JP5630021B2 - 記憶素子および記憶装置 - Google Patents

記憶素子および記憶装置 Download PDF

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Publication number
JP5630021B2
JP5630021B2 JP2010009457A JP2010009457A JP5630021B2 JP 5630021 B2 JP5630021 B2 JP 5630021B2 JP 2010009457 A JP2010009457 A JP 2010009457A JP 2010009457 A JP2010009457 A JP 2010009457A JP 5630021 B2 JP5630021 B2 JP 5630021B2
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Japan
Prior art keywords
layer
high resistance
electrode
memory
resistance layer
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Expired - Fee Related
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JP2010009457A
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English (en)
Japanese (ja)
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JP2011151085A5 (enExample
JP2011151085A (ja
Inventor
周一郎 保田
周一郎 保田
荒谷　勝久
勝久 荒谷
大場　和博
和博 大場
宏彰 清
宏彰 清
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Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010009457A priority Critical patent/JP5630021B2/ja
Priority to TW99145636A priority patent/TWI467571B/zh
Priority to KR1020110002192A priority patent/KR101796790B1/ko
Priority to US13/004,976 priority patent/US8710482B2/en
Priority to CN201110005533.5A priority patent/CN102185101B/zh
Publication of JP2011151085A publication Critical patent/JP2011151085A/ja
Publication of JP2011151085A5 publication Critical patent/JP2011151085A5/ja
Priority to US14/090,752 priority patent/US8847194B2/en
Application granted granted Critical
Publication of JP5630021B2 publication Critical patent/JP5630021B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2010009457A 2010-01-19 2010-01-19 記憶素子および記憶装置 Expired - Fee Related JP5630021B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010009457A JP5630021B2 (ja) 2010-01-19 2010-01-19 記憶素子および記憶装置
TW99145636A TWI467571B (zh) 2010-01-19 2010-12-23 記憶體組件及記憶體裝置
KR1020110002192A KR101796790B1 (ko) 2010-01-19 2011-01-10 기억 소자 및 기억 장치
CN201110005533.5A CN102185101B (zh) 2010-01-19 2011-01-12 存储元件和存储装置
US13/004,976 US8710482B2 (en) 2010-01-19 2011-01-12 Memory component and memory device
US14/090,752 US8847194B2 (en) 2010-01-19 2013-11-26 Memory component including an ion source layer and a resistance change layer, and a memory device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010009457A JP5630021B2 (ja) 2010-01-19 2010-01-19 記憶素子および記憶装置

Publications (3)

Publication Number Publication Date
JP2011151085A JP2011151085A (ja) 2011-08-04
JP2011151085A5 JP2011151085A5 (enExample) 2013-02-21
JP5630021B2 true JP5630021B2 (ja) 2014-11-26

Family

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JP2010009457A Expired - Fee Related JP5630021B2 (ja) 2010-01-19 2010-01-19 記憶素子および記憶装置

Country Status (5)

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US (2) US8710482B2 (enExample)
JP (1) JP5630021B2 (enExample)
KR (1) KR101796790B1 (enExample)
CN (1) CN102185101B (enExample)
TW (1) TWI467571B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012186316A (ja) * 2011-03-04 2012-09-27 Sony Corp 記憶素子および記憶装置
US8853099B2 (en) * 2011-12-16 2014-10-07 Intermolecular, Inc. Nonvolatile resistive memory element with a metal nitride containing switching layer
JP2013201405A (ja) 2012-03-26 2013-10-03 Toshiba Corp 不揮発性記憶装置
JP6162931B2 (ja) * 2012-06-19 2017-07-12 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
KR20130142518A (ko) * 2012-06-19 2013-12-30 에스케이하이닉스 주식회사 저항성 메모리 소자와 이를 포함하는 메모리 장치 및 데이터 처리 시스템
JP5783961B2 (ja) 2012-07-09 2015-09-24 株式会社東芝 不揮発性記憶装置
CN104871314B (zh) * 2012-12-25 2019-03-08 索尼半导体解决方案公司 存储元件和存储装置
CN103078054B (zh) * 2013-01-04 2015-06-03 华中科技大学 一种模拟生物神经元和神经突触的单元、装置及方法
US20140264224A1 (en) * 2013-03-14 2014-09-18 Intermolecular, Inc. Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles
JP2017224688A (ja) * 2016-06-14 2017-12-21 ソニー株式会社 回路素子、記憶装置、電子機器、回路素子への情報の書き込み方法、および回路素子からの情報の読み出し方法
KR20180057763A (ko) * 2016-11-21 2018-05-31 포항공과대학교 산학협력단 가파른 기울기의 저항변화를 갖는 원자기반 스위칭 소자 및 이를 포함하는 원자기반 전계효과 트랜지스터
CN107732010B (zh) * 2017-09-29 2020-07-10 华中科技大学 一种选通管器件及其制备方法
KR102567759B1 (ko) * 2021-07-12 2023-08-17 한양대학교 산학협력단 선택 소자 및 이를 이용한 메모리 소자

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP4815804B2 (ja) 2005-01-11 2011-11-16 ソニー株式会社 記憶素子及び記憶装置
WO2007057972A1 (ja) * 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
FR2895531B1 (fr) * 2005-12-23 2008-05-09 Commissariat Energie Atomique Procede ameliore de realisation de cellules memoires de type pmc
JP2008224711A (ja) 2007-03-08 2008-09-25 Canon Inc 画像形成装置
JP5088036B2 (ja) * 2007-08-06 2012-12-05 ソニー株式会社 記憶素子および記憶装置
JP5050813B2 (ja) * 2007-11-29 2012-10-17 ソニー株式会社 メモリセル
US7897953B2 (en) * 2008-01-16 2011-03-01 Micron Technology, Inc. Multi-level programmable PCRAM memory
US7821810B2 (en) * 2008-03-14 2010-10-26 Micron Technology, Inc. Phase change memory adaptive programming
US7852658B2 (en) * 2008-03-14 2010-12-14 Micron Technology, Inc. Phase change memory cell with constriction structure
JP5397668B2 (ja) * 2008-09-02 2014-01-22 ソニー株式会社 記憶素子および記憶装置
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Also Published As

Publication number Publication date
KR101796790B1 (ko) 2017-11-10
TW201140582A (en) 2011-11-16
TWI467571B (zh) 2015-01-01
US20110175049A1 (en) 2011-07-21
US20140084235A1 (en) 2014-03-27
JP2011151085A (ja) 2011-08-04
US8710482B2 (en) 2014-04-29
US8847194B2 (en) 2014-09-30
CN102185101B (zh) 2014-11-26
CN102185101A (zh) 2011-09-14
KR20110085885A (ko) 2011-07-27

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