JP5654753B2 - スペクトルを使用した研磨終了点の決定 - Google Patents
スペクトルを使用した研磨終了点の決定 Download PDFInfo
- Publication number
- JP5654753B2 JP5654753B2 JP2009551052A JP2009551052A JP5654753B2 JP 5654753 B2 JP5654753 B2 JP 5654753B2 JP 2009551052 A JP2009551052 A JP 2009551052A JP 2009551052 A JP2009551052 A JP 2009551052A JP 5654753 B2 JP5654753 B2 JP 5654753B2
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- JP
- Japan
- Prior art keywords
- spectrum
- spectra
- squares
- rotation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
- G16Z99/00—Subject matter not provided for in other main groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89148707P | 2007-02-23 | 2007-02-23 | |
| US60/891,487 | 2007-02-23 | ||
| PCT/US2008/054807 WO2008103964A2 (en) | 2007-02-23 | 2008-02-22 | Using spectra to determine polishing endpoints |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013127106A Division JP5774059B2 (ja) | 2007-02-23 | 2013-06-18 | スペクトルを使用した研磨終了点の決定 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010519771A JP2010519771A (ja) | 2010-06-03 |
| JP2010519771A5 JP2010519771A5 (enExample) | 2014-05-29 |
| JP5654753B2 true JP5654753B2 (ja) | 2015-01-14 |
Family
ID=39710785
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009551052A Active JP5654753B2 (ja) | 2007-02-23 | 2008-02-22 | スペクトルを使用した研磨終了点の決定 |
| JP2013127106A Active JP5774059B2 (ja) | 2007-02-23 | 2013-06-18 | スペクトルを使用した研磨終了点の決定 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013127106A Active JP5774059B2 (ja) | 2007-02-23 | 2013-06-18 | スペクトルを使用した研磨終了点の決定 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8569174B2 (enExample) |
| EP (1) | EP2125291A4 (enExample) |
| JP (2) | JP5654753B2 (enExample) |
| KR (3) | KR101504508B1 (enExample) |
| TW (1) | TWI445098B (enExample) |
| WO (1) | WO2008103964A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
| US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| KR101504508B1 (ko) | 2007-02-23 | 2015-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
| US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
| US8369978B2 (en) * | 2008-09-04 | 2013-02-05 | Applied Materials | Adjusting polishing rates by using spectrographic monitoring of a substrate during processing |
| WO2010062497A2 (en) * | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US8628376B2 (en) * | 2008-11-07 | 2014-01-14 | Applied Materials, Inc. | In-line wafer thickness sensing |
| US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
| US8039397B2 (en) * | 2008-11-26 | 2011-10-18 | Applied Materials, Inc. | Using optical metrology for within wafer feed forward process control |
| JP5968783B2 (ja) * | 2009-11-03 | 2016-08-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法 |
| JP5728239B2 (ja) * | 2010-03-02 | 2015-06-03 | 株式会社荏原製作所 | 研磨監視方法、研磨方法、研磨監視装置、および研磨装置 |
| US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
| TWI496661B (zh) * | 2010-04-28 | 2015-08-21 | 應用材料股份有限公司 | 用於光學監測之參考光譜的自動產生 |
| CN106252220B (zh) * | 2010-05-05 | 2019-06-11 | 应用材料公司 | 用于终点检测的动态或适应性追踪光谱特征 |
| US8190285B2 (en) * | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
| US8666665B2 (en) * | 2010-06-07 | 2014-03-04 | Applied Materials, Inc. | Automatic initiation of reference spectra library generation for optical monitoring |
| JP2012019114A (ja) * | 2010-07-08 | 2012-01-26 | Tokyo Seimitsu Co Ltd | 研磨終点検出装置、及び研磨終点検出方法 |
| JP5612945B2 (ja) | 2010-07-23 | 2014-10-22 | 株式会社荏原製作所 | 基板の研磨の進捗を監視する方法および研磨装置 |
| TWI521625B (zh) * | 2010-07-30 | 2016-02-11 | 應用材料股份有限公司 | 使用光譜監測來偵測層級清除 |
| US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
| WO2012054263A2 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Multiple matching reference spectra for in-situ optical monitoring |
| US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
| US8755928B2 (en) * | 2011-04-27 | 2014-06-17 | Applied Materials, Inc. | Automatic selection of reference spectra library |
| US8942842B2 (en) | 2011-04-28 | 2015-01-27 | Applied Materials, Inc. | Varying optical coefficients to generate spectra for polishing control |
