JP5537957B2 - アルミニウムの表面処理方法 - Google Patents
アルミニウムの表面処理方法 Download PDFInfo
- Publication number
- JP5537957B2 JP5537957B2 JP2010001965A JP2010001965A JP5537957B2 JP 5537957 B2 JP5537957 B2 JP 5537957B2 JP 2010001965 A JP2010001965 A JP 2010001965A JP 2010001965 A JP2010001965 A JP 2010001965A JP 5537957 B2 JP5537957 B2 JP 5537957B2
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- JP
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- Prior art keywords
- aluminum
- treatment
- ozone
- ozone gas
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052782 aluminium Inorganic materials 0.000 title claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 12
- 238000004381 surface treatment Methods 0.000 title claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 238000007743 anodising Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018131 Al-Mn Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
- 229910018461 Al—Mn Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018571 Al—Zn—Mg Inorganic materials 0.000 description 1
- 229910018569 Al—Zn—Mg—Cu Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Chemical Treatment Of Metals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
Claims (1)
- バリア型アノード酸化処理を施したアルミニウム又はアルミニウム合金からなる母材にオゾンガス濃度5〜30vol %のオゾンガスを流通暴露し、アルミニウム表面をさらにオゾンガスによる酸化処理をするようにしたことを特徴とするアルミニウムの表面処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010001965A JP5537957B2 (ja) | 2010-01-07 | 2010-01-07 | アルミニウムの表面処理方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2010001965A JP5537957B2 (ja) | 2010-01-07 | 2010-01-07 | アルミニウムの表面処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011140692A JP2011140692A (ja) | 2011-07-21 |
JP5537957B2 true JP5537957B2 (ja) | 2014-07-02 |
Family
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JP2010001965A Active JP5537957B2 (ja) | 2010-01-07 | 2010-01-07 | アルミニウムの表面処理方法 |
Country Status (1)
Country | Link |
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JP (1) | JP5537957B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6936714B2 (ja) * | 2017-11-30 | 2021-09-22 | 岩谷産業株式会社 | 被処理対象物の内壁面の処理方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3495806B2 (ja) * | 1994-01-17 | 2004-02-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP2006173413A (ja) * | 2004-12-16 | 2006-06-29 | Ulvac Japan Ltd | 薄膜形成装置 |
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2010
- 2010-01-07 JP JP2010001965A patent/JP5537957B2/ja active Active
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JP2011140692A (ja) | 2011-07-21 |
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