KR20100128333A - 기판 에칭 시스템 및 프로세스의 방법 및 장치 - Google Patents

기판 에칭 시스템 및 프로세스의 방법 및 장치 Download PDF

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Publication number
KR20100128333A
KR20100128333A KR1020107023432A KR20107023432A KR20100128333A KR 20100128333 A KR20100128333 A KR 20100128333A KR 1020107023432 A KR1020107023432 A KR 1020107023432A KR 20107023432 A KR20107023432 A KR 20107023432A KR 20100128333 A KR20100128333 A KR 20100128333A
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KR
South Korea
Prior art keywords
gas
chamber
etching
substrate
flow
Prior art date
Application number
KR1020107023432A
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English (en)
Korean (ko)
Inventor
샤마 브이. 파마티
존 씨. 파
칼리드 시라주딘
에즈라 알. 골드
제임스 피. 크루즈
스코트 올스제프스키
로이 씨. 난고이
사라브지트 싱
더글라스 에이. 부흐버거
제리드 에이. 이
춘레이 장
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20100128333A publication Critical patent/KR20100128333A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020107023432A 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치 KR20100128333A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05

Publications (1)

Publication Number Publication Date
KR20100128333A true KR20100128333A (ko) 2010-12-07

Family

ID=41091536

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107023432A KR20100128333A (ko) 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치

Country Status (6)

Country Link
US (1) US20090272717A1 (zh)
JP (1) JP5608157B2 (zh)
KR (1) KR20100128333A (zh)
CN (2) CN101978479A (zh)
TW (1) TWI538045B (zh)
WO (1) WO2009117565A2 (zh)

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KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

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KR102001247B1 (ko) * 2011-06-30 2019-07-17 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
JP7401458B2 (ja) * 2018-05-22 2023-12-19 イーティーエックス コーポレーション 二次元材料を移すための方法及び装置
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

Also Published As

Publication number Publication date
CN101978479A (zh) 2011-02-16
JP5608157B2 (ja) 2014-10-15
US20090272717A1 (en) 2009-11-05
WO2009117565A3 (en) 2009-11-12
CN102446739B (zh) 2016-01-20
WO2009117565A2 (en) 2009-09-24
CN102446739A (zh) 2012-05-09
TWI538045B (zh) 2016-06-11
JP2011515855A (ja) 2011-05-19
TW201005822A (en) 2010-02-01

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