JP5613309B2 - 光学素子及びそれを用いた半導体発光装置 - Google Patents
光学素子及びそれを用いた半導体発光装置 Download PDFInfo
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- JP5613309B2 JP5613309B2 JP2013200226A JP2013200226A JP5613309B2 JP 5613309 B2 JP5613309 B2 JP 5613309B2 JP 2013200226 A JP2013200226 A JP 2013200226A JP 2013200226 A JP2013200226 A JP 2013200226A JP 5613309 B2 JP5613309 B2 JP 5613309B2
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- 229910020068 MgAl Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
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- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/02—Frequency-changing of light, e.g. by quantum counters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Planar Illumination Modules (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
図1(a)及び(b)に示すように、第1の実施形態の光学素子110は、入射光の波長を変換して出射する蛍光体光学素子である。図1は、液晶テレビジョン受像器等のエッジライト型の光源に適した棒状の構成の光学素子110を示している。図1に示すように光学素子110は、蛍光体層113と、蛍光体層113の第1の面113aの上に熱伝導層114を介して設けられた第1の光学部材111と、第2の面113bの上に設けられた第2の光学部材112とを有している。
図18に示すように、第2の実施形態の光学素子310は、第1の基板311と、第1の基板311の上に反射層314を介在させて形成された蛍光体層313と、蛍光体層313の上に形成された微小レンズ312とを有している。
110A 光学素子
110B 光学素子
110C 光学素子
110D 光学素子
111 第1の光学部材
111A 第1の透明基板
111B 微小レンズ
112 第2の光学部材
112A 第2の透明基板
112B 微小レンズ
113 蛍光体層
113A 樹脂
113a 第1の面
113b 第2の面
113c 微小領域
114 熱伝導層
121 光
122 光
130 放熱板
140 発光素子
141 サブマウント
142 基台
150 導光素子
151 光分岐部
152 コリメートレンズ
161 マスクパターン
162 マスクパターン
173 蛍光体層
173A 第1の領域
173B 第2の領域
173a 開口部
181 第1の光学部材
181A 第1の透明基板
181B 回折格子
191 反射鏡
191A 第1の透明基板
191B 回折格子
191C 反射鏡
192 第2の透明基板
193 蛍光体層
194 熱伝導層
200 画像表示装置
210 光源
212 導光板
214 画像表示部
250 画像表示装置
251 発光素子
252 コリメートレンズ
253 光変調素子
254 投影レンズ
255 投影画像
261 発光素子
262 コリメートレンズ
300 発光装置
310 光学素子
310A 第1の領域
310B 第2の領域
311 第1の基板
312 微小レンズ
312A 第2の基板
313 蛍光体層
313A 第1の領域
313B 第2の領域
313a 開口部
314 反射層
340 発光素子
351 レジストマスク
352 コリメートレンズ
360 ダイクロイックミラー
Claims (5)
- 第1の波長の光により励起され、前記第1の波長とは異なる第2の波長の光を放射する蛍光体を含む蛍光体層と、
前記蛍光体層の第1の面の側に配置された光学部材とを備え、
前記光学部材は、前記蛍光体層と反対側の面に設けられた回折格子と、前記蛍光体層と対向する面に設けられた反射鏡とを有し、
前記回折格子は、前記蛍光体層に光を集光し、
前記反射鏡は、前記蛍光体層から放射された光を反射し、且つ、平行光に変換する、光学素子。 - 第1の波長の光により励起され、前記第1の波長とは異なる第2の波長の光を放射する蛍光体を含む蛍光体層と、
前記蛍光体層の第1の面の側に配置された光学部材と、
前記蛍光体層の第1の面と反対側の第2の面に形成された反射層とを備え、
前記光学部材は、凸レンズであり、
前記凸レンズは、前記蛍光体層に光を集光し、
前記反射層は、前記蛍光体層から放射された光を反射し、
前記凸レンズは、前記反射層により反射された光を平行光に変換する、光学素子。 - 前記蛍光体層の前記第1の面と反対側の第2の面に形成され、前記蛍光体層よりも熱伝導率が高い熱伝導層をさらに備えている、請求項1又は2に記載の光学素子。
- 前記熱伝導層は、酸化亜鉛、窒化アルミニウム又はダイヤモンドからなる、請求項3に記載の光学素子。
- 請求項1〜4のいずれか1項に記載の光学素子と、
前記第1の波長の光を出射する発光素子と、
前記発光素子から出射された光を互いに並行な光軸を有する複数の光路に分割して、前記光学素子に入射させる光分岐部とを備えている、半導体発光装置。
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JP5613309B2 true JP5613309B2 (ja) | 2014-10-22 |
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JP2013200226A Expired - Fee Related JP5613309B2 (ja) | 2011-07-12 | 2013-09-26 | 光学素子及びそれを用いた半導体発光装置 |
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US (1) | US8969903B2 (ja) |
JP (2) | JP5552573B2 (ja) |
CN (1) | CN103503178B (ja) |
WO (1) | WO2013008361A1 (ja) |
Families Citing this family (42)
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CN105264042A (zh) * | 2013-06-05 | 2016-01-20 | 柯尼卡美能达株式会社 | 光学材料、光学膜及发光器件 |
JP6159302B2 (ja) * | 2013-08-23 | 2017-07-05 | 富士フイルム株式会社 | 光変換部材、バックライトユニット、および液晶表示装置、ならびに光変換部材の製造方法 |
US9958601B2 (en) * | 2013-09-19 | 2018-05-01 | University Of Utah Research Foundation | Display backlight |
KR102125450B1 (ko) * | 2013-12-05 | 2020-06-22 | 엘지이노텍 주식회사 | 광변환부재 및 이를 포함하는 조명장치 |
US9515239B2 (en) | 2014-02-28 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device and light-emitting apparatus |
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DE102014113275A1 (de) * | 2014-09-15 | 2016-03-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
CN104835884B (zh) * | 2015-03-03 | 2017-09-19 | 杭州士兰明芯科技有限公司 | Led结构及其制作方法、发光方法 |
CN104681548B (zh) * | 2015-03-03 | 2017-10-27 | 杭州士兰明芯科技有限公司 | 一种led发光结构及其制作方法 |
US9726348B2 (en) * | 2015-03-05 | 2017-08-08 | Christie Digital Systems Usa, Inc. | Wavelength conversion material array |
US10031276B2 (en) | 2015-03-13 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | Display apparatus including photoluminescent layer |
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KR101064036B1 (ko) * | 2010-06-01 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 시스템 |
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