JP5514548B2 - ナノ金属粒子担持方法及びナノ金属粒子担持基板 - Google Patents
ナノ金属粒子担持方法及びナノ金属粒子担持基板 Download PDFInfo
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- JP5514548B2 JP5514548B2 JP2009533181A JP2009533181A JP5514548B2 JP 5514548 B2 JP5514548 B2 JP 5514548B2 JP 2009533181 A JP2009533181 A JP 2009533181A JP 2009533181 A JP2009533181 A JP 2009533181A JP 5514548 B2 JP5514548 B2 JP 5514548B2
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- 239000000758 substrate Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 34
- 239000002923 metal particle Substances 0.000 title claims description 29
- 239000012530 fluid Substances 0.000 claims description 35
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 125000000524 functional group Chemical group 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 125000002883 imidazolyl group Chemical group 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- QPFYXYFORQJZEC-FOCLMDBBSA-N Phenazopyridine Chemical compound NC1=NC(N)=CC=C1\N=N\C1=CC=CC=C1 QPFYXYFORQJZEC-FOCLMDBBSA-N 0.000 claims 1
- 239000002608 ionic liquid Substances 0.000 claims 1
- 239000002082 metal nanoparticle Substances 0.000 claims 1
- 229940070891 pyridium Drugs 0.000 claims 1
- -1 azole compound Chemical class 0.000 description 23
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 1H-imidazole silane Chemical compound [SiH4].N1C=NC=C1 ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 0.000 description 5
- 229910014202 BMI-PF6 Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 150000003839 salts Chemical group 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 238000000635 electron micrograph Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 3
- AMKUSFIBHAUBIJ-UHFFFAOYSA-N 1-hexylpyridin-1-ium Chemical class CCCCCC[N+]1=CC=CC=C1 AMKUSFIBHAUBIJ-UHFFFAOYSA-N 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 3
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
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- 235000019441 ethanol Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- REACWASHYHDPSQ-UHFFFAOYSA-N 1-butylpyridin-1-ium Chemical class CCCC[N+]1=CC=CC=C1 REACWASHYHDPSQ-UHFFFAOYSA-N 0.000 description 2
- OIDIRWZVUWCCCO-UHFFFAOYSA-N 1-ethylpyridin-1-ium Chemical class CC[N+]1=CC=CC=C1 OIDIRWZVUWCCCO-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
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- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
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- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 2
