JP5523853B2 - 薄膜トランジスタの作製方法及び表示装置の作製方法 - Google Patents

薄膜トランジスタの作製方法及び表示装置の作製方法 Download PDF

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Publication number
JP5523853B2
JP5523853B2 JP2010015319A JP2010015319A JP5523853B2 JP 5523853 B2 JP5523853 B2 JP 5523853B2 JP 2010015319 A JP2010015319 A JP 2010015319A JP 2010015319 A JP2010015319 A JP 2010015319A JP 5523853 B2 JP5523853 B2 JP 5523853B2
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Prior art keywords
film
etching
conductive film
electrode layer
resist mask
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Japanese (ja)
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JP2010199570A5 (enExample
JP2010199570A (ja
Inventor
英臣 須沢
隆文 溝口
浩二 大力
真弓 三上
祐美子 齋藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2010199570A5 publication Critical patent/JP2010199570A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010015319A 2009-01-28 2010-01-27 薄膜トランジスタの作製方法及び表示装置の作製方法 Expired - Fee Related JP5523853B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010015319A JP5523853B2 (ja) 2009-01-28 2010-01-27 薄膜トランジスタの作製方法及び表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009016472 2009-01-28
JP2009016472 2009-01-28
JP2010015319A JP5523853B2 (ja) 2009-01-28 2010-01-27 薄膜トランジスタの作製方法及び表示装置の作製方法

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JP2010199570A JP2010199570A (ja) 2010-09-09
JP2010199570A5 JP2010199570A5 (enExample) 2013-02-28
JP5523853B2 true JP5523853B2 (ja) 2014-06-18

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US (1) US8207026B2 (enExample)
JP (1) JP5523853B2 (enExample)

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US8679986B2 (en) * 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI534905B (zh) * 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
US9728563B2 (en) * 2012-10-26 2017-08-08 Applied Materials, Inc. Combinatorial masking
TWI699739B (zh) * 2014-09-05 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置、驅動器ｉｃ、顯示裝置及電子裝置
KR20170140819A (ko) * 2016-06-13 2017-12-22 에스케이하이닉스 주식회사 전자 장치 및 제조 방법
CN107357077B (zh) * 2017-08-21 2020-03-13 京东方科技集团股份有限公司 光栅组件、显示装置及控制方法、存储介质
CN109088001B (zh) * 2018-09-14 2022-04-12 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法

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US8207026B2 (en) 2012-06-26
US20100187535A1 (en) 2010-07-29
JP2010199570A (ja) 2010-09-09

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