JP5613636B2 - 液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体 - Google Patents

液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体 Download PDF

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JP5613636B2
JP5613636B2 JP2011164651A JP2011164651A JP5613636B2 JP 5613636 B2 JP5613636 B2 JP 5613636B2 JP 2011164651 A JP2011164651 A JP 2011164651A JP 2011164651 A JP2011164651 A JP 2011164651A JP 5613636 B2 JP5613636 B2 JP 5613636B2
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supply
valve
liquid
processing apparatus
pipe
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JP2011164651A
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Japanese (ja)
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JP2013030559A (ja
JP2013030559A5 (https=
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伊藤　規宏
規宏 伊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011164651A priority Critical patent/JP5613636B2/ja
Priority to KR1020120080725A priority patent/KR101761429B1/ko
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Publication of JP2013030559A5 publication Critical patent/JP2013030559A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2011164651A 2011-07-27 2011-07-27 液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体 Active JP5613636B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011164651A JP5613636B2 (ja) 2011-07-27 2011-07-27 液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体
KR1020120080725A KR101761429B1 (ko) 2011-07-27 2012-07-24 액처리 장치, 액처리 장치의 제어 방법, 및 컴퓨터 판독 가능한 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011164651A JP5613636B2 (ja) 2011-07-27 2011-07-27 液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014181295A Division JP5913492B2 (ja) 2014-09-05 2014-09-05 液処理装置

Publications (3)

Publication Number Publication Date
JP2013030559A JP2013030559A (ja) 2013-02-07
JP2013030559A5 JP2013030559A5 (https=) 2013-10-03
JP5613636B2 true JP5613636B2 (ja) 2014-10-29

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JP2011164651A Active JP5613636B2 (ja) 2011-07-27 2011-07-27 液処理装置、液処理装置の制御方法、コンピュータプログラム、及びコンピュータ可読記憶媒体

Country Status (2)

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JP (1) JP5613636B2 (https=)
KR (1) KR101761429B1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6216200B2 (ja) * 2013-09-30 2017-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6439964B2 (ja) * 2014-09-17 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6328538B2 (ja) * 2014-11-11 2018-05-23 東京エレクトロン株式会社 基板液処理装置の洗浄方法、記憶媒体及び基板液処理装置
JP6625385B2 (ja) * 2015-09-28 2019-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2017212335A (ja) * 2016-05-25 2017-11-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11094568B2 (en) * 2017-04-24 2021-08-17 Tokyo Electron Limited Processing apparatus, abnormality detection method, and storage medium
JP6925872B2 (ja) 2017-05-31 2021-08-25 東京エレクトロン株式会社 基板液処理装置、処理液供給方法及び記憶媒体
JP7071209B2 (ja) * 2018-05-11 2022-05-18 株式会社Ｓｃｒｅｅｎホールディングス 処理液吐出装置、処理液吐出方法、および基板処理装置
KR102139606B1 (ko) * 2018-12-21 2020-07-30 세메스 주식회사 기판 처리 장치 및 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073718B2 (ja) * 2002-06-26 2008-04-09 大日本スクリーン製造株式会社 基板処理装置、基板処理システム、およびプログラム
JP4172769B2 (ja) * 2003-03-10 2008-10-29 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2010073826A (ja) * 2008-09-17 2010-04-02 Realize Advanced Technology Ltd 処理液供給装置

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KR20130014024A (ko) 2013-02-06
JP2013030559A (ja) 2013-02-07
KR101761429B1 (ko) 2017-07-25

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