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 1
- ODIRBFFBCSTPTO-UHFFFAOYSA-N 1,3-selenazole Chemical compound C1=C[se]C=N1 ODIRBFFBCSTPTO-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- TYOCDPIZUIQUSO-UHFFFAOYSA-N 1-butyl-2,3-dimethyl-2h-imidazole Chemical compound CCCCN1C=CN(C)C1C TYOCDPIZUIQUSO-UHFFFAOYSA-N 0.000 description 1
- KSOGGGZFEJTGPZ-UHFFFAOYSA-M 1-butyl-2,3-dimethylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCC[N+]=1C=CN(C)C=1C KSOGGGZFEJTGPZ-UHFFFAOYSA-M 0.000 description 1
- CYFFKUDZLZREEX-WNQIDUERSA-M 1-butyl-3-methylimidazol-3-ium;(2s)-2-hydroxypropanoate Chemical compound C[C@H](O)C([O-])=O.CCCC[N+]=1C=CN(C)C=1 CYFFKUDZLZREEX-WNQIDUERSA-M 0.000 description 1
- FHDQNOXQSTVAIC-UHFFFAOYSA-M 1-butyl-3-methylimidazol-3-ium;chloride Chemical compound [Cl-].CCCCN1C=C[N+](C)=C1 FHDQNOXQSTVAIC-UHFFFAOYSA-M 0.000 description 1
- FRZPYEHDSAQGAS-UHFFFAOYSA-M 1-butyl-3-methylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCC[N+]=1C=CN(C)C=1 FRZPYEHDSAQGAS-UHFFFAOYSA-M 0.000 description 1
- KVBQNFMTEUEOCD-UHFFFAOYSA-M 1-butylpyridin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1=CC=CC=C1 KVBQNFMTEUEOCD-UHFFFAOYSA-M 0.000 description 1
- POKOASTYJWUQJG-UHFFFAOYSA-M 1-butylpyridin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1=CC=CC=C1 POKOASTYJWUQJG-UHFFFAOYSA-M 0.000 description 1
- BEFWDPZVLOCGRP-UHFFFAOYSA-M 1-butylpyridin-1-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCC[N+]1=CC=CC=C1 BEFWDPZVLOCGRP-UHFFFAOYSA-M 0.000 description 1
- HTZVLLVRJHAJJF-UHFFFAOYSA-M 1-decyl-3-methylimidazolium chloride Chemical compound [Cl-].CCCCCCCCCCN1C=C[N+](C)=C1 HTZVLLVRJHAJJF-UHFFFAOYSA-M 0.000 description 1
- GITMVCYKHULLDM-UHFFFAOYSA-M 1-ethyl-2,3-dimethylimidazol-3-ium;bromide Chemical compound [Br-].CCN1C=C[N+](C)=C1C GITMVCYKHULLDM-UHFFFAOYSA-M 0.000 description 1
- NUJYCYLTUXYHQU-UHFFFAOYSA-M 1-ethyl-2,3-dimethylimidazol-3-ium;chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1C NUJYCYLTUXYHQU-UHFFFAOYSA-M 0.000 description 1
- GWQYPLXGJIXMMV-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCN1C=C[N+](C)=C1 GWQYPLXGJIXMMV-UHFFFAOYSA-M 0.000 description 1
- NJMWOUFKYKNWDW-UHFFFAOYSA-N 1-ethyl-3-methylimidazolium Chemical compound CCN1C=C[N+](C)=C1 NJMWOUFKYKNWDW-UHFFFAOYSA-N 0.000 description 1
- BMQZYMYBQZGEEY-UHFFFAOYSA-M 1-ethyl-3-methylimidazolium chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1 BMQZYMYBQZGEEY-UHFFFAOYSA-M 0.000 description 1
