JP5681878B2 - パターン化導体、半導体及び誘電体材料のための印刷処理 - Google Patents

パターン化導体、半導体及び誘電体材料のための印刷処理 Download PDF

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JP5681878B2
JP5681878B2 JP2010506708A JP2010506708A JP5681878B2 JP 5681878 B2 JP5681878 B2 JP 5681878B2 JP 2010506708 A JP2010506708 A JP 2010506708A JP 2010506708 A JP2010506708 A JP 2010506708A JP 5681878 B2 JP5681878 B2 JP 5681878B2
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precursor
ink
substrate
molecular weight
silicon
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JP2010526445A5 (enExample
JP2010526445A (ja
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エリック シャー，
エリック シャー，
アーヴィンド カマス，
アーヴィンド カマス，
ジョーグ ロッケンバーガー，
ジョーグ ロッケンバーガー，
育雄 森
育雄 森
スティーヴン モレサ，
スティーヴン モレサ，
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シン フィルム エレクトロニクス エーエスエー
シン フィルム エレクトロニクス エーエスエー
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
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    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
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    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/36—Inkjet printing inks based on non-aqueous solvents
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    • C09D11/00—Inks
    • C09D11/54—Inks based on two liquids, one liquid being the ink, the other liquid being a reaction solution, a fixer or a treatment solution for the ink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02623—Liquid deposition
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/67—Thin-film transistors [TFT]
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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  • Engineering & Computer Science (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2010506708A 2007-05-04 2008-05-03 パターン化導体、半導体及び誘電体材料のための印刷処理 Active JP5681878B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US92798407P 2007-05-04 2007-05-04
US60/927,984 2007-05-04
US99733507P 2007-10-01 2007-10-01
US60/997,335 2007-10-01
US12/114,741 2008-05-02
US12/114,741 US8530589B2 (en) 2007-05-04 2008-05-02 Print processing for patterned conductor, semiconductor and dielectric materials
PCT/US2008/062586 WO2008137811A2 (en) 2007-05-04 2008-05-03 Print processing for patterned conductor, semiconductor and dielectric materials

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JP2010526445A JP2010526445A (ja) 2010-07-29
JP2010526445A5 JP2010526445A5 (enExample) 2011-09-29
JP5681878B2 true JP5681878B2 (ja) 2015-03-11

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US (2) US8530589B2 (enExample)
EP (1) EP2145350B1 (enExample)
JP (1) JP5681878B2 (enExample)
KR (1) KR101526021B1 (enExample)
CN (1) CN101681800B (enExample)
WO (1) WO2008137811A2 (enExample)

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CN101681800B (zh) 2013-01-30
EP2145350B1 (en) 2020-04-15
US8530589B2 (en) 2013-09-10
WO2008137811A2 (en) 2008-11-13
EP2145350A2 (en) 2010-01-20
US20130344301A1 (en) 2013-12-26
KR20100016173A (ko) 2010-02-12
CN101681800A (zh) 2010-03-24
EP2145350A4 (en) 2011-10-26
US20090065776A1 (en) 2009-03-12
KR101526021B1 (ko) 2015-06-04
WO2008137811A3 (en) 2009-12-30
JP2010526445A (ja) 2010-07-29

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