CN102365229B - 具有减小的寄生引发的误差的传感器装置 - Google Patents

具有减小的寄生引发的误差的传感器装置 Download PDF

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Publication number
CN102365229B
CN102365229B CN201080015418.XA CN201080015418A CN102365229B CN 102365229 B CN102365229 B CN 102365229B CN 201080015418 A CN201080015418 A CN 201080015418A CN 102365229 B CN102365229 B CN 102365229B
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China
Prior art keywords
capacitance
network
node
driving node
parasitic
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Chinese (zh)
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CN102365229A (zh
Inventor
大卫·E·比恩
德扬·米尤什科维奇
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NXP USA Inc
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Freescale Semiconductor Inc
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5776Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage

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  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Networks Using Active Elements (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
CN201080015418.XA 2009-04-09 2010-03-23 具有减小的寄生引发的误差的传感器装置 Active CN102365229B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/421,513 2009-04-09
US12/421,513 US8096179B2 (en) 2009-04-09 2009-04-09 Sensor device with reduced parasitic-induced error
PCT/US2010/028282 WO2010117615A2 (en) 2009-04-09 2010-03-23 Sensor device with reduced parasitic-induced error

Publications (2)

Publication Number Publication Date
CN102365229A CN102365229A (zh) 2012-02-29
CN102365229B true CN102365229B (zh) 2015-03-25

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CN201080015418.XA Active CN102365229B (zh) 2009-04-09 2010-03-23 具有减小的寄生引发的误差的传感器装置

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Country Link
US (1) US8096179B2 (enExample)
EP (1) EP2417054B1 (enExample)
JP (1) JP5557354B2 (enExample)
CN (1) CN102365229B (enExample)
TW (1) TWI502885B (enExample)
WO (1) WO2010117615A2 (enExample)

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ITTO20110688A1 (it) * 2011-07-28 2013-01-29 St Microelectronics Srl Giroscopio microelettromeccanico con funzione di autocalibrazione e metodo di calibrazione di un giroscopio microelettromeccanico
TWI416070B (zh) 2011-12-26 2013-11-21 Ind Tech Res Inst 陀螺儀的讀取電路
US9562767B2 (en) 2014-08-12 2017-02-07 Honeywell International Inc. Systems and methods for improving MEMS gyroscope start time
JP6413462B2 (ja) 2014-08-15 2018-10-31 セイコーエプソン株式会社 物理量センサー、物理量センサー装置、電子機器および移動体
US10317252B2 (en) 2015-04-20 2019-06-11 Infineon Technologies Ag System and method for a capacitive sensor
KR101880911B1 (ko) * 2017-02-21 2018-07-23 한국기술교육대학교 산학협력단 정전 용량형 mems 공진기
CN106993355A (zh) * 2017-04-06 2017-07-28 深圳格林绿梵生能源股份有限公司 一种基于均衡电容的多路反激led驱动器
FR3079026B1 (fr) * 2018-03-15 2021-01-01 Sysnav Procede de calibration d'un gyrometre equipant un vehicule
JP7119478B2 (ja) 2018-03-23 2022-08-17 セイコーエプソン株式会社 回路装置、物理量測定装置、電子機器及び移動体
US11820649B2 (en) 2018-05-18 2023-11-21 Lawrence Livermore National Security, Llc Position sensing circuit for an electrostatically driven MEMS device
US20190352174A1 (en) * 2018-05-18 2019-11-21 Lawrence Livermore National Security, Llc Position sensing circuit for an electronically driven mems device
US11119606B2 (en) * 2019-08-20 2021-09-14 Synaptics Incorporated Background capacitance compensation
CN112782427A (zh) * 2019-11-07 2021-05-11 霍尼韦尔国际公司 用于避免振梁加速度计的电容馈通的谐振器电极配置
FR3108897B1 (fr) * 2020-04-03 2022-04-08 Commissariat Energie Atomique Procédé de commande d’un capteur
WO2022183030A1 (en) * 2021-02-26 2022-09-01 Lawrence Livermore National Security, Llc Position sensing circuit for an electrostatically driven mems device
IT202100024644A1 (it) 2021-09-27 2023-03-27 St Microelectronics Srl Circuito di controllo di un giroscopio mems, giroscopio mems e metodo di controllo

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US6549764B2 (en) * 1998-05-29 2003-04-15 Silicon Laboratories Inc. Method and apparatus for selecting capacitance amounts to vary the output frequency of a controlled oscillator
US6715353B2 (en) * 2002-04-25 2004-04-06 Honeywell International, Inc. MEMS gyroscope with parametric gain
CN1991313A (zh) * 2005-11-29 2007-07-04 St微电子公司 使用差分电容型传感器的检测电路
US7240533B2 (en) * 2004-02-04 2007-07-10 Bae Systems Plc Method for reducing bias error in a vibrating structure gyroscope
CN101142489A (zh) * 2005-04-01 2008-03-12 飞思卡尔半导体公司 用于电流感测的设备
CN101329190A (zh) * 2008-07-22 2008-12-24 上海电力学院 Mems器件微流量流速检测中寄生电容干扰信号的抑制方法

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Publication number Priority date Publication date Assignee Title
CN1141429A (zh) * 1995-01-11 1997-01-29 富川义朗 静电型传感器装置中减少电容分量的回路
US6549764B2 (en) * 1998-05-29 2003-04-15 Silicon Laboratories Inc. Method and apparatus for selecting capacitance amounts to vary the output frequency of a controlled oscillator
US6715353B2 (en) * 2002-04-25 2004-04-06 Honeywell International, Inc. MEMS gyroscope with parametric gain
US7240533B2 (en) * 2004-02-04 2007-07-10 Bae Systems Plc Method for reducing bias error in a vibrating structure gyroscope
CN101142489A (zh) * 2005-04-01 2008-03-12 飞思卡尔半导体公司 用于电流感测的设备
CN1991313A (zh) * 2005-11-29 2007-07-04 St微电子公司 使用差分电容型传感器的检测电路
CN101329190A (zh) * 2008-07-22 2008-12-24 上海电力学院 Mems器件微流量流速检测中寄生电容干扰信号的抑制方法

Also Published As

Publication number Publication date
US20100259318A1 (en) 2010-10-14
WO2010117615A2 (en) 2010-10-14
JP2012523565A (ja) 2012-10-04
TWI502885B (zh) 2015-10-01
EP2417054A2 (en) 2012-02-15
CN102365229A (zh) 2012-02-29
TW201101682A (en) 2011-01-01
EP2417054B1 (en) 2019-10-02
EP2417054A4 (en) 2015-07-01
WO2010117615A3 (en) 2011-01-13
US8096179B2 (en) 2012-01-17
JP5557354B2 (ja) 2014-07-23

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Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.