JP5651824B2 - ミリ波帯無線送受信装置 - Google Patents
ミリ波帯無線送受信装置 Download PDFInfo
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- JP5651824B2 JP5651824B2 JP2012557732A JP2012557732A JP5651824B2 JP 5651824 B2 JP5651824 B2 JP 5651824B2 JP 2012557732 A JP2012557732 A JP 2012557732A JP 2012557732 A JP2012557732 A JP 2012557732A JP 5651824 B2 JP5651824 B2 JP 5651824B2
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- 230000005540 biological transmission Effects 0.000 claims description 116
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 11
- 238000004891 communication Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/08—Modifications for reducing interference; Modifications for reducing effects due to line faults ; Receiver end arrangements for detecting or overcoming line faults
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/24—Automatic control of frequency or phase; Synchronisation using a reference signal directly applied to the generator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Transceivers (AREA)
- Transmitters (AREA)
- Superheterodyne Receivers (AREA)
Description
11 送信用局部発振器
12 送信用ミキサ
13 送信用アンプ
14 キャリブレーション部
15 送信用アンテナ
20 受信部
21 受信用アンプ
22 受信用局部発振器
23 受信用ミキサ
24 受信用アンテナ
25 キャリブレーション部
30 基準周波数信号発生器
40 スイッチ
50 回路基板
51 送信用直交発振器
52,53 送信用ミキサ
61 受信用直交発振器
62,63 受信用ミキサ
Claims (4)
- ミリ波帯の搬送波を用いるミリ波帯無線送受信装置であって、該ミリ波帯無線送受信装置は、
注入同期型発振器からなるI/Q結合型の送信用直交発振器である送信用局部発振器と、該送信用局部発振器からのI成分とQ成分の2つの信号を混合するI成分用とQ成分用の2つの送信用ミキサと、を有し、送信用直交発振器から2つの送信用ミキサまでの配線長が、I/Qミスマッチを軽減するためにそれぞれ等しく対称に配置される、直交するI成分とQ成分による変調信号を送信する送信部と、
注入同期型発振器からなるI/Q結合型の受信用直交発振器である受信用局部発振器と、該受信用局部発振器からのI成分とQ成分の2つの信号を混合し受信ベースバンド信号を出力するI成分用とQ成分用の2つの受信用ミキサと、を有し、受信用直交発振器から2つの受信用ミキサまでの配線長が、I/Qミスマッチを軽減するためにそれぞれ等しく対称に配置される、直交するI成分とQ成分による変調信号を受信する受信部と、
送信用局部発振器及び受信用局部発振器に基準周波数信号を注入する基準周波数信号発生器と、
を具備することを特徴とするミリ波帯無線送受信装置。 - ミリ波帯の搬送波を用いるミリ波帯無線送受信装置であって、該ミリ波帯無線送受信装置は、
注入同期型発振器からなる送信用局部発振器と、該送信用局部発振器からの信号と送信ベースバンド信号とを混合する送信用ミキサと、送信用ミキサから送信用アンテナへの信号を増幅する送信用アンプと、を有する送信部と、
受信用アンテナからの信号を増幅する受信用アンプと、注入同期型発振器からなる受信用局部発振器と、該受信用局部発振器からの信号と受信用アンプからの信号とを混合し受信ベースバンド信号を出力する受信用ミキサと、を有する受信部と、
送信用局部発振器及び受信用局部発振器に基準周波数信号を注入する基準周波数信号発生器と、
を具備し、
さらに、送信用局部発振器と受信用局部発振器とがそれぞれ基準周波数信号発生器からの基準周波数信号にロックするように、送信用局部発振器及び受信用局部発振器を個々に調整するためのキャリブレーション部を具備することを特徴とするミリ波帯無線送受信装置。 - 請求項1又は請求項2に記載のミリ波帯無線送受信装置において、前記基準周波数信号発生器は、PLLを用いたものであることを特徴とするミリ波帯無線送受信装置。
- 請求項1乃至請求項3の何れかに記載のミリ波帯無線送受信装置において、前記送信部及び受信部は、ダイレクトコンバージョン方式、スーパーヘテロダイン方式、又はスライディングIF方式の何れかであることを特徴とするミリ波帯無線送受信装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/053402 WO2012111131A1 (ja) | 2011-02-17 | 2011-02-17 | ミリ波帯無線送受信装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012111131A1 JPWO2012111131A1 (ja) | 2014-07-03 |
JP5651824B2 true JP5651824B2 (ja) | 2015-01-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012557732A Active JP5651824B2 (ja) | 2011-02-17 | 2011-02-17 | ミリ波帯無線送受信装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8971389B2 (ja) |
EP (1) | EP2677667A4 (ja) |
JP (1) | JP5651824B2 (ja) |
KR (1) | KR101651496B1 (ja) |
WO (1) | WO2012111131A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US9603555B2 (en) | 2010-05-17 | 2017-03-28 | Industrial Technology Research Institute | Motion/vibration detection system and method with self-injection locking |
US9375153B2 (en) * | 2010-05-17 | 2016-06-28 | Industrial Technology Research Institute | Motion/vibration sensor |
WO2012111131A1 (ja) | 2011-02-17 | 2012-08-23 | 国立大学法人東京工業大学 | ミリ波帯無線送受信装置 |
US9331632B2 (en) * | 2012-04-18 | 2016-05-03 | Qualcomm Incorporated | Integrated circuit for mixing millimeter-wavelength signals |
US9106234B2 (en) * | 2013-03-15 | 2015-08-11 | Qualcomm Incorporated | Programmable frequency divider for local oscillator generation |
JP6171758B2 (ja) * | 2013-09-10 | 2017-08-02 | 富士通株式会社 | 高周波信号発生回路、送信装置、受信装置及び送受信装置 |
US9270289B2 (en) * | 2014-02-13 | 2016-02-23 | Fujitsu Limited | Monolithic signal generation for injection locking |
US9584231B2 (en) * | 2014-10-30 | 2017-02-28 | Samsung Electronics Co., Ltd. | Integrated two dimensional active antenna array communication system |
KR101704688B1 (ko) * | 2014-12-02 | 2017-02-10 | 전자부품연구원 | 밀리미터파 대역 무선 송수신 장치 |
KR101704689B1 (ko) * | 2014-12-02 | 2017-02-10 | 전자부품연구원 | 밀리미터파 모듈레이션 장치 |
CN106501742B (zh) * | 2016-09-28 | 2019-03-08 | 北京无线电计量测试研究所 | 一种基于光电融合技术的微波毫米波相位噪声标准装置 |
WO2018135853A1 (ko) * | 2017-01-20 | 2018-07-26 | 엘지전자 주식회사 | 출력 신호를 전송하는 방법 및 그 방법을 수행하는 분산형 안테나 시스템 |
KR102010434B1 (ko) | 2017-12-29 | 2019-08-14 | 성균관대학교산학협력단 | 주입 동기 주파수 체배기 및 그의 주파수 체배 방법 |
US20190356464A1 (en) * | 2018-05-21 | 2019-11-21 | Phazr, Inc. | Methods and Systems for Communication Using Dual Connectivity Wireless Transceiver |
SG11202104797RA (en) * | 2018-10-12 | 2021-06-29 | Skyworks Solutions Inc | Systems and methods for integration of injection-locked oscillators into transceiver arrays |
WO2021191970A1 (ja) * | 2020-03-23 | 2021-09-30 | 三菱電機株式会社 | 送受信機 |
TWI723824B (zh) * | 2020-03-30 | 2021-04-01 | 國立高雄科技大學 | 無線鎖頻迴路之生理感測雷達 |
TWI741875B (zh) * | 2020-11-12 | 2021-10-01 | 國立中山大學 | 頻率位移式自我注入鎖定雷達 |
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-
2011
- 2011-02-17 WO PCT/JP2011/053402 patent/WO2012111131A1/ja active Application Filing
- 2011-02-17 EP EP11858730.2A patent/EP2677667A4/en not_active Withdrawn
- 2011-02-17 KR KR1020137024814A patent/KR101651496B1/ko active IP Right Grant
- 2011-02-17 US US13/985,657 patent/US8971389B2/en active Active
- 2011-02-17 JP JP2012557732A patent/JP5651824B2/ja active Active
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JP2000111636A (ja) * | 1998-09-30 | 2000-04-21 | Denso Corp | レーダ装置の高周波回路及びレーダ装置 |
JP2005341332A (ja) * | 2004-05-28 | 2005-12-08 | Fujitsu Ltd | 発振器および半導体装置 |
JP2006094333A (ja) * | 2004-09-27 | 2006-04-06 | Mitsubishi Electric Corp | 2周波発振器およびレーダ装置 |
JP2008245078A (ja) * | 2007-03-28 | 2008-10-09 | Nec Electronics Corp | 電圧制御発振器 |
JP2010273283A (ja) * | 2009-05-25 | 2010-12-02 | Mitsubishi Electric Corp | 送受信装置 |
Also Published As
Publication number | Publication date |
---|---|
KR101651496B1 (ko) | 2016-08-26 |
WO2012111131A1 (ja) | 2012-08-23 |
KR20140006043A (ko) | 2014-01-15 |
EP2677667A4 (en) | 2017-05-10 |
EP2677667A1 (en) | 2013-12-25 |
US8971389B2 (en) | 2015-03-03 |
JPWO2012111131A1 (ja) | 2014-07-03 |
US20140016731A1 (en) | 2014-01-16 |
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