JP5635013B2 - エピタキシャル成長用テンプレート及びその作製方法 - Google Patents
エピタキシャル成長用テンプレート及びその作製方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 59
- 229910052594 sapphire Inorganic materials 0.000 claims description 57
- 239000010980 sapphire Substances 0.000 claims description 57
- 230000000052 comparative effect Effects 0.000 description 47
- 229910002704 AlGaN Inorganic materials 0.000 description 20
- 239000013078 crystal Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 18
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 16
- 229910017840 NH 3 Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 9
- 240000004050 Pentaglottis sempervirens Species 0.000 description 7
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 7
- 239000012670 alkaline solution Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005211 surface analysis Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Description
前記凹凸加工した前記サファイア(0001)基板面に、前記凸部頂部のエッジ部を除く平坦面上にC+軸配向したAlN層が成長するようにC軸配向制御を行って、前記凹凸加工で形成された凹部に堆積するAlN層によって前記凹部に新たな凹部が形成されるように初期AlN層をエピタキシャル成長させ、
前記初期AlN層上に、横方向成長法を用いてAlxGayN(0001)層(1≧x>0,x+y=1)をエピタキシャル成長させ、
前記新たな凹部の上方が、前記凸部頂部の上方から横方向成長した前記AlxGayN(0001)層で覆われることを特徴とするエピタキシャル成長用テンプレートの作製方法を提供する。
前記初期AlN層は、前記凸部頂部のエッジ部を除く平坦面上に成長したAlN層がC+軸配向しており、前記凹凸加工で形成された凹部に堆積したAlN層によって前記凹部に新たな凹部が形成され、前記新たな凹部の上方が、前記凸部頂部の上方から横方向成長した前記AlxGayN(0001)層で覆われていることを特徴とするエピタキシャル成長用テンプレートを提供する。
図2及び図3に、実施例1及び実施例2のSEM写真(断面図(a)と俯瞰図(b))を示す。実施例1は、サファイア基板2の表面に形成された溝6の幅及び間隔が夫々3μm、深さが1μmであり、初期AlN層3及びAlN層4の膜厚は夫々1.0μmと9.8μmである。実施例2は、サファイア基板2の表面に形成された溝6の幅及び間隔が夫々2μm、深さが0.5μmであり、初期AlN層3及びAlN層4の膜厚は夫々1.0μmと6.2μmである。
図4及び図5に、比較例1及び実施例2のSEM写真を示す。図4は、比較例1のAlN層4を成膜した後(a)とKOHアルカリ液でエッチング処理した後(b)の俯瞰図であり、図5は、図3に示した実施例2をKOHアルカリ液でエッチング処理した後の俯瞰図である。
図6及び図7に、実施例3と比較例2のSEM写真を示す。図6は、実施例3の初期AlN層3を成膜した後の断面図(a)と俯瞰図(b)であり、図7は、比較例2の初期AlN層3を成膜した後の断面図(a)と俯瞰図(b)である。比較例2の初期AlN層3は、比較例1のC−軸配向した初期AlN層3と同じ成長条件で成膜されている。実施例3及び比較例2は、何れも、サファイア基板2の表面に形成された溝6の幅及び間隔が夫々3μm、深さが0.5μmである。実施例3の初期AlN層3の膜厚は0.7μmであり、比較例2のC−軸配向した初期AlN層3の膜厚は0.5μmである。
図8に、比較例3のSEM写真を示す。図8は、比較例3のAlN層4を成膜した後の断面図(a)と俯瞰図(b)である。
図9に、実施例4のSEM写真を示す。図9は、実施例4のAlN層4を成膜した後に、その上層にMOVPE法によりAl0.8Ga0.2N層を連続して成長させた後の断面図(a)と俯瞰図(b)である。尚、Al0.8Ga0.2N層の成長温度は1160℃であり、TMA、TMG(トリメチルガリウム)、NH3の流量比(NH3/MO)は899である。実施例5は、サファイア基板2の表面に形成された溝6の幅が5μm、溝6の間隔が5μm、深さが0.3μmであり、初期AlN層3、AlN層4、Al0.8Ga0.2N層の各膜厚は夫々1.3μm、5.8μm、1.8μmである。
図10に、実施例5のAlN層4を成膜した後の断面TEM写真(明視野図)を示す。実施例5は、サファイア基板2の表面に形成された溝6の幅及び間隔が2μm、深さが0.5μmであり、初期AlN層3、AlN層4の膜厚は夫々1.0μm、6.5μmである。
図12に、実施例6〜実施例8のAlN層4の表面解析を、XRC法で実施した結果を示す。実施例6〜実施例8は、サファイア基板2の表面に形成された溝6の幅が3μm、間隔が5μm、深さが1μm、0.5μm、0.3μmの3種類であり、初期AlN層3及びAlN層4の膜厚は、±0.3μm程度の誤差範囲内で何れも1.3μmと5μmである。実施例6〜実施例8は、溝6の深さが異なるだけで、後の条件は全く同じである。図12は、実施例6〜実施例8の各半値幅FWHM(arcsec)を示している。尚、図12において、白丸○がチルト分布の平均の半値幅を、黒丸●がツイスト分布の平均の半値幅を夫々示している。
2: サファイア(0001)基板
3: 初期AlN層
4: AlxGayN(0001)層
5: Niマスク
6: サファイア基板表面に加工された溝
7: 凸部頂部
8: 初期AlN層の凹部
9: 初期AlN層の凸部表面
10: 空洞(ボイド)
Claims (4)
- サファイア(0001)基板の表面を、凸部頂部が平坦で所定の平面視パターンとなるように凹凸加工し、
前記凹凸加工した前記サファイア(0001)基板面に、前記凸部頂部のエッジ部を除く平坦面上にC+軸配向したAlN層が成長するようにC軸配向制御を行って、前記凹凸加工で形成された凹部に堆積するAlN層によって前記凹部に新たな凹部が形成されるように、前記凸部頂部と前記凹部の側壁面及び底面を覆う初期AlN層をエピタキシャル成長させ、
前記初期AlN層上に、前記初期AlN層の成長条件とは異なる成長条件による横方向成長法を用い、前記初期AlN層の成長速度より速い成長速度で、AlxGayN(0001)層(1≧x>0,x+y=1)をエピタキシャル成長させ、
前記新たな凹部の上方が、前記凸部頂部の上方から横方向成長した前記AlxGayN(0001)層で覆われることを特徴とするエピタキシャル成長用テンプレートの作製方法。 - 前記サファイア(0001)基板の表面に形成する前記凹部の深さが1.0μm以下であることを特徴とする請求項1に記載のエピタキシャル成長用テンプレートの作製方法。
- 前記初期AlN層の成長時において、前記凹凸加工で形成された段差部近傍では、C+軸配向していないAlN層が成長することを特徴とする請求項1または2に記載のエピタキシャル成長用テンプレートの作製方法。
- 前記AlxGayN(0001)層がAlN(0001)層であることを特徴とする請求項1または2に記載のエピタキシャル成長用テンプレートの作製方法。
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