JP5662114B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP5662114B2 JP5662114B2 JP2010257036A JP2010257036A JP5662114B2 JP 5662114 B2 JP5662114 B2 JP 5662114B2 JP 2010257036 A JP2010257036 A JP 2010257036A JP 2010257036 A JP2010257036 A JP 2010257036A JP 5662114 B2 JP5662114 B2 JP 5662114B2
- Authority
- JP
- Japan
- Prior art keywords
- signal line
- line
- common
- semiconductor film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004973 liquid crystal related substance Substances 0.000 claims description 23
- 230000005684 electric field Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 67
- 239000010410 layer Substances 0.000 description 63
- 230000015556 catabolic process Effects 0.000 description 18
- 230000002457 bidirectional effect Effects 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000013256 coordination polymer Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 241000755729 Clivia Species 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/04—Display protection
Description
の通りである。
Claims (5)
- 絶縁基板と、
前記絶縁基板の上に第1の信号線と前記第1の信号線よりも前記表示領域の側に設けられた第2の信号線と前記第1の信号線よりも前記表示領域の外側に設けられた第3の信号線とが形成された第1の導電層と、
前記第1の導電層の上層に設けられた絶縁層と、
前記絶縁層の上層に設けられ、前記第1の信号線および第2の信号線と平面的に重なる半導体膜が形成された半導体層と、
を含み、
前記第2の信号線と前記第3の信号線とは、前記半導体膜よりも上層に設けられた導電層によって電気的に接続され、
前記第1の信号線のうち前記半導体膜に重なる部分と前記第2の信号線のうち前記半導体膜に重なる部分との距離は、前記第1の信号線と前記第2の信号線との間の距離のうち最小の距離より大きい、
ことを特徴とする表示装置。 - 前記第1の信号線のうち前記半導体膜に重なる部分と前記第2の信号線のうち前記半導体膜に重なる部分との距離は、前記第1の信号線と前記第2の信号線との間の距離のうち最小の距離より1.2倍以上大きい、
ことを特徴とする請求項1に記載の表示装置。 - 前記半導体膜の上面に接する導電膜が設けられる第2の導電層をさらに含む、
ことを特徴とする請求項1または2のいずれかに記載の表示装置。 - それぞれが画素電極と画素スイッチとを含む複数の画素回路をさらに含み、
前記第1の信号線は前記画素電極との間で発生する電界を液晶に印加するコモン電極に接続され、
前記第2の信号線は前記画素スイッチのゲート電極と接続される、
ことを特徴とする請求項1から3のいずれかに記載の表示装置。 - 前記第2の信号線は前記第1の信号線に直交する方向に複数設けられており、前記第2の信号線のそれぞれに対応する前記半導体膜は互いに離間して設けられている、
ことを特徴とする請求項1から4のいずれかに記載の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010257036A JP5662114B2 (ja) | 2010-11-17 | 2010-11-17 | 表示装置 |
US13/296,259 US9070335B2 (en) | 2010-11-17 | 2011-11-15 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010257036A JP5662114B2 (ja) | 2010-11-17 | 2010-11-17 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012108315A JP2012108315A (ja) | 2012-06-07 |
JP5662114B2 true JP5662114B2 (ja) | 2015-01-28 |
Family
ID=46047288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010257036A Active JP5662114B2 (ja) | 2010-11-17 | 2010-11-17 | 表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9070335B2 (ja) |
JP (1) | JP5662114B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101917853B1 (ko) * | 2012-07-02 | 2019-01-30 | 삼성디스플레이 주식회사 | 정전기 방지 표시 패널과 그 제조 방법, 및 정전기 방지 표시 패널을 포함하는 표시 장치 |
JP5997958B2 (ja) * | 2012-07-23 | 2016-09-28 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
JP6107356B2 (ja) * | 2013-04-16 | 2017-04-05 | セイコーエプソン株式会社 | 静電保護回路、電気光学装置、及び電子機器 |
CN104461154B (zh) * | 2014-12-23 | 2017-08-29 | 京东方科技集团股份有限公司 | 触控显示基板、触控显示面板和触控显示装置 |
TWI553839B (zh) * | 2015-04-15 | 2016-10-11 | 群創光電股份有限公司 | 顯示面板 |
CN105093762B (zh) * | 2015-09-28 | 2019-01-11 | 京东方科技集团股份有限公司 | 阵列基板、制造方法以及相应的显示面板和电子装置 |
KR102409881B1 (ko) * | 2016-03-21 | 2022-06-17 | 삼성디스플레이 주식회사 | 표시 장치 및 쇼트 검사 방법 |
KR20180066937A (ko) * | 2016-12-09 | 2018-06-20 | 삼성디스플레이 주식회사 | 표시 장치 |
CN107290908B (zh) * | 2017-06-23 | 2020-05-29 | 武汉华星光电技术有限公司 | 静电保护电路及液晶显示面板 |