- ABFDKXBSQCTIKH-UHFFFAOYSA-M 1-ethylpyridin-1-ium;bromide Chemical compound [Br-].CC[N+]1=CC=CC=C1 ABFDKXBSQCTIKH-UHFFFAOYSA-M 0.000 description 1
- AMFMJCAPWCXUEI-UHFFFAOYSA-M 1-ethylpyridin-1-ium;chloride Chemical compound [Cl-].CC[N+]1=CC=CC=C1 AMFMJCAPWCXUEI-UHFFFAOYSA-M 0.000 description 1
- ZCPPLZJPPBIWRU-UHFFFAOYSA-M 1-hexadecyl-3-methylimidazol-3-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCN1C=C[N+](C)=C1 ZCPPLZJPPBIWRU-UHFFFAOYSA-M 0.000 description 1
- KTUDCAXDKIVTNY-UHFFFAOYSA-M 1-hexyl-2,3-dimethylimidazol-3-ium;bromide Chemical compound [Br-].CCCCCCN1C=C[N+](C)=C1C KTUDCAXDKIVTNY-UHFFFAOYSA-M 0.000 description 1
- NCTQEXWJEPRHLV-UHFFFAOYSA-M 1-hexyl-2,3-dimethylimidazol-3-ium;chloride Chemical compound [Cl-].CCCCCCN1C=C[N+](C)=C1C NCTQEXWJEPRHLV-UHFFFAOYSA-M 0.000 description 1
- WWTKHYARIDYUKG-UHFFFAOYSA-N 1-hexyl-2,3-dimethylimidazol-3-ium;trifluoroborane Chemical compound FB(F)F.CCCCCCN1C=C[N+](C)=C1C WWTKHYARIDYUKG-UHFFFAOYSA-N 0.000 description 1
- BQBJIBLQQWXKBH-UHFFFAOYSA-M 1-hexyl-2,3-dimethylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCCCC[N+]=1C=CN(C)C=1C BQBJIBLQQWXKBH-UHFFFAOYSA-M 0.000 description 1
- FQCUVKQMQDQSRX-UHFFFAOYSA-L 1-hexyl-3-methylimidazol-3-ium bromide chloride Chemical compound [Cl-].[Br-].CCCCCC[n+]1ccn(C)c1.CCCCCC[n+]1ccn(C)c1 FQCUVKQMQDQSRX-UHFFFAOYSA-L 0.000 description 1
- RABFGPMWVQNDHI-UHFFFAOYSA-M 1-hexyl-3-methylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCCCC[N+]=1C=CN(C)C=1 RABFGPMWVQNDHI-UHFFFAOYSA-M 0.000 description 1
- SZRSEFNUSHACPD-UHFFFAOYSA-M 1-hexylpyridin-1-ium;bromide Chemical compound [Br-].CCCCCC[N+]1=CC=CC=C1 SZRSEFNUSHACPD-UHFFFAOYSA-M 0.000 description 1
- JEOSMYVMLZTQOH-UHFFFAOYSA-M 1-hexylpyridin-1-ium;chloride Chemical compound [Cl-].CCCCCC[N+]1=CC=CC=C1 JEOSMYVMLZTQOH-UHFFFAOYSA-M 0.000 description 1
- QFAUKQKOJVLHEL-UHFFFAOYSA-M 1-hexylpyridin-1-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCCCC[N+]1=CC=CC=C1 QFAUKQKOJVLHEL-UHFFFAOYSA-M 0.000 description 1
- LCXGSWXECDJESI-UHFFFAOYSA-M 1-methyl-3-octadecylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCCN1C=C[N+](C)=C1 LCXGSWXECDJESI-UHFFFAOYSA-M 0.000 description 1
- SDXDXENAFAXVMX-UHFFFAOYSA-M 1-methyl-3-tetradecylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCN1C=C[N+](C)=C1 SDXDXENAFAXVMX-UHFFFAOYSA-M 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- JDIIGWSSTNUWGK-UHFFFAOYSA-N 1h-imidazol-3-ium;chloride Chemical compound [Cl-].[NH2+]1C=CN=C1 JDIIGWSSTNUWGK-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- OXFBEEDAZHXDHB-UHFFFAOYSA-M 3-methyl-1-octylimidazolium chloride Chemical compound [Cl-].CCCCCCCCN1C=C[N+](C)=C1 OXFBEEDAZHXDHB-UHFFFAOYSA-M 0.000 description 1
