WO2009038135A1 - ナノ金属粒子担持方法及びナノ金属粒子担持基板 - Google Patents
ナノ金属粒子担持方法及びナノ金属粒子担持基板 Download PDFInfo
- Publication number
- WO2009038135A1 WO2009038135A1 PCT/JP2008/066869 JP2008066869W WO2009038135A1 WO 2009038135 A1 WO2009038135 A1 WO 2009038135A1 JP 2008066869 W JP2008066869 W JP 2008066869W WO 2009038135 A1 WO2009038135 A1 WO 2009038135A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nano particle
- metal nano
- metal
- coupling agent
- silane coupling
- Prior art date
Links
- 239000002082 metal nanoparticle Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 125000003277 amino group Chemical group 0.000 abstract 1
- -1 azole compound Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 125000000524 functional group Chemical group 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 125000002883 imidazolyl group Chemical group 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 125000003396 thiol group Chemical group [H]S* 0.000 abstract 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Catalysts (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
- Conductive Materials (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/678,509 US8318313B2 (en) | 2007-09-18 | 2008-09-18 | Method for supporting metal nanoparticles and metal nanoparticles-carrying substrate |
JP2009533181A JP5514548B2 (ja) | 2007-09-18 | 2008-09-18 | ナノ金属粒子担持方法及びナノ金属粒子担持基板 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-241533 | 2007-09-18 | ||
JP2007241533 | 2007-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009038135A1 true WO2009038135A1 (ja) | 2009-03-26 |
Family
ID=40467945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066869 WO2009038135A1 (ja) | 2007-09-18 | 2008-09-18 | ナノ金属粒子担持方法及びナノ金属粒子担持基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8318313B2 (ja) |
JP (1) | JP5514548B2 (ja) |
WO (1) | WO2009038135A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016060099A1 (ja) * | 2014-10-17 | 2016-04-21 | 信越化学工業株式会社 | 有機ケイ素化合物及びその製造方法、並びにそれを用いる金属表面処理剤 |
WO2017034029A1 (ja) * | 2015-08-27 | 2017-03-02 | 国立大学法人大阪大学 | 金属ナノ粒子製造方法、金属ナノ粒子担持担体製造方法、及び金属ナノ粒子担持担体 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06256358A (ja) * | 1993-03-01 | 1994-09-13 | Japan Energy Corp | 新規イミダゾールシラン化合物及びその製造方法並びにそれを用いる金属表面処理剤 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2002068782A (ja) * | 2000-08-29 | 2002-03-08 | Mitsuboshi Belting Ltd | ガラス基板表面のパターンメッキ方法及びこれを用いてパターンメッキを施したガラス基板 |
WO2006132308A1 (ja) * | 2005-06-10 | 2006-12-14 | Bridgestone Corporation | 超微粒子又は超微粒子集合体の製造方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7045461B2 (en) | 2000-01-07 | 2006-05-16 | Nikkon Materials Co., Ltd. | Metal plating method, pretreatment agent, and semiconductor wafer and semiconductor device obtained using these |
-
2008
- 2008-09-18 US US12/678,509 patent/US8318313B2/en active Active
- 2008-09-18 JP JP2009533181A patent/JP5514548B2/ja active Active
- 2008-09-18 WO PCT/JP2008/066869 patent/WO2009038135A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06256358A (ja) * | 1993-03-01 | 1994-09-13 | Japan Energy Corp | 新規イミダゾールシラン化合物及びその製造方法並びにそれを用いる金属表面処理剤 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2002068782A (ja) * | 2000-08-29 | 2002-03-08 | Mitsuboshi Belting Ltd | ガラス基板表面のパターンメッキ方法及びこれを用いてパターンメッキを施したガラス基板 |
WO2006132308A1 (ja) * | 2005-06-10 | 2006-12-14 | Bridgestone Corporation | 超微粒子又は超微粒子集合体の製造方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016060099A1 (ja) * | 2014-10-17 | 2016-04-21 | 信越化学工業株式会社 | 有機ケイ素化合物及びその製造方法、並びにそれを用いる金属表面処理剤 |
US10442822B2 (en) | 2014-10-17 | 2019-10-15 | Shin-Etsu Chemical Co., Ltd. | Organosilicon compound, method for producing same and metal surface treatment agent using same |
WO2017034029A1 (ja) * | 2015-08-27 | 2017-03-02 | 国立大学法人大阪大学 | 金属ナノ粒子製造方法、金属ナノ粒子担持担体製造方法、及び金属ナノ粒子担持担体 |
JPWO2017034029A1 (ja) * | 2015-08-27 | 2018-08-09 | 国立大学法人大阪大学 | 金属ナノ粒子製造方法、金属ナノ粒子担持担体製造方法、及び金属ナノ粒子担持担体 |
Also Published As
Publication number | Publication date |
---|---|
JP5514548B2 (ja) | 2014-06-04 |
US8318313B2 (en) | 2012-11-27 |
JPWO2009038135A1 (ja) | 2011-01-06 |
US20100215970A1 (en) | 2010-08-26 |
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