US11366366B2 (en) * | 2019-02-13 | 2022-06-21 | Sharp Kabushiki Kaisha | Active matrix substrate and photoelectric imaging panel with the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69532724T2 (de) | 1995-08-07 | 2005-03-17 | Hitachi, Ltd. | Gegen statische elektrizität unempfindliche flüssigkristall-anzeigevorrichtung mit aktiver matrix |
JP3279969B2 (ja) * | 1997-09-25 | 2002-04-30 | 株式会社アドバンスト・ディスプレイ | Tftアレイ基板およびその製造方法並びに液晶表示装置 |
JP2000267137A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | 液晶表示装置 |
JP2003043523A (ja) * | 2001-08-03 | 2003-02-13 | Casio Comput Co Ltd | 薄膜トランジスタパネル |
JP4067090B2 (ja) * | 2002-10-03 | 2008-03-26 | シャープ株式会社 | Tft基板およびその製造方法 |
KR100488156B1 (ko) | 2002-12-31 | 2005-05-06 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
JP2004246202A (ja) | 2003-02-14 | 2004-09-02 | Koninkl Philips Electronics Nv | 静電放電保護回路を有する電子装置 |
JP2004317685A (ja) * | 2003-04-15 | 2004-11-11 | Quanta Display Japan Inc | 液晶表示装置とその製造方法 |
JP2007079357A (ja) * | 2005-09-16 | 2007-03-29 | Sanyo Epson Imaging Devices Corp | 表示装置 |
JP4940615B2 (ja) * | 2005-09-30 | 2012-05-30 | カシオ計算機株式会社 | 液晶表示装置 |
JP2008053517A (ja) * | 2006-08-25 | 2008-03-06 | Sharp Corp | アレイ基板の製造方法及びアレイ基板 |
JP5306784B2 (ja) * | 2008-11-18 | 2013-10-02 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2010
- 2010-11-17 JP JP2010257036A patent/JP5662114B2/ja active Active
-
2011
- 2011-11-15 US US13/296,259 patent/US9070335B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9070335B2 (en) | 2015-06-30 |
US20120119979A1 (en) | 2012-05-17 |
JP2012108315A (ja) | 2012-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5662114B2 (ja) | 表示装置 | |
US6980264B2 (en) | Repair method for defects in data lines and flat panel display incorporating the same | |
JP4477552B2 (ja) | 画素領域外郭部の光漏れを防止するcot構造液晶表示装置及びその製造方法 | |
US8462308B2 (en) | Array substrate having connection wirings | |
US9985053B2 (en) | Array substrate | |
JP4385993B2 (ja) | 液晶表示装置及びその製造方法 | |
JP5392670B2 (ja) | 液晶表示装置及びその製造方法 | |
JP6621284B2 (ja) | 表示装置 | |
KR102007833B1 (ko) | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 | |
WO2015033840A1 (ja) | アクティブマトリクス基板及び表示装置 | |
US9778526B2 (en) | Display panel and pixel array thereof | |
US7903220B2 (en) | Liquid crystal display device and electronic apparatus | |
JP2008180928A (ja) | 液晶表示装置及びその製造方法 | |
JP2016057344A (ja) | 表示装置 | |
US10254612B2 (en) | Display panel and method of fabricating the same | |
JP2009186737A (ja) | アレイ基板および表示装置 | |
JP2017219669A (ja) | 液晶表示パネルおよび当該液晶表示パネルを備えた液晶表示装置 | |
US10312374B2 (en) | Circuit board and display device | |
JP2008046625A (ja) | 液晶表示装置 | |
JP2017146450A (ja) | 表示装置 | |
JP6503721B2 (ja) | アレイ基板およびそれを用いた表示装置 | |
JP2009104108A (ja) | 液晶表示装置及び電子機器 | |
JP2008064961A (ja) | 配線構造、及び表示装置 | |
US20160124275A1 (en) | Liquid crystal display having improved transmittance | |
JP4293867B2 (ja) | 画素の大型化に対応したips液晶ディスプレイ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130314 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130820 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130910 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141111 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5662114 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |