JP2008245078A - 電圧制御発振器 - Google Patents
電圧制御発振器 Download PDFInfo
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- JP2008245078A JP2008245078A JP2007085080A JP2007085080A JP2008245078A JP 2008245078 A JP2008245078 A JP 2008245078A JP 2007085080 A JP2007085080 A JP 2007085080A JP 2007085080 A JP2007085080 A JP 2007085080A JP 2008245078 A JP2008245078 A JP 2008245078A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1271—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the frequency being controlled by a control current, i.e. current controlled oscillators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0038—Circuit elements of oscillators including a current mirror
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0066—Amplitude or AM detection
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
【解決手段】電圧制御発振器は、電圧制御発振部へ動作電流を供給する可変電流生成回路と、インダクタと可変容量素子とで構成される共振回路を有し、可変電流生成回路の生成する電流に基づいた振幅の出力信号を出力する電圧制御発振部と、出力信号が入力され、可変電流生成回路の出力する電流の変化量に対する出力信号の振幅変化に基づいて電流設定信号を生成し、可変電流生成回路に供給する第1の最適化回路とを有する
【選択図】 図1
Description
1. 電流が増加することによって増幅部を構成するトランジスタのゲートに耐圧以上の電圧がかかってしまわないようにする。
2. 過剰電流によって、出力波形に2次歪みなどが生じ、位相ノイズの特性が悪化しないようにする。
出力信号VP0、VP90、VP180、VP270は、スイッチSW1を介してピーク電圧検出回路31へと入力される。ピーク電圧値検出回路31は、検出したピーク電圧値に対応するピーク電圧値信号を出力する。
第1の判定回路32によってピーク電圧値信号の示す電圧値と耐圧基準の基準値との比較が行なわれる。第1の判定回路32は、ピーク電圧値が基準値以下であれば次のステップへと進み、ピーク電圧値が基準値以上となれば設定電流値を、前々回の設定値に戻す信号を電流設定値保存回路に出力した後に、電流値の設定を終了する。
初期状態においては、最小電流に設定されているため、後述するステップS5において、少なくとも1回の電流の増加が行われる。ステップS3では、この初期状態のピーク電圧V0と、1回の電流増加を行った後のピーク電圧値V1の比が計算される。1回の電流増加分を一定の値としておけば、初回の電流増加に対するピーク電圧値の上昇分を基準値として用いることが可能である。そのため、第1の判定回路32は、下記のステップ4における判断の基準値G0としてV0とV1の比を記憶する。
ステップ4において、前回の電流増加後のピーク電圧値Vn−1(n−1回の電流増加を行なった後のピーク電圧値)Vn−1と、最新のピーク電圧値(n回の電流増加を行なった後のピーク電圧値)Vnの比Gnを計算する。ここで計算されたGnは、ステップ3で記憶された基準値G0と比較される。ここで、基準値G0>Gnとなっていた場合は電流値の設定を終了し、G0≦Gnであれば、ステップS5へと進む。
第1の判定回路32は、所定量の電流値を増加させる信号を電流設定値保存回路33へと出力する。この所定量の電流値とは予め設定された1ステップに相当する電流量を増加させるような信号であれば良い。電流設定値保存回路33は、新たな電流設定値を記憶し、対応する電流設定信号VIを出力して再びステップS1へと戻る。
VP0−VP180差動対信号:Vi1=Va・sin(2πfo)
VP90−VP270差動対信号:Vi2=−Va・cos(2πfo+φ)
Vo1=(b・Va2/2){−sin(2π・2fo+φ)+sinφ}
Vo2=(b・Va2/2)sinφ=Vb・sinφ。
1 可変電流生成回路
2 電圧制御発振部
3 第1の最適化回路
4 第2の最適化回路
31 ピーク電圧検出回路
32 第1の判定回路
33 電流設定値保存回路
41 90度位相検波器
42 第2の判定回路
43 容量設定値保存回路
5 ミキサー回路
6 低帯域通過フィルタ
Ip 電流源
SW1〜SW4 第1〜第4のスイッチ
L11、L12、L21、L22 インダクタ
C11〜C24、CV11〜CV24、 可変キャパシタ
P1〜P3 PMOSトランジスタ
N11〜N14、N21〜N24 NMOSトランジスタ
VDD 電源電圧
Claims (7)
- 電圧制御発振部へ動作電流を供給する可変電流生成回路と、
インダクタと可変容量素子とで構成される共振回路を有し、前記可変電流生成回路の生成する電流に基づいた振幅の出力信号を出力する前記電圧制御発振部と、
前記出力信号が入力され、前記可変電流生成回路の出力する電流の変化量に対する当該出力信号の振幅変化に基づいて電流設定信号を生成し、前記可変電流生成回路に供給する第1の最適化回路とを有する電圧制御発振器。 - 前記第1の最適化回路は、さらに、
前記電圧制御発振部の出力信号のピーク電圧と、予め設定された基準耐圧値とを比較し、当該比較の結果に基づいて、前記電流設定信号を生成することを特徴とする請求項1記載の電圧制御発振器。 - 前記第1の最適化回路は、第1の電流設定値変化に基づいた前記可変電流回路の出力する電流の所定の変化量に対応する出力信号の振幅変化を基準値として記憶し、第2の電流設定値変化に基づいた前記可変電流回路の出力する電流の前記所定の変化量に対応する出力信号の振幅変化が前記基準値に満たない場合に、最適化動作を終了することを特徴とする請求項1あるいは2に記載の電圧制御発振器。
- 前記電圧制御発振器は、多相出力の電圧制御発振器であることを特徴とする請求項1乃至3のいずれか1項に記載の電圧制御発振器。
- 前記電圧制御発振器は、前記多相出力の出力間位相誤差を補正する第2の最適化回路を有することを特徴とする請求項4記載の電圧制御発振器。
