JP5557354B2 - 寄生容量により誘導される誤差が減少されたセンサデバイス - Google Patents

寄生容量により誘導される誤差が減少されたセンサデバイス Download PDF

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JP5557354B2
JP5557354B2 JP2012504695A JP2012504695A JP5557354B2 JP 5557354 B2 JP5557354 B2 JP 5557354B2 JP 2012504695 A JP2012504695 A JP 2012504695A JP 2012504695 A JP2012504695 A JP 2012504695A JP 5557354 B2 JP5557354 B2 JP 5557354B2
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node
capacitive
parasitic
drive
capacitance
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JP2012523565A5 (enExample
JP2012523565A (ja
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イー． ビアン、デイビッド
ミジュスコビック、デジャン
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NXP USA Inc
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NXP USA Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage

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  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Networks Using Active Elements (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2012504695A 2009-04-09 2010-03-23 寄生容量により誘導される誤差が減少されたセンサデバイス Active JP5557354B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/421,513 2009-04-09
US12/421,513 US8096179B2 (en) 2009-04-09 2009-04-09 Sensor device with reduced parasitic-induced error
PCT/US2010/028282 WO2010117615A2 (en) 2009-04-09 2010-03-23 Sensor device with reduced parasitic-induced error

Publications (3)

Publication Number Publication Date
JP2012523565A JP2012523565A (ja) 2012-10-04
JP2012523565A5 JP2012523565A5 (enExample) 2013-05-09
JP5557354B2 true JP5557354B2 (ja) 2014-07-23

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JP2012504695A Active JP5557354B2 (ja) 2009-04-09 2010-03-23 寄生容量により誘導される誤差が減少されたセンサデバイス

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Country Link
US (1) US8096179B2 (enExample)
EP (1) EP2417054B1 (enExample)
JP (1) JP5557354B2 (enExample)
CN (1) CN102365229B (enExample)
TW (1) TWI502885B (enExample)
WO (1) WO2010117615A2 (enExample)

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US8714012B2 (en) * 2010-02-16 2014-05-06 Stmicroelectronics S.R.L. Microelectromechanical gyroscope with inversion of actuation forces, and method for actuating a microelectromechanical gyroscope
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TWI416070B (zh) 2011-12-26 2013-11-21 Ind Tech Res Inst 陀螺儀的讀取電路
US9562767B2 (en) 2014-08-12 2017-02-07 Honeywell International Inc. Systems and methods for improving MEMS gyroscope start time
JP6413462B2 (ja) 2014-08-15 2018-10-31 セイコーエプソン株式会社 物理量センサー、物理量センサー装置、電子機器および移動体
US10317252B2 (en) 2015-04-20 2019-06-11 Infineon Technologies Ag System and method for a capacitive sensor
KR101880911B1 (ko) * 2017-02-21 2018-07-23 한국기술교육대학교 산학협력단 정전 용량형 mems 공진기
CN106993355A (zh) * 2017-04-06 2017-07-28 深圳格林绿梵生能源股份有限公司 一种基于均衡电容的多路反激led驱动器
FR3079026B1 (fr) * 2018-03-15 2021-01-01 Sysnav Procede de calibration d'un gyrometre equipant un vehicule
JP7119478B2 (ja) 2018-03-23 2022-08-17 セイコーエプソン株式会社 回路装置、物理量測定装置、電子機器及び移動体
US11820649B2 (en) 2018-05-18 2023-11-21 Lawrence Livermore National Security, Llc Position sensing circuit for an electrostatically driven MEMS device
US20190352174A1 (en) * 2018-05-18 2019-11-21 Lawrence Livermore National Security, Llc Position sensing circuit for an electronically driven mems device
US11119606B2 (en) * 2019-08-20 2021-09-14 Synaptics Incorporated Background capacitance compensation
CN112782427A (zh) * 2019-11-07 2021-05-11 霍尼韦尔国际公司 用于避免振梁加速度计的电容馈通的谐振器电极配置
FR3108897B1 (fr) * 2020-04-03 2022-04-08 Commissariat Energie Atomique Procédé de commande d’un capteur
WO2022183030A1 (en) * 2021-02-26 2022-09-01 Lawrence Livermore National Security, Llc Position sensing circuit for an electrostatically driven mems device
IT202100024644A1 (it) 2021-09-27 2023-03-27 St Microelectronics Srl Circuito di controllo di un giroscopio mems, giroscopio mems e metodo di controllo

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JP3489390B2 (ja) * 1997-04-28 2004-01-19 株式会社村田製作所 角速度センサ装置
US6233441B1 (en) * 1998-05-29 2001-05-15 Silicon Laboratories, Inc. Method and apparatus for generating a discretely variable capacitance for synthesizing high-frequency signals for wireless communications
JP2000081335A (ja) * 1998-09-07 2000-03-21 Denso Corp ヨーレートセンサ
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Also Published As

Publication number Publication date
US20100259318A1 (en) 2010-10-14
WO2010117615A2 (en) 2010-10-14
CN102365229B (zh) 2015-03-25
JP2012523565A (ja) 2012-10-04
TWI502885B (zh) 2015-10-01
EP2417054A2 (en) 2012-02-15
CN102365229A (zh) 2012-02-29
TW201101682A (en) 2011-01-01
EP2417054B1 (en) 2019-10-02
EP2417054A4 (en) 2015-07-01
WO2010117615A3 (en) 2011-01-13
US8096179B2 (en) 2012-01-17

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