |
WO2012124524A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 蒸着粒子射出装置および蒸着装置 |
TW201339354A (zh) * | 2011-11-01 | 2013-10-01 | Beneq Oy | 基板處理裝置及方法 |
KR20140073198A (ko) | 2012-12-06 | 2014-06-16 | 삼성디스플레이 주식회사 | 유기물 기화 장치 및 그 제어방법 |
KR101284585B1 (ko) * | 2013-01-21 | 2013-07-11 | 주식회사 썬닉스 | 반도체 장치 제조 설비 및 그의 제어 방법 |
DE102013219999A1 (de) * | 2013-10-02 | 2015-04-02 | Singulus Technologies Ag | Tiegelverdampfer |
FR3041545B1 (fr) * | 2015-09-28 | 2019-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de conversion d'un liquide en vapeur et procede de regulation d'une puissance de chauffage associe |
KR101713113B1 (ko) * | 2016-07-26 | 2017-03-08 | 에스엔유 프리시젼 주식회사 | 증착물질 공급장치 |
KR101713112B1 (ko) * | 2016-07-26 | 2017-03-08 | 에스엔유 프리시젼 주식회사 | 연속 충진이 가능한 증착물질 공급장치 |
WO2018020296A1 (en) * | 2016-07-27 | 2018-02-01 | Arcelormittal | Apparatus and method for vacuum deposition |
KR20200076389A (ko) * | 2018-12-19 | 2020-06-29 | 주식회사 포스코 | Pvd 도금 공정에서의 도금층 제어 장치 및 방법 |
EP3715499A1 (en) * | 2019-03-29 | 2020-09-30 | Picosun Oy | Substrate coating |
KR200494277Y1 (ko) * | 2020-10-15 | 2021-09-08 | 주식회사 야스 | 균등 증발원 |
KR102358204B1 (ko) | 2020-12-08 | 2022-02-07 | (주)데포랩 | 압력센서 |
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-
2009
- 2009-12-31 KR KR1020090135890A patent/KR101172275B1/ko not_active IP Right Cessation
-
2010
- 2010-12-24 EP EP10841200.8A patent/EP2519656B1/en not_active Not-in-force
- 2010-12-24 CN CN201080060061.7A patent/CN102712994B/zh not_active Expired - Fee Related
- 2010-12-24 WO PCT/KR2010/009316 patent/WO2011081368A2/en active Application Filing
- 2010-12-24 US US13/520,186 patent/US20130011804A1/en not_active Abandoned
- 2010-12-24 JP JP2012547002A patent/JP5695669B2/ja not_active Expired - Fee Related
- 2010-12-28 TW TW099146317A patent/TWI440792B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102712994A (zh) | 2012-10-03 |
KR20110078959A (ko) | 2011-07-07 |
WO2011081368A2 (en) | 2011-07-07 |
EP2519656B1 (en) | 2017-10-04 |
EP2519656A4 (en) | 2014-08-20 |
TWI440792B (zh) | 2014-06-11 |
JP2013515862A (ja) | 2013-05-09 |
CN102712994B (zh) | 2014-08-20 |
KR101172275B1 (ko) | 2012-08-08 |
US20130011804A1 (en) | 2013-01-10 |
TW201131101A (en) | 2011-09-16 |
EP2519656A2 (en) | 2012-11-07 |
WO2011081368A3 (en) | 2011-10-27 |
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