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Description
下記本発明は、この発見に基づき成されたものであり、
(1)基板上に一分子中に金属捕捉能を持つ官能基を少なくとも1個有するシランカップリング剤を塗布した後に、ナノ金属粒子と接触させることを特徴とするナノ金属粒子の担持方法。
(2)イオン性流体に覆われたナノ金属粒子を基材に接触することを特徴とする(1)記載のナノ金属粒子の担持方法。
(3)分子中に金属捕捉能を持つ官能基を有するシランカップリング剤がアゾール系化合物とエポキシシラン系化合物との反応により得られたシランカップリング剤である(1)又は(2)記載のナノ金属粒子の担持方法。
(4)金属捕捉能を持つ官能基がイミダゾール基、アミノ基、ジアミノ基、メルカプト基及びビニル基の群から選ばれた少なくとも一種である(1)〜(3)何れか1項記載のナノ金属粒子の担持方法。
(5)ナノ金属粒子の金属が金、白金、銀、銅、パラジウム、ニッケル、コバルト、ルテニウム、ロジウム、レニウム、マンガン、クロム、モリブデン、タングステン、ニオブ、タンタル、チタン、ジルコニウム、ハフニウム、亜鉛、カドミウム、アルミニウム、ガリウム、インジウム、スズ、シリコンの群から選ばれた少なくとも一種、又は二種以上を組み合わせた合金、又は、少なくとも一種を含む金属である(1)〜(4)いずれか1項記載のナノ金属粒子の担持方法。
(6)シランカップリング剤と接触するナノ金属粒子は、イオン性流体に覆われている(1)〜(5)いずれか1項記載の金属めっき方法。
(7)(1)〜(6)いずれか1項記載の方法を行って得られるナノ金属粒子が担持された基板。
シランカップリング剤は分子の一端に加水分解でシラノール基(Si−OH)を与えるエトキシ(又はメトキシ)基を有し、他端にアミノ基やグリシジル基等の有機官能基を有するものを言う。
アゾール系化合物とエポキシシラン系化合物との反応は、例えば特開平6−256358号公報に記載されている条件で行うことが出来る。例えば、80〜200℃でアゾール化合物1モルに対して0.1〜10モルのエポキシ基含有シラン化合物を滴下して5分〜2時間反応させる。その際、溶媒は特に不要であるが、クロロホルム、ジオキサン、メタノール、エタノール等の有機溶剤を用いても良い。
本発明の金属捕捉能を持つ官能基を有するシランカップリング剤として、具体的には例えば、イミダゾールシラン、3−アミノプロピルトリメトキシシラン、N−2−(アミノエチル)−3−アミノプロピルトリメトキシシラン、N−2−(アミノエチル)−3−アミノプロピルトリエトキシシラン、3−メルカプトプロピルトリメトキシシラン、ビニルシランが挙げられる。
シランカップリング剤の塗布方法は、当業者が通常行う方法が採用でき、例えばスピンコート、浸漬等が挙げられる。
ナノ金属粒子の大きさとしては、数nmから数百nm、特に2〜100nmが好ましい。本発明のナノ金属粒子は、下記イオン性流体に含まれ、保護された状態でシランカップリング剤と接触させられる。
脂肪族系イオン性流体としては、N,N,N−トリメチル−N−プロピルアンモニウムビス(トリフルオロメタンスルホニル)イミドやN−メチル−N−プロピルピペリジニウムビス(トリフルオロメタンスルホニル)イミド、N,N−ジエチル−N−メチル−N−(2−メトキシエチル)アンモニウムビス(トリフルオロメタンスルホニル)イミド、N,N−ジエチル−N−メチル−N−(2−メトキシエチル)アンモニウムテトラフルオロホウ酸塩等が挙げられる。
基板を酸性溶液と強酸で洗浄する。基板をシランカップリング剤溶液中に浸漬、又は基板上にシランカップリング剤溶液をスピンコートする。適宜、溶剤を選択して洗浄後、加熱乾燥する。スピンコートの場合は、塗布後数分間程度スピンコーター上で回転させてもよい。
イオン性流体を加熱減圧乾燥した後、その上にナノ金属粒子のスパッタリング蒸着を行う。スパッタリングにより得られたナノ金属粒子を含むイオン性流体を、上記コートされた基板上に滴下し、基板表面に広がったイオン性流体を減圧乾燥して除去し、ナノ金属粒子が担持された基板を得る。予め調製したナノ金属粒子をイオン流体と混合して保護した状態で、シランカップリング剤が塗布された基板に滴下し、基板表面に広がったイオン性流体を減圧乾燥して除去し、ナノ金属粒子が担持された基板を得ることも出来る。
以下に本発明の例を示すが、これらは本発明を限定するものではない。
γ−アミノプロピルトリメトキシシラン:信越シリコーン社製、商品名KBM−903。
ジアミノシラン(N−2−(アミノエチル)−3−アミノプロピルトリメトキシシラン:信越シリコーン社製、商品名KBM−603。
メルカプトシラン(3−メルカプトプロピルトリメトシシラン):信越シリコーン社製、商品名KBM−803。
ビニルシラン(ビニルトリメトキシシラン):信越シリコーン社製、商品名KBM−1003。
テトラメトキシシラン:信越シリコーン社製、商品名KBM−04。
(2)イミダゾールシランとして日鉱金属社製、商品名IS−1000を使用し、攪拌しながら純水1cm3、アンモニア水0.1cm3、イミダゾールシラン1cm3を順に加え、一晩放置して、シランカップリング剤溶液を調製した。
シリコン基板を塩酸メタノール溶液(メタノール/塩酸=1)及び濃硫酸でそれぞれ10分間ずつ超音波を照射しながら洗浄した。
(浸漬法)
シリコン基板をシランカップリング剤溶液中へ60℃、5分間浸漬し、水で洗浄した。その後、100℃、10分間で乾燥した。