| WO2013133974A1 (en) | 2012-03-08 | 2013-09-12 | Applied Materials, Inc. | Fitting of optical model to measured spectrum |
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| US9221147B2 (en) * | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
| US20140141696A1 (en) * | 2012-11-21 | 2014-05-22 | Applied Materials, Inc. | Polishing System with In-Sequence Sensor |
| US20140242881A1 (en) * | 2013-02-27 | 2014-08-28 | Applied Materials, Inc. | Feed forward parameter values for use in theoretically generating spectra |
| JP6195754B2 (ja) * | 2013-07-19 | 2017-09-13 | 株式会社荏原製作所 | 研磨装置および研磨状態監視方法 |
| TWI635929B (zh) | 2013-07-11 | 2018-09-21 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨狀態監視方法 |
| US10502694B2 (en) | 2013-08-06 | 2019-12-10 | Kla-Tencor Corporation | Methods and apparatus for patterned wafer characterization |
| WO2015163164A1 (ja) * | 2014-04-22 | 2015-10-29 | 株式会社 荏原製作所 | 研磨方法および研磨装置 |
| US20160013085A1 (en) * | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | In-Situ Acoustic Monitoring of Chemical Mechanical Polishing |
| US20160033958A1 (en) * | 2014-08-01 | 2016-02-04 | Globalfoundries Inc. | Endpoint determination using individually measured target spectra |
| TWI789385B (zh) * | 2017-04-21 | 2023-01-11 | 美商應用材料股份有限公司 | 使用神經網路來監測的拋光裝置 |
| JP6902452B2 (ja) * | 2017-10-19 | 2021-07-14 | 株式会社荏原製作所 | 研磨装置 |
| TWI825075B (zh) | 2018-04-03 | 2023-12-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
| CN111886686B (zh) | 2018-09-26 | 2024-08-02 | 应用材料公司 | 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿 |
| JP7086835B2 (ja) * | 2018-12-28 | 2022-06-20 | 株式会社荏原製作所 | 研磨レシピ決定装置 |
| CN110181984A (zh) * | 2019-06-03 | 2019-08-30 | 泉州龙捷园林古建工程有限公司 | 一种于板材上制作图文的方法 |
| US11282755B2 (en) * | 2019-08-27 | 2022-03-22 | Applied Materials, Inc. | Asymmetry correction via oriented wafer loading |
| CN115038549B (zh) | 2020-06-24 | 2024-03-12 | 应用材料公司 | 使用研磨垫磨损补偿的基板层厚度确定 |
| WO2023249678A1 (en) * | 2022-06-22 | 2023-12-28 | Applied Materials, Inc. | Window logic for control of polishing process |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7004A (en) * | 1850-01-08 | Connecting ctjttees to shafts of boeing instetjments | ||
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5747380A (en) | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
| US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
| US6271047B1 (en) | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
| US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| TW398036B (en) | 1998-08-18 | 2000-07-11 | Promos Technologies Inc | Method of monitoring of chemical mechanical polishing end point and uniformity |
| IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
| US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
| WO2000026613A1 (en) | 1998-11-02 | 2000-05-11 | Applied Materials, Inc. | Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate |
| US6908374B2 (en) * | 1998-12-01 | 2005-06-21 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
| JP2000183001A (ja) | 1998-12-10 | 2000-06-30 | Okamoto Machine Tool Works Ltd | ウエハの研磨終点検出方法およびそれに用いる化学機械研磨装置 |
| US6204922B1 (en) | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
| US6172756B1 (en) | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
| US6184985B1 (en) | 1998-12-11 | 2001-02-06 | Filmetrics, Inc. | Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources |
| US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
| JP2000310512A (ja) | 1999-04-28 | 2000-11-07 | Hitachi Ltd | 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置 |
| JP3327289B2 (ja) | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
| US6358327B1 (en) | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
| US6340602B1 (en) * | 1999-12-10 | 2002-01-22 | Sensys Instruments | Method of measuring meso-scale structures on wafers |
| US6399501B2 (en) * | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
| JP3259225B2 (ja) | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
| JP2001287159A (ja) | 2000-04-05 | 2001-10-16 | Nikon Corp | 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法 |
