JP5677700B2 - ビーム誘起処理における窒素ベース化合物の使用 - Google Patents
ビーム誘起処理における窒素ベース化合物の使用 Download PDFInfo
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- JP5677700B2 JP5677700B2 JP2010198850A JP2010198850A JP5677700B2 JP 5677700 B2 JP5677700 B2 JP 5677700B2 JP 2010198850 A JP2010198850 A JP 2010198850A JP 2010198850 A JP2010198850 A JP 2010198850A JP 5677700 B2 JP5677700 B2 JP 5677700B2
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- 150000001875 compounds Chemical class 0.000 title claims description 71
- 238000012545 processing Methods 0.000 title claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title description 16
- 229910052757 nitrogen Inorganic materials 0.000 title description 10
- 239000007789 gas Substances 0.000 claims description 190
- 239000002243 precursor Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 99
- 238000000151 deposition Methods 0.000 claims description 98
- 230000008021 deposition Effects 0.000 claims description 93
- 238000010894 electron beam technology Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 37
- 238000000746 purification Methods 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 20
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- -1 hydrazine compound Chemical class 0.000 claims description 15
- 239000000356 contaminant Substances 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 150000001408 amides Chemical class 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 61
- 230000008569 process Effects 0.000 description 60
- 238000000313 electron-beam-induced deposition Methods 0.000 description 38
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 36
- 238000005530 etching Methods 0.000 description 31
- 239000012159 carrier gas Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 18
- 229910021529 ammonia Inorganic materials 0.000 description 17
- 239000010931 gold Substances 0.000 description 16
- 238000005137 deposition process Methods 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 230000007613 environmental effect Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
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- 238000006243 chemical reaction Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
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- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
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- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000001099 ammonium carbonate Substances 0.000 description 3
- 235000012501 ammonium carbonate Nutrition 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000001404 mediated effect Effects 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000001888 ion beam-induced deposition Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0031—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/565,707 | 2009-09-23 | ||
| US12/565,707 US8617668B2 (en) | 2009-09-23 | 2009-09-23 | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011080142A JP2011080142A (ja) | 2011-04-21 |
| JP2011080142A5 JP2011080142A5 (enExample) | 2013-10-24 |
| JP5677700B2 true JP5677700B2 (ja) | 2015-02-25 |
Family
ID=43037099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010198850A Expired - Fee Related JP5677700B2 (ja) | 2009-09-23 | 2010-09-06 | ビーム誘起処理における窒素ベース化合物の使用 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8617668B2 (enExample) |
| EP (1) | EP2309020B1 (enExample) |
| JP (1) | JP5677700B2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011060444A2 (en) | 2009-11-16 | 2011-05-19 | Fei Company | Gas delivery for beam processing systems |
| EP2402475A1 (en) | 2010-06-30 | 2012-01-04 | Fei Company | Beam-induced deposition at cryogenic temperatures |
| US10825685B2 (en) * | 2010-08-23 | 2020-11-03 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
| US8853078B2 (en) | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
| US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
| RU2522872C2 (ru) * | 2012-06-13 | 2014-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ азотирования деталей машин с получением наноструктурированного приповерхностного слоя и состав слоя |
| US10023955B2 (en) | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
| US8872105B2 (en) * | 2013-02-19 | 2014-10-28 | Fei Company | In situ reactivation of fluorescence marker |
| EP2787523B1 (en) | 2013-04-03 | 2016-02-10 | Fei Company | Low energy ion milling or deposition |
| US9123506B2 (en) * | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
| FR3011540B1 (fr) * | 2013-10-07 | 2016-01-01 | Centre Nat Rech Scient | Procede et systeme de structuration submicrometrique d'une surface de substrat |
| US20150225845A1 (en) * | 2014-02-12 | 2015-08-13 | Electronics And Telecommunications Research Institute | Method for forming metal oxide thin film and device for printing metal oxide thin film |
| EP3062329B1 (en) * | 2015-02-25 | 2016-12-14 | Fei Company | Multi-source GIS for particle-optical apparatus |
| US9799490B2 (en) | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
| US9633816B2 (en) | 2015-05-18 | 2017-04-25 | Fei Company | Electron beam microscope with improved imaging gas and method of use |
| US10128082B2 (en) * | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
| US10538844B2 (en) | 2015-09-11 | 2020-01-21 | Fei Company | Nanofabrication using a new class of electron beam induced surface processing techniques |
| KR101723923B1 (ko) * | 2015-11-11 | 2017-04-11 | 참엔지니어링(주) | 증착 장치 |
| US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
| US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
| US10501851B2 (en) | 2016-05-12 | 2019-12-10 | Fei Company | Attachment of nano-objects to beam-deposited structures |
| US20220305584A1 (en) * | 2021-03-24 | 2022-09-29 | Fei Company | In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination |
| CN113403572A (zh) * | 2021-04-19 | 2021-09-17 | 江苏集创原子团簇科技研究院有限公司 | 一种带电粒子束处理工件的方法与设备 |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US525908A (en) | 1894-09-11 | Convertible carriage-body | ||
