JP5572767B2 - Ledパッケージの製造方法 - Google Patents
Ledパッケージの製造方法 Download PDFInfo
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- JP5572767B2 JP5572767B2 JP2013538674A JP2013538674A JP5572767B2 JP 5572767 B2 JP5572767 B2 JP 5572767B2 JP 2013538674 A JP2013538674 A JP 2013538674A JP 2013538674 A JP2013538674 A JP 2013538674A JP 5572767 B2 JP5572767 B2 JP 5572767B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 94
- 239000002184 metal Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 75
- 238000000465 moulding Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 9
- 238000004080 punching Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
図示のように、本実施例のLEDパッケージ100は、金属基板110のチップ実装部114に形成されるLEDチップ120の実装領域にキャビティー170が形成され、キャビティー170の底面にLEDチップ120が実装されることができる。前記キャビティー170は、リードフレーム113と陽極端子111及び陰極端子112が形成された金属基板110のプレス加工によるパンチング工程時に同時に形成されることができる。
まず、図6ないし図10は、本発明によるLEDパッケージの製造工程が示された工程図である。
Claims (8)
- ストリップ形態に切断された金属部材を準備する段階と;
前記金属部材に一定の間隔で陽極端子と陰極端子が形成された金属基板を形成する段階と;
前記金属基板のチップ実装部にLEDチップを実装する段階と;
前記LEDチップを陽極端子及び陰極端子とワイヤボンディングする段階と;
前記金属基板の上部にモールディング部とレンズ部を一体に形成する段階と;を含み、
前記金属基板は、外郭にリードフレームが形成されたチップ実装部で構成され、前記リードフレームの角部に切開部によって前記チップ実装部と電気的に短絡された前記陽極端子と陰極端子で構成されることを特徴とするLEDパッケージの製造方法。 - 前記金属部材を準備する段階で、
前記金属部材は、下面にキャリアがさらに付着した状態でプレスを利用したパンチング工程によって前記金属部材に一定の間隔で金属基板を形成することを特徴とする請求項1に記載のLEDパッケージの製造方法。 - また、前記金属基板を形成する段階の後には、前記金属基板のリードフレーム上にホールまたは溝が形成される段階をさらに含むことを特徴とする請求項1に記載のLEDパッケージの製造方法。
- 前記金属基板のチップ実装部の上面には、中央部にLEDチップが保持され、前記チップ実装部上には1つまたは1つ以上のLEDチップが複数個配置されることを特徴とする請求項1に記載のLEDパッケージの製造方法。
- 前記モールディング部とレンズ部を形成する段階で、
前記モールディング部とレンズ部は、同一の材質の透明EMCを利用して前記金属基板の上部に同時に形成することを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 前記モールディング部とレンズ部は、
前記金属基板が形成されたストリップ形態の前記金属部材上に前記レンズ部とモールディング部の反転形状が転写された金型を準備し、前記金型内に透明EMCを注入した後、前記透明EMCを硬化させることによって、前記モールディング部とレンズ部が一体に同時に形成されることを特徴とする請求項5に記載のLEDパッケージの製造方法。 - 前記モールディング部とレンズ部を形成する段階の後には、
前記モールディング部の各側面に光反射膜を形成する段階をさらに含むことを特徴とする請求項1に記載のLEDパッケージの製造方法。 - 前記光反射膜を形成する段階の後には、
前記金属基板の両側部に形成されたスクライブラインに沿って切断し、LEDパッケージを個別的に抽出する段階をさらに含むことを特徴とする請求項7に記載のLEDパッケージの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110103066A KR101168854B1 (ko) | 2011-10-10 | 2011-10-10 | Led 패키지의 제조방법 |
KR10-2011-0103066 | 2011-10-10 | ||
PCT/KR2012/005391 WO2013055014A1 (ko) | 2011-10-10 | 2012-07-06 | Led 패키지의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542618A JP2013542618A (ja) | 2013-11-21 |
JP5572767B2 true JP5572767B2 (ja) | 2014-08-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013538674A Active JP5572767B2 (ja) | 2011-10-10 | 2012-07-06 | Ledパッケージの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5572767B2 (ja) |
KR (1) | KR101168854B1 (ja) |
CN (1) | CN103168370B (ja) |
WO (1) | WO2013055014A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20140122031A (ko) * | 2013-04-09 | 2014-10-17 | 주식회사 굿엘이디 | Emc 수지와 형광물질이 일체로 몰딩되는 led 패키지 및 그 제조방법 |