| AU2001279247A1 (en) * | 2000-08-10 | 2002-02-25 | Sensys Instruments Corporation | Database interpolation method for optical measurement of diffractive microstructures |
| WO2002065545A2 (en) * | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
| US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
| JP2002359217A (ja) * | 2001-05-31 | 2002-12-13 | Omron Corp | 研磨終点検出方法およびその装置 |
| US6762838B2 (en) * | 2001-07-02 | 2004-07-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for production line screening |
| JP3932836B2 (ja) | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
| US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
| US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
| US6898596B2 (en) * | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
| US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
| JP4660091B2 (ja) * | 2001-12-31 | 2011-03-30 | 東京エレクトロン株式会社 | 材料処理システムおよび材料処理システムを特徴づける方法 |
| US6942546B2 (en) | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
| US6813034B2 (en) * | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
| US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
| US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
| JP4542324B2 (ja) | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
| US6885467B2 (en) * | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
| US8257546B2 (en) | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
| WO2004097723A1 (en) | 2003-04-29 | 2004-11-11 | Anoto Ip Lic Hb | Methods, apparatus, computer program and storage medium for position decoding |
| US7097537B1 (en) * | 2003-08-18 | 2006-08-29 | Applied Materials, Inc. | Determination of position of sensor measurements during polishing |
| JP4464642B2 (ja) | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
| JP2005159203A (ja) | 2003-11-28 | 2005-06-16 | Hitachi Ltd | 膜厚計測方法及びその装置、研磨レート算出方法並びにcmp加工方法及びその装置 |
| US7255771B2 (en) * | 2004-03-26 | 2007-08-14 | Applied Materials, Inc. | Multiple zone carrier head with flexible membrane |
| US7120553B2 (en) | 2004-07-22 | 2006-10-10 | Applied Materials, Inc. | Iso-reflectance wavelengths |
| US7406394B2 (en) | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
| KR101324644B1 (ko) | 2005-08-22 | 2013-11-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
| US7226339B2 (en) * | 2005-08-22 | 2007-06-05 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| KR101398570B1 (ko) * | 2005-08-22 | 2014-05-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
| KR101504508B1 (ko) | 2007-02-23 | 2015-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
-
2008
- 2008-02-22 KR KR1020097019664A patent/KR101504508B1/ko active Active
- 2008-02-22 TW TW97106349A patent/TWI445098B/zh active
- 2008-02-22 KR KR1020157033828A patent/KR101643992B1/ko active Active
- 2008-02-22 US US12/036,174 patent/US8569174B2/en active Active
- 2008-02-22 EP EP08730580.1A patent/EP2125291A4/en not_active Withdrawn
- 2008-02-22 KR KR1020147032982A patent/KR101678082B1/ko active Active
- 2008-02-22 JP JP2009551052A patent/JP5654753B2/ja active Active
- 2008-02-22 WO PCT/US2008/054807 patent/WO2008103964A2/en not_active Ceased
-
2013
- 2013-06-18 JP JP2013127106A patent/JP5774059B2/ja active Active
- 2013-09-30 US US14/041,113 patent/US9142466B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2125291A2 (en) | 2009-12-02 |
| TW200849416A (en) | 2008-12-16 |
| US20080206993A1 (en) | 2008-08-28 |
| KR101678082B1 (ko) | 2016-11-21 |
| WO2008103964A2 (en) | 2008-08-28 |
| US8569174B2 (en) | 2013-10-29 |
| KR20090112765A (ko) | 2009-10-28 |
| EP2125291A4 (en) | 2013-08-07 |
| JP5774059B2 (ja) | 2015-09-02 |
| WO2008103964A3 (en) | 2008-11-27 |
| JP2013232660A (ja) | 2013-11-14 |
| JP2010519771A (ja) | 2010-06-03 |
| KR20140147146A (ko) | 2014-12-29 |
| KR20150140400A (ko) | 2015-12-15 |
| TWI445098B (zh) | 2014-07-11 |
| US20140045282A1 (en) | 2014-02-13 |
| KR101504508B1 (ko) | 2015-03-20 |
| US9142466B2 (en) | 2015-09-22 |
| KR101643992B1 (ko) | 2016-07-29 |
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