| US4266985A (en) * | 1979-05-18 | 1981-05-12 | Fujitsu Limited | Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
| JPH0830272B2 (ja) | 1983-08-22 | 1996-03-27 | 日本電気株式会社 | 薄膜形成方法 |
| US4605566A (en) | 1983-08-22 | 1986-08-12 | Nec Corporation | Method for forming thin films by absorption |
| US4522886A (en) * | 1984-10-09 | 1985-06-11 | Allied Corporation | Method of ion beam synthesis of thin silicon nitride films and resulting articles |
| DE3513633C2 (de) * | 1985-04-16 | 1994-06-16 | Polymer Physik Gmbh | Vorrichtung zur Entschwefelung und Denitrierung von Rauchgasen durch Elektronenbestrahlung |
| US4845054A (en) | 1985-06-14 | 1989-07-04 | Focus Semiconductor Systems, Inc. | Low temperature chemical vapor deposition of silicon dioxide films |
| JPS62195662A (ja) | 1986-02-24 | 1987-08-28 | Seiko Instr & Electronics Ltd | マスクリペア方法及び装置 |
| JPH0763064B2 (ja) | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ｉｃ素子における配線接続方法 |
| JPS62281349A (ja) | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
| JPS6380525A (ja) * | 1986-09-24 | 1988-04-11 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| US4735921A (en) * | 1987-05-29 | 1988-04-05 | Patrick Soukiassian | Nitridation of silicon and other semiconductors using alkali metal catalysts |
| JPH0262039A (ja) | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
| JP3004298B2 (ja) | 1989-03-31 | 2000-01-31 | 株式会社東芝 | 絶縁膜堆積方法及びそれに用いる集束イオンビーム装置 |
| US5083033A (en) | 1989-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Method of depositing an insulating film and a focusing ion beam apparatus |
| JPH02274867A (ja) * | 1989-04-17 | 1990-11-09 | Seiko Instr Inc | 複合材料膜の製造方法 |
| US5104684A (en) | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
| US5196102A (en) | 1991-08-08 | 1993-03-23 | Microelectronics And Computer Technology Corporation | Method and apparatus for applying a compound of a metal and a gas onto a surface |
| JPH0799791B2 (ja) * | 1992-04-15 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 透明基板上の回路ライン接続方法 |
| DE4222021C2 (de) * | 1992-07-04 | 1994-06-23 | Christian Dipl Chem Terfloth | Verbindungen zur Abscheidung von Kupferschichten |
| EP0637057B1 (en) * | 1993-07-30 | 1996-12-11 | International Business Machines Corporation | Method and apparatus for depositing metal fine lines on a substrate |
| US5482802A (en) | 1993-11-24 | 1996-01-09 | At&T Corp. | Material removal with focused particle beams |
| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| WO1996000803A1 (en) | 1994-06-28 | 1996-01-11 | Fei Company | Charged particle deposition of electrically insulating films |
| US5700526A (en) | 1995-05-04 | 1997-12-23 | Schlumberger Technologies Inc. | Insulator deposition using focused ion beam |
| US5948541A (en) * | 1996-04-04 | 1999-09-07 | Kennametal Inc. | Boron and nitrogen containing coating and method for making |
| WO1997038355A1 (en) | 1996-04-08 | 1997-10-16 | Micrion Corporation | Systems and methods for deposition of dielectric films |
| JPH1090876A (ja) | 1996-09-17 | 1998-04-10 | Toshiba Corp | 欠陥修正方法および装置 |
| US6042738A (en) | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
| US5976976A (en) | 1997-08-21 | 1999-11-02 | Micron Technology, Inc. | Method of forming titanium silicide and titanium by chemical vapor deposition |
| US6395128B2 (en) | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| US6261850B1 (en) | 1998-09-03 | 2001-07-17 | Micron Technology, Inc. | Direct writing of low carbon conductive material |
| US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
| US6616972B1 (en) * | 1999-02-24 | 2003-09-09 | Air Products And Chemicals, Inc. | Synthesis of metal oxide and oxynitride |
| US6140249A (en) * | 1999-08-27 | 2000-10-31 | Micron Technology, Inc. | Low dielectric constant dielectric films and process for making the same |
| US7326445B2 (en) * | 2000-11-29 | 2008-02-05 | Sii Nanotechnology Inc. | Method and apparatus for manufacturing ultra fine three-dimensional structure |
| AU2002232844A1 (en) | 2000-12-06 | 2002-06-18 | Angstron Systems, Inc. | System and method for modulated ion-induced atomic layer deposition (mii-ald) |
| US6492261B2 (en) | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
| US6838380B2 (en) | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
| WO2003012551A1 (en) | 2001-07-27 | 2003-02-13 | Fei Company | Electron beam processing |
| US6812152B2 (en) * | 2001-08-09 | 2004-11-02 | Comlase Ab | Method to obtain contamination free laser mirrors and passivation of these |
| KR100974778B1 (ko) | 2003-06-30 | 2010-08-06 | 삼성전자주식회사 | 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법 |
| US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
| US7824498B2 (en) * | 2004-02-24 | 2010-11-02 | Applied Materials, Inc. | Coating for reducing contamination of substrates during processing |
| EP1630849B1 (en) | 2004-08-27 | 2011-11-02 | Fei Company | Localized plasma processing |
| US7670956B2 (en) | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
| US7691653B2 (en) * | 2005-08-26 | 2010-04-06 | Sharp Kabushiki Kaisha | Nitride semiconductor laser element and method for manufacturing the same |
| US7288332B2 (en) * | 2005-10-06 | 2007-10-30 | Los Almos National Security, Llc | Conductive layer for biaxially oriented semiconductor film growth |
| US20070259111A1 (en) * | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
| JP5758577B2 (ja) | 2007-02-06 | 2015-08-05 | エフ・イ−・アイ・カンパニー | 高圧荷電粒子ビーム・システム |
| US8303833B2 (en) | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
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2009
- 2009-09-23 US US12/565,707 patent/US8617668B2/en active Active
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- 2010-09-06 JP JP2010198850A patent/JP5677700B2/ja not_active Expired - Fee Related
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| US8617668B2 (en) | 2013-12-31 |
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| EP2309020A1 (en) | 2011-04-13 |
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