JP5527970B2 - 投影対物系の結像特性を改良する方法 - Google Patents

投影対物系の結像特性を改良する方法 Download PDF

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JP5527970B2
JP5527970B2 JP2008512758A JP2008512758A JP5527970B2 JP 5527970 B2 JP5527970 B2 JP 5527970B2 JP 2008512758 A JP2008512758 A JP 2008512758A JP 2008512758 A JP2008512758 A JP 2008512758A JP 5527970 B2 JP5527970 B2 JP 5527970B2
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lens
lenses
ratio
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projection objective
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JP2008546007A5 (enrdf_load_stackoverflow
JP2008546007A (ja
Inventor
コンラディ，オーラフ
フェルトマン，ハイコ
リヒター，ゲラルド
ブライディシュテール，サーシャ
フロムマイヤー，アンドレアス
グルーナー，トラルフ
フンメル，ヴォルフガング
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0081—Simple or compound lenses having one or more elements with analytic function to create variable power
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008512758A 2005-05-27 2006-05-24 投影対物系の結像特性を改良する方法 Active JP5527970B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68571605P 2005-05-27 2005-05-27
US60/685,716 2005-05-27
PCT/EP2006/004929 WO2006125617A2 (en) 2005-05-27 2006-05-24 Method for improving the imaging properties of a projection objective, and such a projection objective

Publications (3)

Publication Number Publication Date
JP2008546007A JP2008546007A (ja) 2008-12-18
JP2008546007A5 JP2008546007A5 (enrdf_load_stackoverflow) 2012-08-02
JP5527970B2 true JP5527970B2 (ja) 2014-06-25

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JP2008512758A Active JP5527970B2 (ja) 2005-05-27 2006-05-24 投影対物系の結像特性を改良する方法

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US (3) US7777963B2 (enrdf_load_stackoverflow)
EP (1) EP1883861B1 (enrdf_load_stackoverflow)
JP (1) JP5527970B2 (enrdf_load_stackoverflow)
KR (1) KR101346402B1 (enrdf_load_stackoverflow)
TW (1) TWI454731B (enrdf_load_stackoverflow)
WO (1) WO2006125617A2 (enrdf_load_stackoverflow)

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TWI454731B (zh) 2005-05-27 2014-10-01 Zeiss Carl Smt Gmbh 用於改進投影物鏡的成像性質之方法以及該投影物鏡
WO2007017089A1 (en) 2005-07-25 2007-02-15 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
DE102006047666A1 (de) * 2006-09-28 2008-04-03 Carl Zeiss Smt Ag Projektionsobjektiv für eine Mikrolithographieanlage mit verbesserten Abbildungseigenschaften und Verfahren zum Verbessern der Abbildungseigenschaften des Projektionsobjektives
ATE554427T1 (de) 2007-01-22 2012-05-15 Zeiss Carl Smt Gmbh Verfahren zur verbesserung von bildgebungseigenschaften eines optischen systems und optisches system
US7929115B2 (en) 2007-06-01 2011-04-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus for microlithography
DE102007027200A1 (de) * 2007-06-13 2008-12-18 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
JP2009004509A (ja) * 2007-06-20 2009-01-08 Canon Inc 露光装置およびデバイス製造方法
DE102008001909A1 (de) 2007-07-11 2009-01-15 Carl Zeiss Smt Ag Kompensation von durch Linsenerwärmung hervorgerufener Bildfehler bei verdrehter Multipolbeleuchtung
DE102008021833B4 (de) * 2007-12-19 2010-04-22 Carl Zeiss Smt Ag Verfahren zur Einstellung einer Beleuchtungswinkelverteilung und gleichzeitig einer Intensitätsverteilung über ein in ein Bildfeld abzubildendes Objektfeld
JP5511199B2 (ja) * 2009-02-25 2014-06-04 キヤノン株式会社 投影光学系、露光装置、およびデバイス製造方法
JP5656682B2 (ja) * 2011-02-22 2015-01-21 キヤノン株式会社 反射屈折光学系及びそれを有する撮像装置
CN104537182B (zh) * 2015-01-05 2017-11-24 中国科学院光电技术研究所 一种透镜热变形对光学系统成像结果影响的分析方法
JP2017102273A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102274A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影方法、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP2017102275A (ja) * 2015-12-02 2017-06-08 株式会社ニコン 投影光学系、投影光学系の調整方法、露光装置、露光方法、およびデバイス製造方法
JP6744797B2 (ja) * 2016-10-07 2020-08-19 リコーインダストリアルソリューションズ株式会社 投射光学系および投射装置および撮像装置
DE102023204235A1 (de) 2023-05-08 2024-11-14 Carl Zeiss Smt Gmbh Lithographiesystem mit abspaltbaren Linsen

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Publication number Publication date
WO2006125617A3 (en) 2007-04-26
EP1883861A2 (en) 2008-02-06
US20100290024A1 (en) 2010-11-18
US20150293352A1 (en) 2015-10-15
KR20080038087A (ko) 2008-05-02
US7777963B2 (en) 2010-08-17
KR101346402B1 (ko) 2014-01-02
US20080310029A1 (en) 2008-12-18
US9069263B2 (en) 2015-06-30
EP1883861B1 (en) 2013-04-17
WO2006125617A2 (en) 2006-11-30
TWI454731B (zh) 2014-10-01
TW200710428A (en) 2007-03-16
JP2008546007A (ja) 2008-12-18
US9581813B2 (en) 2017-02-28

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