JP5600371B2 - 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング - Google Patents

荷電粒子ビーム処理のための保護層のスパッタリング・コーティング Download PDF

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JP5600371B2
JP5600371B2 JP2007031474A JP2007031474A JP5600371B2 JP 5600371 B2 JP5600371 B2 JP 5600371B2 JP 2007031474 A JP2007031474 A JP 2007031474A JP 2007031474 A JP2007031474 A JP 2007031474A JP 5600371 B2 JP5600371 B2 JP 5600371B2
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work piece
charged particle
particle beam
source
sputter
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JP2007250529A (ja
JP2007250529A5 (enExample
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マイケル・シュミット
ジェフ・ブラックウッド
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エフ・イ−・アイ・カンパニー
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/06—Electron-beam welding or cutting within a vacuum chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/0046—Welding
    • B23K15/0086—Welding welding for purposes other than joining, e.g. built-up welding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2007031474A 2006-02-15 2007-02-13 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング Active JP5600371B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77339606P 2006-02-15 2006-02-15
US60/773,396 2006-02-15

Publications (3)

Publication Number Publication Date
JP2007250529A JP2007250529A (ja) 2007-09-27
JP2007250529A5 JP2007250529A5 (enExample) 2010-04-02
JP5600371B2 true JP5600371B2 (ja) 2014-10-01

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JP2007031474A Active JP5600371B2 (ja) 2006-02-15 2007-02-13 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング

Country Status (3)

Country Link
US (1) US7675049B2 (enExample)
EP (2) EP2209047B1 (enExample)
JP (1) JP5600371B2 (enExample)

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JP2008171800A (ja) 2006-10-31 2008-07-24 Fei Co 荷電粒子ビーム処理用保護層
JP5105357B2 (ja) * 2007-11-01 2012-12-26 エスアイアイ・ナノテクノロジー株式会社 欠陥認識方法、欠陥観察方法、及び荷電粒子ビーム装置
EP2151848A1 (en) * 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
NL2004888A (en) * 2009-06-29 2010-12-30 Asml Netherlands Bv Deposition method and apparatus.
JP5595054B2 (ja) 2010-01-29 2014-09-24 株式会社日立ハイテクサイエンス 電子顕微鏡及び試料分析方法
US9187815B2 (en) * 2010-03-12 2015-11-17 United Technologies Corporation Thermal stabilization of coating material vapor stream
US20110223317A1 (en) * 2010-03-12 2011-09-15 United Technologies Corporation Direct thermal stabilization for coating application
US8912490B2 (en) 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
US8859963B2 (en) 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
US9041793B2 (en) * 2012-05-17 2015-05-26 Fei Company Scanning microscope having an adaptive scan
EP2765591B1 (en) 2013-02-08 2016-07-13 FEI Company Sample preparation stage
EP2787523B1 (en) * 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
EP2811506B1 (en) 2013-06-05 2016-04-06 Fei Company Method for imaging a sample in a dual-beam charged particle apparatus
US10186397B2 (en) * 2013-11-11 2019-01-22 Howard Hughes Medical Institute Workpiece holder for workpiece transport apparatus
EP3249676B1 (en) * 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
FR3080947B1 (fr) 2018-05-02 2021-02-19 Centre Nat Rech Scient Microscope electronique en transmission equipe d'au moins une source de jet de matiere balistique
DE102020112220B9 (de) * 2020-05-06 2022-05-25 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät zum Abtragen mindestens eines Materials von einer Materialeinheit und Anordnen des Materials an einem Objekt
US11749496B2 (en) * 2021-06-21 2023-09-05 Fei Company Protective shutter for charged particle microscope
US12308207B2 (en) 2022-08-18 2025-05-20 Applied Materials Israel Ltd. Enhanced deposition rate by thermal isolation cover for GIS manipulator
KR20250157420A (ko) 2023-03-07 2025-11-04 칼 짜이스 에스엠테 게엠베하 하전 입자 빔 이미징을 위한 샘플 준비

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Also Published As

Publication number Publication date
JP2007250529A (ja) 2007-09-27
EP1821146A1 (en) 2007-08-22
EP2209047B1 (en) 2016-01-06
EP2209047A1 (en) 2010-07-21
US20080073587A1 (en) 2008-03-27
US7675049B2 (en) 2010-03-09

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