JP5559369B2 - センサおよびセンサの製造方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0081—Thermal properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
DE 101 14 036 A1にはマイクロ構造化されたセンサが開示されており、このセンサにおいては半導体基板に開口部が設けられ、この開口部はその後の熱処理の際に、ダイアフラムのカバーで閉じられ、その下方において中空室に変わる。これによって容量性の圧力センサを形成することができ、基板内の中空室は2つのドーピング領域間に形成され、これらのドーピング領域はプレートコンデンサを形成し、このプレートコンデンサのキャパシタンスはドーピング領域の間隔に依存する。ドーピング領域は深さコンタクトを介して相応の評価回路と接続されている。
Claims (6)
- 電気的な特性の値が温度に依存して変化する、ダイオードピクセルとしてマイクロ構造化された少なくとも1つのセンサ素子(52)を有するセンサ(120)を製造する方法において、
a)基板(1)の上面または前記基板(1)の上に形成されている層上に格子状の構造部(14)を形成するステップと、
b)前記格子状の構造部(14)の下方における第1の領域(12)の電気化学的なエッチングにより多孔性の材料または自由空間を形成するステップと、
c)エピタキシャル層(24)を前記基板(1)上または該基板(1)を覆う層上に被着させ、前記エピタキシャル層(24)を前記格子状の構造部(14)の面全体にわたり形成し、前記第1の領域(12)が前記格子状の構造部(14)の下方において空洞(26,74,94)を形成するステップと、
d)前記少なくとも1つのセンサ素子(52)を前記エピタキシャル層(24)の内部または上部に形成するステップと、
e)前記エピタキシャル層(24)の構造化の前または途中または後に、前記エピタキシャル層列(24)に少なくとも1つの誘電層(36)を被着させるステップと、
f)1つまたは複数の導電性の層(48)に形成された線路(60,62)を介して前記センサ素子(52)を接触させるステップと、
g)前記少なくとも1つの誘電層(36)および前記エピタキシャル層(24)を通る各空洞(26,74,94)までのエッチング路(66)を露出させ、前記線路(60,62)が前記誘電層(36)の残存する領域上に延在するよう前記少なくとも1つの誘電層(36)を構造化するステップと、
h)前記エピタキシャル層(24)の犠牲層をエッチングし、前記少なくとも1つのセンサ素子(52)の周囲に前記少なくとも1つの誘電層(36)をダイアフラムとして露出させるステップとを有することを特徴とする、センサを製造する方法。 - ステップa)において先ず、前記第1の領域(12)を包囲する、該第1の領域(12)の導電型とは異なる導電型の第2の領域(18)を形成し、
ステップb)において、前記第2の領域(18)を横方向における境界部として維持しながら、前記第1の領域(12)を電解的なエッチングプロセスにより多孔化するか、完全に除去し、
前記第1の領域(12)がステップb)において多孔化し、且つ完全には除去しない場合には、ステップc)において前記第1の領域(12)を熱処理し、前記エピタキシャル層(24)の下方に空洞(26,94)を形成する、請求項1記載の方法。 - 前記少なくとも1つの誘電層(36)を酸化物として前記エピタキシャル層(24)上に形成し、
前記少なくとも1つの誘電層(36)において、後にダイアフラム(36.1)になる領域内に機械的な安定性を高めるための比較的厚い補強部(38)を局所的な酸化により形成する、請求項1または2記載の方法。 - 前記補強部(38)を前記センサ素子(52)の横方向の端部、および/または、前記センサ素子(52)を包囲するランドの横方向の端部、および/または、前記センサ素子(52)を包囲し、ウェブからなる格子の横方向の端部の周囲に形成する、請求項3記載の方法。
- さらに、前記基板(1)の裏面(76)側から、前記エピタキシャル層(24)の下方に形成された空洞(26,94)までの空洞(74)を形成する、請求項1から4までのいずれか1項記載の方法。
- センサ(120)の回路領域(3)内に1つまたは複数の構成素子(44)を形成し、検出領域(2)のセンサ素子(52)を形成する処理のうちの少なくとも幾つかの処理を前記回路領域(3)の形成にも使用する、請求項1から4までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006028435A DE102006028435A1 (de) | 2006-06-21 | 2006-06-21 | Sensor und Verfahren zu seiner Herstellung |
DE102006028435.6 | 2006-06-21 |
Related Parent Applications (1)
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JP2009515793A Division JP2009541978A (ja) | 2006-06-21 | 2007-04-23 | センサおよびセンサの製造方法 |
Publications (2)
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JP2013151057A JP2013151057A (ja) | 2013-08-08 |
JP5559369B2 true JP5559369B2 (ja) | 2014-07-23 |
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JP2009515793A Pending JP2009541978A (ja) | 2006-06-21 | 2007-04-23 | センサおよびセンサの製造方法 |
JP2013010529A Expired - Fee Related JP5559369B2 (ja) | 2006-06-21 | 2013-01-23 | センサおよびセンサの製造方法 |
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JP2009515793A Pending JP2009541978A (ja) | 2006-06-21 | 2007-04-23 | センサおよびセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8749013B2 (ja) |
EP (1) | EP2035326B1 (ja) |
JP (2) | JP2009541978A (ja) |
DE (1) | DE102006028435A1 (ja) |
WO (1) | WO2007147663A1 (ja) |
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DE102008002332B4 (de) * | 2008-06-10 | 2017-02-09 | Robert Bosch Gmbh | Verfahren zur Herstellung einer mikromechanischen Membranstruktur mit Zugang von der Substratrückseite |
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DE102008041587B4 (de) | 2008-08-27 | 2017-07-20 | Robert Bosch Gmbh | Mikrostrukturiertes Temperatursensorelement mit zusätzlicher IR-absorbierender Schicht |
DE102008041750A1 (de) * | 2008-09-02 | 2010-03-18 | Robert Bosch Gmbh | Thermisch entkoppeltes mikrostrukturiertes Referenzelement für Sensoren |
DE102008054481B4 (de) | 2008-12-10 | 2021-11-25 | Robert Bosch Gmbh | Sensor und Verfahren zu dessen Herstellung |
JP5687202B2 (ja) * | 2009-11-04 | 2015-03-18 | ローム株式会社 | 圧力センサおよび圧力センサの製造方法 |
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2006
- 2006-06-21 DE DE102006028435A patent/DE102006028435A1/de not_active Withdrawn
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2007
- 2007-04-23 US US12/302,677 patent/US8749013B2/en active Active
- 2007-04-23 EP EP07728389A patent/EP2035326B1/de not_active Expired - Fee Related
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Publication number | Publication date |
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US20110002359A1 (en) | 2011-01-06 |
JP2009541978A (ja) | 2009-11-26 |
EP2035326A1 (de) | 2009-03-18 |
EP2035326B1 (de) | 2011-06-15 |
WO2007147663A1 (de) | 2007-12-27 |
JP2013151057A (ja) | 2013-08-08 |
DE102006028435A1 (de) | 2007-12-27 |
US8749013B2 (en) | 2014-06-10 |
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