JP5516960B2 - 固体撮像装置、固体撮像装置の駆動方法、および、電子機器 - Google Patents

固体撮像装置、固体撮像装置の駆動方法、および、電子機器 Download PDF

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JP5516960B2
JP5516960B2 JP2010085981A JP2010085981A JP5516960B2 JP 5516960 B2 JP5516960 B2 JP 5516960B2 JP 2010085981 A JP2010085981 A JP 2010085981A JP 2010085981 A JP2010085981 A JP 2010085981A JP 5516960 B2 JP5516960 B2 JP 5516960B2
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JP2011217315A5 (enExample
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圭司 馬渕
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010085981A 2010-04-02 2010-04-02 固体撮像装置、固体撮像装置の駆動方法、および、電子機器 Expired - Fee Related JP5516960B2 (ja)

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Application Number Priority Date Filing Date Title
JP2010085981A JP5516960B2 (ja) 2010-04-02 2010-04-02 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
CN201110074443.1A CN102215351B (zh) 2010-04-02 2011-03-25 固态成像装置，固态成像装置的驱动方法和电子设备
US13/071,707 US8902341B2 (en) 2010-04-02 2011-03-25 Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus

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JP2010085981A JP5516960B2 (ja) 2010-04-02 2010-04-02 固体撮像装置、固体撮像装置の駆動方法、および、電子機器

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JP2011217315A5 JP2011217315A5 (enExample) 2013-05-02
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CN102215351B (zh) 2016-08-24
CN102215351A (zh) 2011-10-12
JP2011217315A (ja) 2011-10-27
US20110242378A1 (en) 2011-10-06
US8902341B2 (en) 2014-12-02

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