CN102714255B - 具有薄n型区域的III-V族发光器件 - Google Patents

具有薄n型区域的III-V族发光器件 Download PDF

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Publication number
CN102714255B
CN102714255B CN201080062108.3A CN201080062108A CN102714255B CN 102714255 B CN102714255 B CN 102714255B CN 201080062108 A CN201080062108 A CN 201080062108A CN 102714255 B CN102714255 B CN 102714255B
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CN
China
Prior art keywords
light emitting
transparent conductive
type region
nitride material
ill
Prior art date
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CN201080062108.3A
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English (en)
Chinese (zh)
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CN102714255A (zh
Inventor
F.杜邦
J.E.埃普勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Lumileds LLC
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
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Publication of CN102714255A publication Critical patent/CN102714255A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201080062108.3A 2009-11-23 2010-11-12 具有薄n型区域的III-V族发光器件 Active CN102714255B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/624268 2009-11-23
US12/624,268 2009-11-23
US12/624,268 US8581229B2 (en) 2009-11-23 2009-11-23 III-V light emitting device with thin n-type region
PCT/IB2010/055147 WO2011061664A1 (en) 2009-11-23 2010-11-12 Iii-v light emitting device with thin n-type region

Publications (2)

Publication Number Publication Date
CN102714255A CN102714255A (zh) 2012-10-03
CN102714255B true CN102714255B (zh) 2015-10-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080062108.3A Active CN102714255B (zh) 2009-11-23 2010-11-12 具有薄n型区域的III-V族发光器件

Country Status (7)

Country Link
US (2) US8581229B2 (enExample)
EP (1) EP2504868B1 (enExample)
JP (1) JP5674806B2 (enExample)
KR (2) KR101905590B1 (enExample)
CN (1) CN102714255B (enExample)
TW (1) TWI523258B (enExample)
WO (1) WO2011061664A1 (enExample)

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KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
CN103748696B (zh) 2011-08-26 2018-06-22 亮锐控股有限公司 加工半导体结构的方法
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
CN104508815B (zh) 2012-07-31 2018-02-13 索泰克公司 使用激光剥离过程制造半导体结构的方法和相关的半导体结构
US9653647B2 (en) 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
EA201691900A1 (ru) * 2014-03-31 2017-05-31 Наньян Текнолоджикал Юнивёрсити Способ повторного использования подложек и несущих подложек
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法

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US20050269582A1 (en) * 2004-06-03 2005-12-08 Lumileds Lighting, U.S., Llc Luminescent ceramic for a light emitting device
US20060006402A1 (en) * 2004-07-12 2006-01-12 Min-Hsun Hsieh Light emitting diode having an omnidirectional reflector including a transparent conductive layer
CN1934720A (zh) * 2004-03-19 2007-03-21 松下电器产业株式会社 半导体发光元件及照明装置
US20080048202A1 (en) * 2006-08-25 2008-02-28 Sanken Electric Co., Ltd. Semiconductor light emitting device, method of forming the same, and compound semiconductor device

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US20040248335A1 (en) 2001-01-09 2004-12-09 Ivan Eliashevich Electrode structures for p-type nitride semiconductores and methods of making same
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US7880182B2 (en) * 2002-07-15 2011-02-01 Epistar Corporation Light-emitting element array
JP4295669B2 (ja) * 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
JP4135567B2 (ja) * 2003-06-10 2008-08-20 松下電器産業株式会社 キャップ取り外し装置
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
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US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
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US8089091B2 (en) * 2009-06-18 2012-01-03 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with a contact formed on a textured surface
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US20050224822A1 (en) * 2003-07-04 2005-10-13 Wen-Huang Liu Light-emitting diode array having an adhesive layer
CN1934720A (zh) * 2004-03-19 2007-03-21 松下电器产业株式会社 半导体发光元件及照明装置
US20050269582A1 (en) * 2004-06-03 2005-12-08 Lumileds Lighting, U.S., Llc Luminescent ceramic for a light emitting device
US20060006402A1 (en) * 2004-07-12 2006-01-12 Min-Hsun Hsieh Light emitting diode having an omnidirectional reflector including a transparent conductive layer
US20080048202A1 (en) * 2006-08-25 2008-02-28 Sanken Electric Co., Ltd. Semiconductor light emitting device, method of forming the same, and compound semiconductor device

Also Published As

Publication number Publication date
KR101905590B1 (ko) 2018-10-10
US8878160B2 (en) 2014-11-04
KR20170098304A (ko) 2017-08-29
US8581229B2 (en) 2013-11-12
US20140034990A1 (en) 2014-02-06
KR20120094502A (ko) 2012-08-24
TWI523258B (zh) 2016-02-21
CN102714255A (zh) 2012-10-03
EP2504868A1 (en) 2012-10-03
WO2011061664A1 (en) 2011-05-26
TW201125161A (en) 2011-07-16
KR101762368B1 (ko) 2017-07-27
JP5674806B2 (ja) 2015-02-25
JP2013511853A (ja) 2013-04-04
US20110121332A1 (en) 2011-05-26
EP2504868B1 (en) 2018-05-16

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Address after: Eindhoven, Netherlands

Co-patentee after: LUMILEDS LLC

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd.

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20200907

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

Co-patentee before: LUMILEDS LLC

Patentee before: KONINKLIJKE PHILIPS N.V.

TR01 Transfer of patent right