JP5659416B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP5659416B2
JP5659416B2 JP2010280532A JP2010280532A JP5659416B2 JP 5659416 B2 JP5659416 B2 JP 5659416B2 JP 2010280532 A JP2010280532 A JP 2010280532A JP 2010280532 A JP2010280532 A JP 2010280532A JP 5659416 B2 JP5659416 B2 JP 5659416B2
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layer
silicon
forming
etching
silicon layer
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JP2010280532A
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Japanese (ja)
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JP2011166119A5 (https=
JP2011166119A (ja
Inventor
会 晟 鄭
会 晟 鄭
東 石 申
東 石 申
東 赫 金
東 赫 金
晶 植 許
晶 植 許
明 宣 金
明 宣 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP2010280532A 2010-02-12 2010-12-16 半導体素子の製造方法 Active JP5659416B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0013123 2010-02-12
KR1020100013123A KR101576529B1 (ko) 2010-02-12 2010-02-12 습식 식각을 이용한 실리콘 파셋트를 갖는 반도체 장치 및 제조방법

Publications (3)

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JP2011166119A JP2011166119A (ja) 2011-08-25
JP2011166119A5 JP2011166119A5 (https=) 2013-11-28
JP5659416B2 true JP5659416B2 (ja) 2015-01-28

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JP2010280532A Active JP5659416B2 (ja) 2010-02-12 2010-12-16 半導体素子の製造方法

Country Status (5)

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US (1) US8207040B2 (https=)
JP (1) JP5659416B2 (https=)
KR (1) KR101576529B1 (https=)
CN (1) CN102157380B (https=)
TW (1) TWI505349B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487015A (zh) * 2010-12-03 2012-06-06 中国科学院微电子研究所 一种半导体结构及其制造方法
US8383485B2 (en) * 2011-07-13 2013-02-26 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial process for forming semiconductor devices
KR20140038826A (ko) 2012-09-21 2014-03-31 삼성전자주식회사 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
CN104217956B (zh) * 2013-06-05 2017-05-17 中芯国际集成电路制造(上海)有限公司 Pmos晶体管及其制作方法
US9209175B2 (en) 2013-07-17 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices having epitaxy regions with reduced facets
US9202916B2 (en) * 2013-12-27 2015-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure
US9613974B2 (en) 2015-03-13 2017-04-04 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
CN106558499B (zh) * 2015-09-30 2019-09-27 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
CN106887408B (zh) 2015-12-15 2019-12-17 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US10319832B2 (en) 2017-04-28 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
KR102365109B1 (ko) 2017-08-22 2022-02-18 삼성전자주식회사 집적회로 장치

Family Cites Families (12)

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JP2964925B2 (ja) 1994-10-12 1999-10-18 日本電気株式会社 相補型ｍｉｓ型ｆｅｔの製造方法
TW497120B (en) * 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
TWI225715B (en) * 2001-09-11 2004-12-21 Asia Pacific Microsystems Inc Manufacturing method of film bulk acoustic device
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7485941B2 (en) * 2004-12-15 2009-02-03 Tower Semiconductor Ltd. Cobalt silicide schottky diode on isolated well
KR100882930B1 (ko) * 2004-12-17 2009-02-10 삼성전자주식회사 소오스 및 드레인 영역들을 갖는 씨모스 반도체 소자들 및 그 제조방법들
JP4369359B2 (ja) * 2004-12-28 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
US7629273B2 (en) * 2006-09-19 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for modulating stresses of a contact etch stop layer
US20090166625A1 (en) 2007-12-28 2009-07-02 United Microelectronics Corp. Mos device structure

Also Published As

Publication number Publication date
KR101576529B1 (ko) 2015-12-11
CN102157380B (zh) 2015-02-04
CN102157380A (zh) 2011-08-17
TW201135830A (en) 2011-10-16
KR20110093217A (ko) 2011-08-18
US20110201166A1 (en) 2011-08-18
TWI505349B (zh) 2015-10-21
JP2011166119A (ja) 2011-08-25
US8207040B2 (en) 2012-06-26

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