(スピンコート法)
シランカップリング剤溶液を基板上にスピンコート(2000rpm、10s)し、120℃で30分加熱した。
関東化学社製、1−ブチル−3−メチルイミダゾリウムヘキサフルオロリン酸塩(BMI−PF6)をイオン性流体として使用し、105℃で3時間減圧乾燥した後、スパッタリング蒸着を行った。ターゲットAuは、日鉱金属社製を用いた。スパッタリング蒸着は下記の装置、手順で行った。
スライドガラス(26mm×76mm)上に、1cm3のBMI−PF6を均一にのせた。このとき、BMI−PF6は、その表面張力によりスライドガラスからこぼれることはなかった。これを蒸着装置(エイコーエンジニアリング社製型番IB−3)内に静置し、BMI−PF6に対向する位置にターゲット材としてAu(円板状、直径50mm×厚さ0.1mm)を装着し、スパッタリングを行った(蒸着チャンバー内:アルゴン、圧力:20Pa、蒸着電流:40mA、反応時間:300秒)。スパッタリング後、スライドガラス表面のBMI−PF6溶液(イオン性流体)を回収した。
(ナノ金属粒子の基板への担持)
得られたイオン性流体25mm3を上記で調製したシリコン基板の表面3cm2上へ滴下した。イオン性流体は、シリコン基板表面に均等に広がったが、その表面張力によりシリコン基板からこぼれることはなかった。150℃30分間で減圧乾燥した後、アセトニトリルで洗浄した。
種々のシランカップリング剤を用い、得られた結果を表1にまとめ、実施例1aの電子顕微鏡写真(倍率10万倍、評価+)を図1、実施例1cのもの(倍率10万倍、評価++)を図2、比較例1のもの(倍率10万倍、評価−)を図3に示す。
表中に記載していないが、本発明ではシランカップリング剤をスピンコート法で塗布しても浸漬法と同様の効果が得られた。
Claims (6)
- 基板上に一分子中に金属捕捉能を持つ官能基を少なくとも1個有するシランカップリング剤を塗布した後に、イオン性流体に覆われたナノ金属粒子とシランカップリング剤が塗布された基板とを接触させることを含み、金属捕捉能を持つ官能基がイミダゾール基及びビニル基の群から選ばれた少なくとも一種である、ナノ金属粒子の担持方法。
- 金属捕捉能を持つ官能基がイミダゾール基であることを特徴とする請求項1に記載のナノ金属粒子の担持方法。
- ナノ金属粒子の金属が金、白金、銀、銅、パラジウム、ニッケル、コバルト、ルテニウム、ロジウム、レニウム、マンガン、クロム、モリブデン、タングステン、ニオブ、タンタル、チタン、ジルコニウム、ハフニウム、亜鉛、カドミウム、アルミニウム、ガリウム、インジウム、スズ、シリコンの群から選ばれた少なくとも一種、又は二種以上を組み合わせた合金、又は少なくとも一種を含む金属であることを特徴とする請求項1又は2記載のナノ金属粒子の担持方法。
- イオン性流体が脂肪族系イオン性流体、イミダゾリウム系イオン性流体及びピリジウム系イオン性流体から選択される請求項1記載のナノ金属粒子の担持方法。
- ナノ金属粒子が配線を形成する請求項1〜4のいずれか1項記載のナノ金属粒子の担持方法。
- 請求項1〜4のいずれか1項記載の方法を行って得られるナノ金属粒子が担持された基板。
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PCT/JP2008/066869 WO2009038135A1 (ja) | 2007-09-18 | 2008-09-18 | ナノ金属粒子担持方法及びナノ金属粒子担持基板 |
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JPH06256358A (ja) * | 1993-03-01 | 1994-09-13 | Japan Energy Corp | 新規イミダゾールシラン化合物及びその製造方法並びにそれを用いる金属表面処理剤 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2002068782A (ja) * | 2000-08-29 | 2002-03-08 | Mitsuboshi Belting Ltd | ガラス基板表面のパターンメッキ方法及びこれを用いてパターンメッキを施したガラス基板 |
WO2006132308A1 (ja) * | 2005-06-10 | 2006-12-14 | Bridgestone Corporation | 超微粒子又は超微粒子集合体の製造方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
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JPH06256358A (ja) * | 1993-03-01 | 1994-09-13 | Japan Energy Corp | 新規イミダゾールシラン化合物及びその製造方法並びにそれを用いる金属表面処理剤 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2002068782A (ja) * | 2000-08-29 | 2002-03-08 | Mitsuboshi Belting Ltd | ガラス基板表面のパターンメッキ方法及びこれを用いてパターンメッキを施したガラス基板 |
WO2006132308A1 (ja) * | 2005-06-10 | 2006-12-14 | Bridgestone Corporation | 超微粒子又は超微粒子集合体の製造方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
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