JP5553327B2 - 薄膜トランジスタの製造方法及びその製造方法により得られた薄膜トランジスタを有する有機発光素子表示装置 - Google Patents
薄膜トランジスタの製造方法及びその製造方法により得られた薄膜トランジスタを有する有機発光素子表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims description 69
- 239000013078 crystal Substances 0.000 claims description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 238000002955 isolation Methods 0.000 claims description 28
- 238000002425 crystallisation Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 230000008025 crystallization Effects 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005224 laser annealing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 103
- 229920001621 AMOLED Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005499 laser crystallization Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- 230000000007 visual effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
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- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Thin Film Transistor (AREA)
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- Recrystallisation Techniques (AREA)
Description
図1は、アクティブマトリックス有機発光素子 (AMOLED) 表示装置110の概略的に示す電気回路構造図である。AMOLED表示装置110は、制御回路140と、データライン駆動回路160と、スキャンライン駆動回路180と、表示パネル200とからなる。表示パネル200は複数のサブ画素210を有する、各画素210は一つのデータライン (d1乃至dn) 165と一つのスキャンライン (S1乃至Sn) 187に連結されて、マトリックスを構成する。サブ画素210は、データライン165とスキャンライン187を介して、データライン駆動回路160の画像データ信号及びスキャンライン駆動回路180のスイッチ/アドレッシング信号を受信する。データライン駆動回路160及びスキャンライン駆動回路180は制御回路140により制御される。
図3は本発明の方法における第1工程を示す。ガラス等の透光材料で構成される基板層10を提供する。基板層10の上にはバッファー層が形成されており、本実施形態において、該バッファー層は、窒素化物(例えば、窒素化硅)としてなる窒素化層21と酸化物 (例えば、酸化シリコン等)としてなる酸化層23からなる。該バッファー層の上は、形成非晶質シリコン層が形成されており、該非晶質シリコン層は第1結晶化工程によって第1多結晶シリコン層30になる。該第1結晶化工程は高出力レーザー結晶化工程であり、標準レーザー結晶法と呼ばれる、例えばエキシマレーザーアニール (Excimer Laser Anneal;ELA) 法を採用することも出来る。
図10に示すように、図9の構造上に第1保護層70と第2保護層80を形成し、且つ何れの適当な方法により電極92、94、96を形成する。該第1保護層70の材料は窒素化物であっても良いし、該第2保護層80の材料は酸化物であってもよい。
なお、一般的に、標準レーザーと低出力レーザーとの結晶法により生じた晶粒大小の平均差異が500オングストレーム以上も可能である。
21 窒素化層
23 酸化層
30 第1多結晶シリコン層
34 アクティブ部
34a、34a’ ドレーン電極領域
34b チャネル領域
34c、34c’ ソース電極領域
36 アクティブ部
36a ドレーン電極領域
36b チャネル領域
36c ソース電極領域
36d、36e LDD領域
40 第1隔離層
45 第2隔離層
50 非晶質シリコン層
51 第2多結晶シリコン層
52 アクティブ部
52a ドレーン電極領域
52b チャネル領域
52c ソース電極領域
62、64、66 ゲート電極
70 第1保護層
80 第2保護層
85 中間層
92、94、96 電極
100 第1平坦層
101 接触孔
103 正極
105 第2平坦層
110 表示装置
140 制御回路
160 データライン駆動回路
165 データライン
180 スキャンライン駆動回路
187 スキャンライン
200 表示パネル
210 サブ画素
212 発光素子
214 駆動用薄膜トランジスタ
