JP5522980B2 - 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 - Google Patents

固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 Download PDF

Info

Publication number
JP5522980B2
JP5522980B2 JP2009145445A JP2009145445A JP5522980B2 JP 5522980 B2 JP5522980 B2 JP 5522980B2 JP 2009145445 A JP2009145445 A JP 2009145445A JP 2009145445 A JP2009145445 A JP 2009145445A JP 5522980 B2 JP5522980 B2 JP 5522980B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
semiconductor region
region
conversion element
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009145445A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003716A (ja
JP2011003716A5 (enExample
Inventor
真人 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009145445A priority Critical patent/JP5522980B2/ja
Priority to US12/815,236 priority patent/US8363141B2/en
Publication of JP2011003716A publication Critical patent/JP2011003716A/ja
Publication of JP2011003716A5 publication Critical patent/JP2011003716A5/ja
Priority to US13/728,566 priority patent/US8872949B2/en
Application granted granted Critical
Publication of JP5522980B2 publication Critical patent/JP5522980B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009145445A 2009-06-18 2009-06-18 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 Expired - Fee Related JP5522980B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009145445A JP5522980B2 (ja) 2009-06-18 2009-06-18 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法
US12/815,236 US8363141B2 (en) 2009-06-18 2010-06-14 Solid-state image pickup device, image pickup system including the same, and method for manufacturing the same
US13/728,566 US8872949B2 (en) 2009-06-18 2012-12-27 Solid-state image pickup device, image pickup system including the same, and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009145445A JP5522980B2 (ja) 2009-06-18 2009-06-18 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013243273A Division JP5665951B2 (ja) 2013-11-25 2013-11-25 固体撮像装置、および固体撮像装置を用いた撮像システム

Publications (3)

Publication Number Publication Date
JP2011003716A JP2011003716A (ja) 2011-01-06
JP2011003716A5 JP2011003716A5 (enExample) 2012-10-11
JP5522980B2 true JP5522980B2 (ja) 2014-06-18

Family

ID=43353994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009145445A Expired - Fee Related JP5522980B2 (ja) 2009-06-18 2009-06-18 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法

Country Status (2)

