CN102714255A - 具有薄n型区域的III-V族发光器件 - Google Patents
具有薄n型区域的III-V族发光器件 Download PDFInfo
- Publication number
- CN102714255A CN102714255A CN2010800621083A CN201080062108A CN102714255A CN 102714255 A CN102714255 A CN 102714255A CN 2010800621083 A CN2010800621083 A CN 2010800621083A CN 201080062108 A CN201080062108 A CN 201080062108A CN 102714255 A CN102714255 A CN 102714255A
- Authority
- CN
- China
- Prior art keywords
- layer
- iii group
- nitride material
- group nitride
- electrically conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 150000004767 nitrides Chemical class 0.000 claims description 45
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000284 extract Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 239000000758 substrate Substances 0.000 description 60
- 239000004020 conductor Substances 0.000 description 24
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/624,268 US8581229B2 (en) | 2009-11-23 | 2009-11-23 | III-V light emitting device with thin n-type region |
US12/624,268 | 2009-11-23 | ||
US12/624268 | 2009-11-23 | ||
PCT/IB2010/055147 WO2011061664A1 (en) | 2009-11-23 | 2010-11-12 | Iii-v light emitting device with thin n-type region |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102714255A true CN102714255A (zh) | 2012-10-03 |
CN102714255B CN102714255B (zh) | 2015-10-21 |
Family
ID=43502070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080062108.3A Active CN102714255B (zh) | 2009-11-23 | 2010-11-12 | 具有薄n型区域的III-V族发光器件 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8581229B2 (zh) |
EP (1) | EP2504868B1 (zh) |
JP (1) | JP5674806B2 (zh) |
KR (2) | KR101905590B1 (zh) |
CN (1) | CN102714255B (zh) |
TW (1) | TWI523258B (zh) |
WO (1) | WO2011061664A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106463451A (zh) * | 2014-03-31 | 2017-02-22 | 南洋理工大学 | 回收衬底和载体衬底的方法 |
CN111933765A (zh) * | 2020-07-03 | 2020-11-13 | 厦门士兰明镓化合物半导体有限公司 | 微型发光二极管及制作方法,微型led显示模块及制作方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011012298A1 (de) | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
KR20120099318A (ko) * | 2011-01-26 | 2012-09-10 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
CN103748696B (zh) | 2011-08-26 | 2018-06-22 | 亮锐控股有限公司 | 加工半导体结构的方法 |
JP2014027092A (ja) * | 2012-07-26 | 2014-02-06 | Sharp Corp | 半導体発光素子 |
CN104508815B (zh) * | 2012-07-31 | 2018-02-13 | 索泰克公司 | 使用激光剥离过程制造半导体结构的方法和相关的半导体结构 |
US9653647B2 (en) | 2013-06-14 | 2017-05-16 | Micron Technology, Inc. | Ultrathin solid state dies and methods of manufacturing the same |
DE102016124646A1 (de) | 2016-12-16 | 2018-06-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050224822A1 (en) * | 2003-07-04 | 2005-10-13 | Wen-Huang Liu | Light-emitting diode array having an adhesive layer |
US20050269582A1 (en) * | 2004-06-03 | 2005-12-08 | Lumileds Lighting, U.S., Llc | Luminescent ceramic for a light emitting device |
US20060006402A1 (en) * | 2004-07-12 | 2006-01-12 | Min-Hsun Hsieh | Light emitting diode having an omnidirectional reflector including a transparent conductive layer |
CN1934720A (zh) * | 2004-03-19 | 2007-03-21 | 松下电器产业株式会社 | 半导体发光元件及照明装置 |
US20080048202A1 (en) * | 2006-08-25 | 2008-02-28 | Sanken Electric Co., Ltd. | Semiconductor light emitting device, method of forming the same, and compound semiconductor device |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3757544B2 (ja) * | 1997-05-21 | 2006-03-22 | 昭和電工株式会社 | Iii族窒化物半導体発光素子 |
WO2002056394A1 (en) | 2001-01-09 | 2002-07-18 | Emcore Corporation | Electrode structures for p-type nitride semiconductores and mehtods of making same |
JP3896027B2 (ja) * | 2002-04-17 | 2007-03-22 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
US7880182B2 (en) * | 2002-07-15 | 2011-02-01 | Epistar Corporation | Light-emitting element array |
JP4295669B2 (ja) * | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
JP4135567B2 (ja) * | 2003-06-10 | 2008-08-20 | 松下電器産業株式会社 | キャップ取り外し装置 |