216 スイッチ用薄膜トランジスタ
218 キャパシター
600 電子装置
700 電源供応装置
Claims (8)
- 外部電気回路と発光素子を有する複数のサブ画素を有する有機発光素子表示装置の薄膜トランジスタの製造方法であって、
第1領域と第2領域を有する基板層を提供する段階と、
該基板層にバッファー層を形成する段階と、
エキシマレーザーアニール法である第1結晶化工程により該バッファー層に第1多結晶シリコン層を形成する段階と、
該第1多結晶シリコン層をパターニングして、該第1領域に第1薄膜トランジスタのアクティブ部を形成する段階と、
第1隔離層を形成する段階と、
非レーザー結晶法である第2結晶化工程により該第1隔離層に該第1多結晶シリコン層とは違う結晶構造を有する第2多結晶シリコン層を形成する段階と、
該第2多結晶シリコン層をパターニングして、該第2領域に第2薄膜トランジスタのアクティブ部を形成する段階と、
第2隔離層を形成する段階と、
該第2隔離層に第1薄膜トランジスタと第2薄膜トランジスタとのゲート電極を形成する段階とを有し、
該第1多結晶シリコン層は、該第2多結晶シリコン層の結晶構造より規則状を示している結晶構造を有することを特徴とする有機発光素子の薄膜トランジスタの製造方法。 - 該第1薄膜トランジスタは外部電気回路に使用される外部電気回路薄膜トランジスタと、サブ画素の状態を切替えるスイッチ用薄膜トランジスタからなり、該第2薄膜トランジスタは発光素子を駆動する駆動用薄膜トランジスタを含むことを特徴とする請求項1に記載の有機発光素子表示装置の薄膜トランジスタの製造方法。
- 該第1多結晶シリコン層は樹状結晶構造を備えず、該第2多結晶シリコン層は樹状結晶構造を備えることを特徴とする請求項1に記載の有機発光素子表示装置の薄膜トランジスタの製造方法。
- 外部電気回路と発光素子を有する複数のサブ画素を有する有機発光素子表示装置であって、第1領域と第2領域を有する基板層と、該基板層の該第1領域に形成され、該基板層に形成された第1バッファー層と、第1多結晶シリコン層に形成されたアクティブ部は該バッファー層に設けられ、第1ゲート電極絶縁層はアクティブ部をカバーし、第1ゲート電極は該第1ゲート電極絶縁層に設けられる第1薄膜トランジスタと、該基板層の該第2領域に形成され、該基板層に形成された第2バッファー層と、第2多結晶シリコン層に形成されたアクティブ部は該バッファー層に設けられ、第2ゲート電極絶縁層はアクティブ部をカバーし、第2ゲート電極は該第2ゲート電極絶縁層に設けられる第2薄膜トランジスタと、を含み、
該第1多結晶シリコン層と該第2多結晶シリコン層とは違う結晶特性及び違う結晶構造を有し、該第1多結晶シリコン層は該第2多結晶シリコン層の結晶構造より規則状を示している結晶構造を有し、該第1多結晶シリコン層は樹状結晶構造を備えず、該第2多結晶シリコン層は樹状結晶構造を備え、且つ該第1ゲート電極絶縁層と該第2ゲート電極絶縁層は違う厚さを有することを特徴とする有機発光素子表示装置。 - 該第1薄膜トランジスタは外部電気回路に使用される外部電気回路薄膜トランジスタと、サブ画素の状態を切替えるスイッチ用薄膜トランジスタからなり、該第2薄膜トランジスタは発光素子を駆動する駆動用薄膜トランジスタを含むことを特徴とする請求項4に記載の有機発光素子表示装置。
- 該第1多結晶シリコン層と該第2多結晶シリコン層とは違う結晶粒径を有することを特徴とする請求項4に記載の有機発光素子表示装置。
- 該第1多結晶シリコン層と該第2多結晶シリコン層の結晶粒径の平均差が500オングストレーム以上であることを特徴とする請求項4に記載の有機発光素子表示装置。
- 請求項4に記載の有機発光素子表示装置を有する電子装置において、該有機発光素子は該電子装置の一部分になり、該電子装置は、該有機発光素子表示装置と電気的に連結して電源を提供する電源供応装置を有し、携帯電話、ディジタルカメラ、PDA、ノートブック、コンピュータ、テレビ、GPS、車用表示装置或いは携帯式DVDプレーヤーであることを特徴とする電子装置。
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US1204207P | 2007-12-06 | 2007-12-06 | |
US61/012,042 | 2007-12-06 | ||
TW97114510A TWI375282B (en) | 2007-12-06 | 2008-04-21 | Thin film transistor(tft)manufacturing method and oled display having tft manufactured by the same |
TW097114510 | 2008-04-21 |
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TWI423435B (zh) * | 2009-01-16 | 2014-01-11 | Innolux Corp | 影像顯示系統及其製造方法 |
TWI380438B (en) * | 2009-04-22 | 2012-12-21 | Tpo Displays Corp | System for display images and fabrication method thereof |
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