JP5520646B2 - マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及び撮像装置 - Google Patents
マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及び撮像装置 Download PDFInfo
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- JP5520646B2 JP5520646B2 JP2010061620A JP2010061620A JP5520646B2 JP 5520646 B2 JP5520646 B2 JP 5520646B2 JP 2010061620 A JP2010061620 A JP 2010061620A JP 2010061620 A JP2010061620 A JP 2010061620A JP 5520646 B2 JP5520646 B2 JP 5520646B2
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- H01L27/144—Devices controlled by radiation
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/481—Disposition
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L27/144—Devices controlled by radiation
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H01L2924/181—Encapsulation
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
21 撮影レンズ
26 デジタル信号処理部
29 システム制御部
100 光電変換膜積層型固体撮像素子
101 撮像素子チップ
102 透明ガラス基板
103 回路基板
104 ワイヤ(接続線)
105 黒色の樹脂
110 半導体ウェハ
112 撮像領域
113 接続パッド
114 ダイシングブレード
115 支持基板
116 透明樹脂(接着材)
121 半導体基板
125 画素電極膜
130 光電変換膜
131 対向電極膜
132 保護膜
Claims (3)
- 回路基板と、該回路基板の光入射側表面に貼り付けられた半導体基板と、該半導体基板の光入射側上層に積層された光電変換膜と、前記半導体基板の表面部に形成され前記光電変換膜が入射光量に応じて検出した信号電荷量に応じた信号を撮像画像信号として外部に読み出す信号読出手段と、前記光電変換膜の光入射側上層に透明樹脂を接着材として貼り付けられた透明基板と、該透明基板で覆われていない前記半導体基板の周辺部に形成された接続パッドと前記回路基板の接続端子とをワイヤーボンディングされた接続線とを備えるマイクロレンズ非搭載の光電変換膜積層型固体撮像素子であって、前記半導体基板の側面を含み且つ前記接続線が設けられる空間に光学的に黒色の樹脂が充填され、前記樹脂の前記光入射側表面と前記透明基板の表面とが同一面に形成され、前記樹脂の前記光入射側表面に、該光電変換膜積層型固体撮像素子の受光面に結像する撮影レンズとの位置合わせ用の当接部が設けられるマイクロレンズ非搭載の光電変換膜積層型固体撮像素子。
- 請求項1に記載のマイクロレンズ非搭載の光電変換膜積層型固体撮像素子であって、前記樹脂が前記空間に充填されることで矩形体に成形されるマイクロレンズ非搭載の光電変換膜積層型固体撮像素子。
- 請求項1又は請求項2に記載のマイクロレンズ非搭載の光電変換膜積層型固体撮像素子を搭載し、該光電変換膜積層型固体撮像素子の前記樹脂の前記光入射側表面を用いて該光電変換膜積層型固体撮像素子の受光面に結像する撮影レンズを位置合わせした撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010061620A JP5520646B2 (ja) | 2010-03-17 | 2010-03-17 | マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及び撮像装置 |
US13/049,832 US20110227181A1 (en) | 2010-03-17 | 2011-03-16 | Photoelectric conversion film-stacked solid-state imaging device without microlenses, its manufacturing method, and imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010061620A JP5520646B2 (ja) | 2010-03-17 | 2010-03-17 | マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及び撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011198852A JP2011198852A (ja) | 2011-10-06 |
JP5520646B2 true JP5520646B2 (ja) | 2014-06-11 |
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JP2010061620A Active JP5520646B2 (ja) | 2010-03-17 | 2010-03-17 | マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及び撮像装置 |
Country Status (2)
Country | Link |
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US (1) | US20110227181A1 (ja) |
JP (1) | JP5520646B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9634059B2 (en) * | 2014-12-30 | 2017-04-25 | Semiconductor Components Industries, Llc | Methods of forming image sensor integrated circuit packages |
FR3046297B1 (fr) * | 2015-12-23 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique matriciel presentant une electrode superieure transparente |
WO2017208724A1 (ja) * | 2016-05-30 | 2017-12-07 | ミツミ電機株式会社 | 光学モジュール、モジュール及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102449A (ja) * | 1991-10-07 | 1993-04-23 | Sony Corp | 固体撮像装置およびその製造方法 |
JPH0621414A (ja) * | 1992-07-06 | 1994-01-28 | Sony Corp | 固体撮像装置とその製造方法 |
JP2004165191A (ja) * | 2002-11-08 | 2004-06-10 | Oki Electric Ind Co Ltd | 半導体装置、半導体装置の製造方法及びカメラシステム |
US6995462B2 (en) * | 2003-09-17 | 2006-02-07 | Micron Technology, Inc. | Image sensor packages |
US7570292B2 (en) * | 2004-03-19 | 2009-08-04 | Fujifilm Corporation | Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element |
JP2006100766A (ja) * | 2004-08-31 | 2006-04-13 | Fuji Photo Film Co Ltd | 光電変換素子、及び撮像素子、並びに、これらに電場を印加する方法。 |
JP4486005B2 (ja) * | 2005-08-03 | 2010-06-23 | パナソニック株式会社 | 半導体撮像装置およびその製造方法 |
JP4905762B2 (ja) * | 2005-08-23 | 2012-03-28 | 富士フイルム株式会社 | 光電変換素子、撮像素子、および該光電変換素子の製造方法 |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
JP4825538B2 (ja) * | 2006-02-17 | 2011-11-30 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP4825542B2 (ja) * | 2006-02-23 | 2011-11-30 | 富士フイルム株式会社 | 固体撮像素子の製造方法 |
JP2007311416A (ja) * | 2006-05-16 | 2007-11-29 | Fujifilm Corp | 固体撮像装置 |
JP4467551B2 (ja) * | 2006-09-22 | 2010-05-26 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP2008092417A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置および半導体撮像モジュール |
JP2008235686A (ja) * | 2007-03-22 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 光学デバイス、カメラモジュール、携帯電話、デジタルスチルカメラ、および医療用内視鏡スコープ |
-
2010
- 2010-03-17 JP JP2010061620A patent/JP5520646B2/ja active Active
-
2011
- 2011-03-16 US US13/049,832 patent/US20110227181A1/en not_active Abandoned
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Publication number | Publication date |
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US20110227181A1 (en) | 2011-09-22 |
JP2011198852A (ja) | 2011-10-06 |
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