Country Link
US (2) US8363141B2 (enExample)
JP (1) JP5522980B2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5283216B2 (ja) * 2008-07-31 2013-09-04 国立大学法人静岡大学 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置
JP5522980B2 (ja) 2009-06-18 2014-06-18 キヤノン株式会社 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法
JP5564918B2 (ja) * 2009-12-03 2014-08-06 ソニー株式会社 撮像素子およびカメラシステム
JP6004635B2 (ja) 2011-02-01 2016-10-12 キヤノン株式会社 半導体装置の製造方法
US8946795B2 (en) * 2011-03-17 2015-02-03 Omnivision Technologies, Inc. Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter
JP6066616B2 (ja) * 2012-08-10 2017-01-25 キヤノン株式会社 撮像装置および撮像システム
JP6066617B2 (ja) * 2012-08-10 2017-01-25 キヤノン株式会社 撮像装置および撮像システム
JP6194598B2 (ja) * 2013-02-28 2017-09-13 株式会社ニコン 撮像素子および撮像素子を備えた撮像装置
JP2015035450A (ja) * 2013-08-07 2015-02-19 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP6355311B2 (ja) * 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
JP6234173B2 (ja) * 2013-11-07 2017-11-22 ルネサスエレクトロニクス株式会社 固体撮像素子の製造方法
JP5665951B2 (ja) * 2013-11-25 2015-02-04 キヤノン株式会社 固体撮像装置、および固体撮像装置を用いた撮像システム
GB2524044B (en) * 2014-03-12 2019-03-27 Teledyne E2V Uk Ltd CMOS Image sensor
JP6387745B2 (ja) 2014-08-29 2018-09-12 セイコーエプソン株式会社 固体撮像装置及びその製造方法
JP2016181628A (ja) * 2015-03-24 2016-10-13 キヤノン株式会社 半導体装置の製造方法
US10727264B2 (en) * 2015-06-05 2020-07-28 Sony Corporation Imaging element, electronic device, manufacturing apparatus, and manufacturing method
JP2018107358A (ja) * 2016-12-27 2018-07-05 キヤノン株式会社 撮像装置の製造方法および撮像システム
US10838024B2 (en) * 2017-05-02 2020-11-17 California Institute Of Technology Self-calibrating solid-state magnetometer for vectorized field sensing via zero-field spin-dependent recombination
JP2017208574A (ja) * 2017-08-17 2017-11-24 株式会社ニコン 撮像素子および撮像素子を備えた撮像装置
KR102494604B1 (ko) * 2017-10-31 2023-02-02 삼성전자주식회사 이미지 센서
JP7250427B2 (ja) 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体
TWI692861B (zh) * 2019-03-14 2020-05-01 晶相光電股份有限公司 影像感測器及其製造方法
JP7652543B2 (ja) * 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4419238B2 (ja) * 1999-12-27 2010-02-24 ソニー株式会社 固体撮像素子及びその製造方法
JP2001297997A (ja) * 2000-04-17 2001-10-26 Sony Corp 半導体装置の製造方法
JP2002231924A (ja) 2001-01-30 2002-08-16 Sony Corp 固体撮像素子及びその製造方法
JP3702854B2 (ja) * 2002-03-06 2005-10-05 ソニー株式会社 固体撮像素子
JP2005166731A (ja) 2003-11-28 2005-06-23 Canon Inc 固体撮像装置
US7570292B2 (en) * 2004-03-19 2009-08-04 Fujifilm Corporation Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element
JP5110519B2 (ja) * 2005-08-30 2012-12-26 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
JP2007115787A (ja) * 2005-10-18 2007-05-10 Nikon Corp 固体撮像素子
JP5347283B2 (ja) * 2008-03-05 2013-11-20 ソニー株式会社 固体撮像装置およびその製造方法
JP5522980B2 (ja) 2009-06-18 2014-06-18 キヤノン株式会社 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法
JP2014049575A (ja) * 2012-08-30 2014-03-17 Sony Corp 撮像素子、撮像装置、製造装置および方法

Also Published As

Publication number Publication date
US20100321518A1 (en) 2010-12-23
US8872949B2 (en) 2014-10-28
JP2011003716A (ja) 2011-01-06
US20130113024A1 (en) 2013-05-09
US8363141B2 (en) 2013-01-29

Similar Documents

Publication Publication Date Title
JP5522980B2 (ja) 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法
JP5558857B2 (ja) 光電変換装置およびそれを用いた撮像システム
JP5441986B2 (ja) 固体撮像装置およびカメラ
JP5679653B2 (ja) 光電変換装置およびそれを用いた撮像システム
JP6179865B2 (ja) 固体撮像装置及びその製造方法
JP5230058B2 (ja) 固体撮像装置およびカメラ
US7943962B2 (en) Solid-state image pickup device and method for producing the same
US8803062B2 (en) Photoelectric conversion device having a light-shielding film
JP5723094B2 (ja) 固体撮像装置およびカメラ
JP5151371B2 (ja) 固体撮像装置並びにカメラ
JP2009253149A (ja) 光電変換装置及びそれを用いた撮像システム
US10103183B2 (en) Manufacturing method of imaging device and imaging system
JP5665951B2 (ja) 固体撮像装置、および固体撮像装置を用いた撮像システム
JP5701344B2 (ja) 光電変換装置及びそれを用いた撮像システム
JP2010219352A (ja) 光電変換装置の製造方法、光電変換装置、及び撮像システム
JP2015111728A (ja) 光電変換装置及びそれを用いた撮像システム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120615

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130919

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130924

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140217

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140311

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140408

LAPS Cancellation because of no payment of annual fees