JP5639910B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5639910B2
JP5639910B2 JP2011017534A JP2011017534A JP5639910B2 JP 5639910 B2 JP5639910 B2 JP 5639910B2 JP 2011017534 A JP2011017534 A JP 2011017534A JP 2011017534 A JP2011017534 A JP 2011017534A JP 5639910 B2 JP5639910 B2 JP 5639910B2
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JP
Japan
Prior art keywords
wiring
film
functional circuit
layer
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011017534A
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English (en)
Japanese (ja)
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JP2011159974A5 (enExample
JP2011159974A (ja
Inventor
黒川　義元
義元 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011017534A priority Critical patent/JP5639910B2/ja
Publication of JP2011159974A publication Critical patent/JP2011159974A/ja
Publication of JP2011159974A5 publication Critical patent/JP2011159974A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2011017534A 2002-12-25 2011-01-31 半導体装置 Expired - Fee Related JP5639910B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011017534A JP5639910B2 (ja) 2002-12-25 2011-01-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002373491 2002-12-25
JP2002373491 2002-12-25
JP2011017534A JP5639910B2 (ja) 2002-12-25 2011-01-31 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005254996A Division JP5084120B2 (ja) 2002-12-25 2005-09-02 表示装置

Publications (3)

Publication Number Publication Date
JP2011159974A JP2011159974A (ja) 2011-08-18
JP2011159974A5 JP2011159974A5 (enExample) 2012-03-15
JP5639910B2 true JP5639910B2 (ja) 2014-12-10

Family

ID=32708228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011017534A Expired - Fee Related JP5639910B2 (ja) 2002-12-25 2011-01-31 半導体装置

Country Status (2)

Country Link
US (4) US7408196B2 (enExample)
JP (1) JP5639910B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107405975A (zh) * 2015-03-23 2017-11-28 日本发条株式会社 稳定杆及其制造方法

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US7408196B2 (en) * 2002-12-25 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US7557779B2 (en) 2003-06-13 2009-07-07 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2005004096A1 (ja) * 2003-07-08 2005-01-13 Semiconductor Energy Laboratory Co., Ltd. 表示装置およびその駆動方法
US7132751B2 (en) * 2004-06-22 2006-11-07 Intel Corporation Memory cell using silicon carbide
WO2006028195A1 (en) * 2004-09-09 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Wireless chip
TWI267014B (en) * 2005-02-21 2006-11-21 Au Optronics Corp Organic light emitting diode display
WO2007043602A1 (en) * 2005-10-14 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and communication system using the semiconductor device
JP4144892B2 (ja) * 2006-08-28 2008-09-03 キヤノン株式会社 光電変換装置及び撮像装置
WO2009057444A1 (ja) * 2007-11-02 2009-05-07 Sharp Kabushiki Kaisha 回路基板及び表示装置
US7977678B2 (en) 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
JP2011165858A (ja) * 2010-02-09 2011-08-25 Renesas Electronics Corp 半導体パッケージ
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6045176B2 (ja) 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2016025147A (ja) * 2014-07-17 2016-02-08 ソニー株式会社 電子デバイスおよびその製造方法、並びに電子機器
KR102278334B1 (ko) * 2014-10-01 2021-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102377794B1 (ko) * 2015-07-06 2022-03-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN107845663B (zh) * 2017-10-27 2020-12-08 武汉天马微电子有限公司 一种显示面板及显示装置
US10763323B2 (en) 2018-06-22 2020-09-01 Apple Inc. Power and data routing structures for organic light-emitting diode displays
CN109309100B (zh) * 2018-09-29 2020-12-29 京东方科技集团股份有限公司 薄膜晶体管、栅极驱动电路和显示面板

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Publication number Priority date Publication date Assignee Title
JPS6340347A (ja) 1986-08-05 1988-02-20 Mitsubishi Electric Corp 半導体集積回路装置
JPH0738414B2 (ja) 1987-01-09 1995-04-26 株式会社東芝 半導体集積回路
JPH01189936A (ja) 1988-01-26 1989-07-31 Fujitsu Ltd 集積回路の自動配線方法
JPH0230176A (ja) 1988-07-19 1990-01-31 Nec Corp 半導体集積回路
JPH03123076A (ja) 1989-10-04 1991-05-24 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
KR940004322B1 (ko) 1991-09-05 1994-05-19 삼성전자 주식회사 액정표시장치 및 그 제조방법
JPH05226584A (ja) 1992-02-12 1993-09-03 Yamaha Corp 集積回路装置
JP3006739B2 (ja) 1992-04-20 2000-02-07 松下電器産業株式会社 半導体集積回路装置
US5446410A (en) 1992-04-20 1995-08-29 Matsushita Electric Industrial Co.,Ltd. Semiconductor integrated circuit
TW329500B (en) * 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
JPH10107152A (ja) 1996-09-30 1998-04-24 Yamaha Corp 集積回路装置とその電源配線形成法
JP2001505682A (ja) * 1996-10-09 2001-04-24 ペーアーファウ カード ゲームベーハ スマートカードの製造方法及び製造のための接続配置
TW486581B (en) * 1998-01-06 2002-05-11 Seiko Epson Corp Semiconductor device, substrate for electro-optical device, electro-optical device, electronic equipment, and projection display apparatus
JP4330676B2 (ja) 1998-08-17 2009-09-16 株式会社東芝 半導体集積回路
US6724149B2 (en) 1999-02-24 2004-04-20 Sanyo Electric Co., Ltd. Emissive display device and electroluminescence display device with uniform luminance
JP2001274265A (ja) * 2000-03-28 2001-10-05 Mitsubishi Electric Corp 半導体装置
US7088322B2 (en) * 2000-05-12 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW554637B (en) 2000-05-12 2003-09-21 Semiconductor Energy Lab Display device and light emitting device
US8610645B2 (en) 2000-05-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2002033456A (ja) 2000-07-18 2002-01-31 Seiko Epson Corp 半導体集積回路における容量素子及びその電源配線
US6384727B1 (en) * 2000-08-02 2002-05-07 Motorola, Inc. Capacitively powered radio frequency identification device
US6828584B2 (en) * 2001-05-18 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4647843B2 (ja) * 2001-06-28 2011-03-09 株式会社日立製作所 液晶表示装置
GB0130600D0 (en) * 2001-12-21 2002-02-06 Koninkl Philips Electronics Nv Active matrix electroluminescent display device
JP2004103821A (ja) 2002-09-10 2004-04-02 Toshiba Corp 半導体集積回路
US7408196B2 (en) * 2002-12-25 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107405975A (zh) * 2015-03-23 2017-11-28 日本发条株式会社 稳定杆及其制造方法
CN107405975B (zh) * 2015-03-23 2019-12-20 日本发条株式会社 稳定杆及其制造方法

Also Published As

Publication number Publication date
US20080303065A1 (en) 2008-12-11
US8569802B2 (en) 2013-10-29
US8058672B2 (en) 2011-11-15
US20040135175A1 (en) 2004-07-15
JP2011159974A (ja) 2011-08-18
US8227837B2 (en) 2012-07-24
US7408196B2 (en) 2008-08-05
US20120032181A1 (en) 2012-02-09
US20120306837A1 (en) 2012-12-06

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