JP5689581B2 - ポリシリコンの除去を制御するための方法 - Google Patents

ポリシリコンの除去を制御するための方法 Download PDF

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Publication number
JP5689581B2
JP5689581B2 JP2008534569A JP2008534569A JP5689581B2 JP 5689581 B2 JP5689581 B2 JP 5689581B2 JP 2008534569 A JP2008534569 A JP 2008534569A JP 2008534569 A JP2008534569 A JP 2008534569A JP 5689581 B2 JP5689581 B2 JP 5689581B2
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JP
Japan
Prior art keywords
polishing
pluronic
polysilicon
substrate
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008534569A
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English (en)
Japanese (ja)
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JP2009510797A5 (https=
JP2009510797A (ja
Inventor
ディサード，ジェフリー
ジョーンズ，ティモシー
フィーニー，ポール
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CMC Materials LLC
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Cabot Microelectronics Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008534569A 2005-10-04 2006-09-29 ポリシリコンの除去を制御するための方法 Expired - Fee Related JP5689581B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/243,140 US20070077865A1 (en) 2005-10-04 2005-10-04 Method for controlling polysilicon removal
US11/243,140 2005-10-04
PCT/US2006/037831 WO2007041203A1 (en) 2005-10-04 2006-09-29 Method for controlling polysilicon removal

Publications (3)

Publication Number Publication Date
JP2009510797A JP2009510797A (ja) 2009-03-12
JP2009510797A5 JP2009510797A5 (https=) 2009-11-05
JP5689581B2 true JP5689581B2 (ja) 2015-03-25

Family

ID=37499658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008534569A Expired - Fee Related JP5689581B2 (ja) 2005-10-04 2006-09-29 ポリシリコンの除去を制御するための方法

Country Status (6)

Country Link
US (1) US20070077865A1 (https=)
JP (1) JP5689581B2 (https=)
KR (1) KR101165875B1 (https=)
CN (1) CN101322227B (https=)
TW (1) TWI316272B (https=)
WO (1) WO2007041203A1 (https=)

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Also Published As

Publication number Publication date
TW200731383A (en) 2007-08-16
WO2007041203A1 (en) 2007-04-12
KR101165875B1 (ko) 2012-07-13
KR20080064823A (ko) 2008-07-09
CN101322227A (zh) 2008-12-10
US20070077865A1 (en) 2007-04-05
JP2009510797A (ja) 2009-03-12
TWI316272B (en) 2009-10-21
CN101322227B (zh) 2010-12-01

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