JP5674806B2 - 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス - Google Patents

薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス Download PDF

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Publication number
JP5674806B2
JP5674806B2 JP2012540516A JP2012540516A JP5674806B2 JP 5674806 B2 JP5674806 B2 JP 5674806B2 JP 2012540516 A JP2012540516 A JP 2012540516A JP 2012540516 A JP2012540516 A JP 2012540516A JP 5674806 B2 JP5674806 B2 JP 5674806B2
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Prior art keywords
transparent conductive
type region
layer
iii nitride
nitride material
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Japanese (ja)
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JP2013511853A5 (enExample
JP2013511853A (ja
Inventor
フレデリック デュポン
フレデリック デュポン
ジョン イー エプラー
ジョン イー エプラー
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Led Device Packages (AREA)
JP2012540516A 2009-11-23 2010-11-12 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス Active JP5674806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/624,268 2009-11-23
US12/624,268 US8581229B2 (en) 2009-11-23 2009-11-23 III-V light emitting device with thin n-type region
PCT/IB2010/055147 WO2011061664A1 (en) 2009-11-23 2010-11-12 Iii-v light emitting device with thin n-type region

Publications (3)

Publication Number Publication Date
JP2013511853A JP2013511853A (ja) 2013-04-04
JP2013511853A5 JP2013511853A5 (enExample) 2013-12-26
JP5674806B2 true JP5674806B2 (ja) 2015-02-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012540516A Active JP5674806B2 (ja) 2009-11-23 2010-11-12 薄いｎ型領域を有するＩＩＩ−Ｖ族発光デバイス

Country Status (7)

Country Link
US (2) US8581229B2 (enExample)
EP (1) EP2504868B1 (enExample)
JP (1) JP5674806B2 (enExample)
KR (2) KR101905590B1 (enExample)
CN (1) CN102714255B (enExample)
TW (1) TWI523258B (enExample)
WO (1) WO2011061664A1 (enExample)

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DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
CN103748696B (zh) 2011-08-26 2018-06-22 亮锐控股有限公司 加工半导体结构的方法
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
CN104508815B (zh) 2012-07-31 2018-02-13 索泰克公司 使用激光剥离过程制造半导体结构的方法和相关的半导体结构
US9653647B2 (en) 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
EA201691900A1 (ru) * 2014-03-31 2017-05-31 Наньян Текнолоджикал Юнивёрсити Способ повторного использования подложек и несущих подложек
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法

Family Cites Families (28)

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JP3757544B2 (ja) * 1997-05-21 2006-03-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
US20040248335A1 (en) 2001-01-09 2004-12-09 Ivan Eliashevich Electrode structures for p-type nitride semiconductores and methods of making same
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
US7880182B2 (en) * 2002-07-15 2011-02-01 Epistar Corporation Light-emitting element array
JP4295669B2 (ja) * 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
JP4135567B2 (ja) * 2003-06-10 2008-08-20 松下電器産業株式会社 キャップ取り外し装置
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TWM255518U (en) * 2004-04-23 2005-01-11 Super Nova Optoelectronics Cor Vertical electrode structure of Gallium Nitride based LED
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4929924B2 (ja) * 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8704254B2 (en) * 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
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US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
US20090050905A1 (en) * 2007-08-20 2009-02-26 Abu-Ageel Nayef M Highly Efficient Light-Emitting Diode
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
KR101025948B1 (ko) * 2007-12-21 2011-03-30 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
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US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
US8089091B2 (en) * 2009-06-18 2012-01-03 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with a contact formed on a textured surface
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device

Also Published As

Publication number Publication date
KR101905590B1 (ko) 2018-10-10
US8878160B2 (en) 2014-11-04
KR20170098304A (ko) 2017-08-29
US8581229B2 (en) 2013-11-12
US20140034990A1 (en) 2014-02-06
CN102714255B (zh) 2015-10-21
KR20120094502A (ko) 2012-08-24
TWI523258B (zh) 2016-02-21
CN102714255A (zh) 2012-10-03
EP2504868A1 (en) 2012-10-03
WO2011061664A1 (en) 2011-05-26
TW201125161A (en) 2011-07-16
KR101762368B1 (ko) 2017-07-27
JP2013511853A (ja) 2013-04-04
US20110121332A1 (en) 2011-05-26
EP2504868B1 (en) 2018-05-16

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