- 前記第2の最適化回路は、前記多相出力の出力間位相誤差を検出する位相検波回路と、前記位相誤差に基づいて位相誤差を補正する信号を出力する判定回路とを有することを特徴とする請求項5記載の電圧制御発振器
- 前記位相誤差を補正する信号は、前記可変容量素子の容量値を設定する信号であることを特徴とする請求項6記載の電圧制御発振器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085080A JP4908284B2 (ja) | 2007-03-28 | 2007-03-28 | 電圧制御発振器 |
US12/076,740 US7911284B2 (en) | 2007-03-28 | 2008-03-21 | Voltage controlled oscillator |
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JP2007085080A JP4908284B2 (ja) | 2007-03-28 | 2007-03-28 | 電圧制御発振器 |
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JP2008245078A true JP2008245078A (ja) | 2008-10-09 |
JP4908284B2 JP4908284B2 (ja) | 2012-04-04 |
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JP2007085080A Expired - Fee Related JP4908284B2 (ja) | 2007-03-28 | 2007-03-28 | 電圧制御発振器 |
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JP (1) | JP4908284B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101032874B1 (ko) | 2009-09-23 | 2011-05-06 | 한양대학교 산학협력단 | 분리된 스위칭 바이어스 구조를 가지는 전압 제어 발진기 |
JPWO2012111131A1 (ja) * | 2011-02-17 | 2014-07-03 | 国立大学法人東京工業大学 | ミリ波帯無線送受信装置 |
JP2019192983A (ja) * | 2018-04-19 | 2019-10-31 | 富士通株式会社 | 4相発振器、fsk変調器及び光モジュール |
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US7764130B2 (en) | 1999-01-22 | 2010-07-27 | Multigig Inc. | Electronic circuitry |
ATE400923T1 (de) | 2000-05-11 | 2008-07-15 | Multigig Ltd | Elektronischer pulserzeuger und oszillator |
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US8258885B2 (en) * | 2010-08-09 | 2012-09-04 | Fujitsu Limited | Frequency-coupled LCVCO |
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US9531389B1 (en) * | 2014-09-15 | 2016-12-27 | Farbod Behbahani | Fractional-N synthesizer VCO coarse tuning |
EP3010150A1 (en) * | 2014-10-16 | 2016-04-20 | Stichting IMEC Nederland | Oscillator device |
US10312922B2 (en) | 2016-10-07 | 2019-06-04 | Analog Devices, Inc. | Apparatus and methods for rotary traveling wave oscillators |
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JP3760100B2 (ja) | 2000-02-25 | 2006-03-29 | 株式会社東芝 | 電圧制御発振器 |
ATE311039T1 (de) * | 2000-06-28 | 2005-12-15 | Thomson Licensing | Hochfrequenz-oszillator |
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2007
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2008
- 2008-03-21 US US12/076,740 patent/US7911284B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101032874B1 (ko) | 2009-09-23 | 2011-05-06 | 한양대학교 산학협력단 | 분리된 스위칭 바이어스 구조를 가지는 전압 제어 발진기 |
JPWO2012111131A1 (ja) * | 2011-02-17 | 2014-07-03 | 国立大学法人東京工業大学 | ミリ波帯無線送受信装置 |
JP5651824B2 (ja) * | 2011-02-17 | 2015-01-14 | 国立大学法人東京工業大学 | ミリ波帯無線送受信装置 |
JP2019192983A (ja) * | 2018-04-19 | 2019-10-31 | 富士通株式会社 | 4相発振器、fsk変調器及び光モジュール |
JP7056346B2 (ja) | 2018-04-19 | 2022-04-19 | 富士通株式会社 | 4相発振器、fsk変調器及び光モジュール |
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Publication number | Publication date |
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JP4908284B2 (ja) | 2012-04-04 |
US7911284B2 (en) | 2011-03-22 |
US20080238559A1 (en) | 2008-10-02 |
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