US20050173724A1 (en) * | 2004-02-11 | 2005-08-11 | Heng Liu | Group III-nitride based LED having a transparent current spreading layer |
TWM255518U (en) * | 2004-04-23 | 2005-01-11 | Super Nova Optoelectronics Cor | Vertical electrode structure of Gallium Nitride based LED |
US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
JP5232970B2 (ja) * | 2006-04-13 | 2013-07-10 | 豊田合成株式会社 | 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ |
JP2008053425A (ja) * | 2006-08-24 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP2008177525A (ja) * | 2006-12-20 | 2008-07-31 | Showa Denko Kk | Iii族窒化物半導体発光素子の製造方法、及びiii族窒化物半導体発光素子、並びにランプ |
US8704254B2 (en) * | 2006-12-22 | 2014-04-22 | Philips Lumileds Lighting Company, Llc | Light emitting device including a filter |
US7951693B2 (en) * | 2006-12-22 | 2011-05-31 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting devices grown on templates to reduce strain |
TWI331411B (en) * | 2006-12-29 | 2010-10-01 | Epistar Corp | High efficiency light-emitting diode and method for manufacturing the same |
US7791096B2 (en) * | 2007-06-08 | 2010-09-07 | Koninklijke Philips Electronics N.V. | Mount for a semiconductor light emitting device |
US20090050905A1 (en) * | 2007-08-20 | 2009-02-26 | Abu-Ageel Nayef M | Highly Efficient Light-Emitting Diode |
US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
KR101025948B1 (ko) * | 2007-12-21 | 2011-03-30 | 삼성엘이디 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
US9117944B2 (en) * | 2008-09-24 | 2015-08-25 | Koninklijke Philips N.V. | Semiconductor light emitting devices grown on composite substrates |
US8089091B2 (en) * | 2009-06-18 | 2012-01-03 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with a contact formed on a textured surface |
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
-
2009
- 2009-11-23 US US12/624,268 patent/US8581229B2/en active Active
-
2010
- 2010-11-12 KR KR1020177020575A patent/KR101905590B1/ko active IP Right Grant
- 2010-11-12 EP EP10788136.9A patent/EP2504868B1/en active Active
- 2010-11-12 WO PCT/IB2010/055147 patent/WO2011061664A1/en active Application Filing
- 2010-11-12 JP JP2012540516A patent/JP5674806B2/ja active Active
- 2010-11-12 KR KR1020127016290A patent/KR101762368B1/ko active IP Right Grant
- 2010-11-12 CN CN201080062108.3A patent/CN102714255B/zh active Active
- 2010-11-23 TW TW099140450A patent/TWI523258B/zh active
-
2013
- 2013-10-09 US US14/049,282 patent/US8878160B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050224822A1 (en) * | 2003-07-04 | 2005-10-13 | Wen-Huang Liu | Light-emitting diode array having an adhesive layer |
CN1934720A (zh) * | 2004-03-19 | 2007-03-21 | 松下电器产业株式会社 | 半导体发光元件及照明装置 |
US20050269582A1 (en) * | 2004-06-03 | 2005-12-08 | Lumileds Lighting, U.S., Llc | Luminescent ceramic for a light emitting device |
US20060006402A1 (en) * | 2004-07-12 | 2006-01-12 | Min-Hsun Hsieh | Light emitting diode having an omnidirectional reflector including a transparent conductive layer |
US20080048202A1 (en) * | 2006-08-25 | 2008-02-28 | Sanken Electric Co., Ltd. | Semiconductor light emitting device, method of forming the same, and compound semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106463451A (zh) * | 2014-03-31 | 2017-02-22 | 南洋理工大学 | 回收衬底和载体衬底的方法 |
CN111933765A (zh) * | 2020-07-03 | 2020-11-13 | 厦门士兰明镓化合物半导体有限公司 | 微型发光二极管及制作方法,微型led显示模块及制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US8581229B2 (en) | 2013-11-12 |
EP2504868A1 (en) | 2012-10-03 |
CN102714255B (zh) | 2015-10-21 |
EP2504868B1 (en) | 2018-05-16 |
TW201125161A (en) | 2011-07-16 |
TWI523258B (zh) | 2016-02-21 |
KR101905590B1 (ko) | 2018-10-10 |
WO2011061664A1 (en) | 2011-05-26 |
JP5674806B2 (ja) | 2015-02-25 |
KR20120094502A (ko) | 2012-08-24 |
US20110121332A1 (en) | 2011-05-26 |
US8878160B2 (en) | 2014-11-04 |
KR20170098304A (ko) | 2017-08-29 |
JP2013511853A (ja) | 2013-04-04 |
KR101762368B1 (ko) | 2017-07-27 |
US20140034990A1 (en) | 2014-02-06 |
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