JP5608157B2 - 基板エッチングシステム及びプロセスの方法及び装置 - Google Patents

基板エッチングシステム及びプロセスの方法及び装置 Download PDF

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Publication number
JP5608157B2
JP5608157B2 JP2011500951A JP2011500951A JP5608157B2 JP 5608157 B2 JP5608157 B2 JP 5608157B2 JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011500951 A JP2011500951 A JP 2011500951A JP 5608157 B2 JP5608157 B2 JP 5608157B2
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gas
chamber
flow
etching
substrate
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JP2011515855A5 (zh
JP2011515855A (ja
Inventor
シャルマ ブイ パマシー
ジョン シー ファル
クハリド シラジュディン
エズラ アール ゴールド
ジェームズ ピー クルーズ
スコット オルシェウスキー
ロイ シー ナンゴイ
サラブジェート シン
ダグラス エー ブッフバーガー
ジャレッド エー リー
チュンレイ ザング
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2011500951A 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置 Active JP5608157B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Publications (3)

Publication Number Publication Date
JP2011515855A JP2011515855A (ja) 2011-05-19
JP2011515855A5 JP2011515855A5 (zh) 2012-05-10
JP5608157B2 true JP5608157B2 (ja) 2014-10-15

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ID=41091536

Family Applications (1)

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JP2011500951A Active JP5608157B2 (ja) 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置

Country Status (6)

Country Link
US (1) US20090272717A1 (zh)
JP (1) JP5608157B2 (zh)
KR (1) KR20100128333A (zh)
CN (2) CN101978479A (zh)
TW (1) TWI538045B (zh)
WO (1) WO2009117565A2 (zh)

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US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
JP7401458B2 (ja) * 2018-05-22 2023-12-19 イーティーエックス コーポレーション 二次元材料を移すための方法及び装置
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

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Also Published As

Publication number Publication date
CN101978479A (zh) 2011-02-16
US20090272717A1 (en) 2009-11-05
WO2009117565A3 (en) 2009-11-12
KR20100128333A (ko) 2010-12-07
CN102446739B (zh) 2016-01-20
WO2009117565A2 (en) 2009-09-24
CN102446739A (zh) 2012-05-09
TWI538045B (zh) 2016-06-11
JP2011515855A (ja) 2011-05-19
TW201005822A (en) 2010-02-01

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