CN106987145A (zh) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | 一种紫外led芯片的封装结构 |
CN112467010B (zh) * | 2020-11-13 | 2022-03-22 | 中山市聚明星电子有限公司 | 二极管封装工艺及封装二极管 |
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JP3447604B2 (ja) * | 1999-02-25 | 2003-09-16 | 株式会社シチズン電子 | 表面実装型発光ダイオード及びその製造方法 |
JP2001308387A (ja) * | 2000-04-24 | 2001-11-02 | Pic Corporation:Kk | 発光ダイオード |
TW507482B (en) * | 2000-06-09 | 2002-10-21 | Sanyo Electric Co | Light emitting device, its manufacturing process, and lighting device using such a light-emitting device |
JP2002198570A (ja) * | 2000-12-26 | 2002-07-12 | Toyoda Gosei Co Ltd | 固体光素子 |
JP2003008078A (ja) * | 2001-06-19 | 2003-01-10 | Sanken Electric Co Ltd | 表面実装型半導体発光装置 |
EP1620903B1 (en) * | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
US7081644B2 (en) * | 2004-02-06 | 2006-07-25 | Barnes Group Inc. | Overmolded lens on leadframe and method for overmolding lens on lead frame |
JP2006222454A (ja) * | 2006-05-01 | 2006-08-24 | Toshiba Electronic Engineering Corp | 半導体発光装置および表面実装型パッケージ |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
JP4205135B2 (ja) * | 2007-03-13 | 2009-01-07 | シャープ株式会社 | 半導体発光装置、半導体発光装置用多連リードフレーム |
KR100874882B1 (ko) * | 2007-06-15 | 2008-12-19 | 삼성전자주식회사 | 반도체 스택 패키지 및 그의 제조 방법 |
CN201057438Y (zh) * | 2007-06-18 | 2008-05-07 | 佛山市国星光电股份有限公司 | 一种三基色片式发光二极管 |
JP2009188187A (ja) * | 2008-02-06 | 2009-08-20 | Sanyo Electric Co Ltd | 電子部品及びその製造方法 |
JP2010103243A (ja) * | 2008-10-22 | 2010-05-06 | Meio Kasei:Kk | Ledパッケージ用リードフレーム及びその製造法 |
KR101121728B1 (ko) * | 2008-06-26 | 2012-03-23 | 서울반도체 주식회사 | 방열 구조를 갖는 led 패키지 |
KR101122059B1 (ko) * | 2008-07-16 | 2012-03-14 | 주식회사 이츠웰 | 표면 실장형 엘이디 패키지와 이를 이용한 백 라이트 유닛 |
JP2010097982A (ja) * | 2008-10-14 | 2010-04-30 | Sanyo Electric Co Ltd | 発光装置 |
KR101078028B1 (ko) * | 2009-06-10 | 2011-10-31 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지용 리드 프레임 |
JP2011049325A (ja) | 2009-08-26 | 2011-03-10 | Seiko Instruments Inc | 発光部品及びその製造方法 |
-
2011
- 2011-10-10 KR KR1020110103066A patent/KR101168854B1/ko active IP Right Grant
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2012
- 2012-07-06 JP JP2013538674A patent/JP5572767B2/ja active Active
- 2012-07-06 WO PCT/KR2012/005391 patent/WO2013055014A1/ko active Application Filing
- 2012-07-06 CN CN201280002788.9A patent/CN103168370B/zh active Active
Also Published As
Publication number | Publication date |
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CN103168370A (zh) | 2013-06-19 |
KR101168854B1 (ko) | 2012-07-26 |
WO2013055014A1 (ko) | 2013-04-18 |
CN103168370B (zh) | 2016-09-07 |
JP2013542618A (ja) | 2013-11-21 |
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