JP5509190B2 - 光学試験装置およびプローブカード - Google Patents

光学試験装置およびプローブカード Download PDF

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Publication number
JP5509190B2
JP5509190B2 JP2011284266A JP2011284266A JP5509190B2 JP 5509190 B2 JP5509190 B2 JP 5509190B2 JP 2011284266 A JP2011284266 A JP 2011284266A JP 2011284266 A JP2011284266 A JP 2011284266A JP 5509190 B2 JP5509190 B2 JP 5509190B2
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JP
Japan
Prior art keywords
dummy
test apparatus
optical test
probe
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011284266A
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English (en)
Japanese (ja)
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JP2013135074A (ja
Inventor
練 内田
真治 石川
哲也 佐藤
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Sharp Corp
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Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2011284266A priority Critical patent/JP5509190B2/ja
Priority to TW101147928A priority patent/TWI481830B/zh
Priority to CN201210558895.1A priority patent/CN103176115B/zh
Priority to KR1020120152328A priority patent/KR101473064B1/ko
Publication of JP2013135074A publication Critical patent/JP2013135074A/ja
Application granted granted Critical
Publication of JP5509190B2 publication Critical patent/JP5509190B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Led Devices (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2011284266A 2011-12-26 2011-12-26 光学試験装置およびプローブカード Expired - Fee Related JP5509190B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011284266A JP5509190B2 (ja) 2011-12-26 2011-12-26 光学試験装置およびプローブカード
TW101147928A TWI481830B (zh) 2011-12-26 2012-12-17 Optical test device
CN201210558895.1A CN103176115B (zh) 2011-12-26 2012-12-20 光学试验装置
KR1020120152328A KR101473064B1 (ko) 2011-12-26 2012-12-24 광학 시험 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011284266A JP5509190B2 (ja) 2011-12-26 2011-12-26 光学試験装置およびプローブカード

Publications (2)

Publication Number Publication Date
JP2013135074A JP2013135074A (ja) 2013-07-08
JP5509190B2 true JP5509190B2 (ja) 2014-06-04

Family

ID=48636102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011284266A Expired - Fee Related JP5509190B2 (ja) 2011-12-26 2011-12-26 光学試験装置およびプローブカード

Country Status (4)

Country Link
JP (1) JP5509190B2 (zh)
KR (1) KR101473064B1 (zh)
CN (1) CN103176115B (zh)
TW (1) TWI481830B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541233B1 (ko) * 2014-01-29 2015-08-03 한국광기술원 발광 디바이스 제조 장치
CN105632960B (zh) * 2016-01-15 2018-04-17 上海华虹宏力半导体制造有限公司 优化探针台测试针压参数的方法
CN106158689B (zh) * 2016-06-30 2019-04-23 华灿光电(苏州）有限公司 基于多组测试探针的二极管光电测试方法
CN113540144A (zh) * 2021-06-18 2021-10-22 泉州三安半导体科技有限公司 实现多颗led芯片esd测试的晶圆、正装led芯片及其制造方法
CN113639859A (zh) * 2021-08-25 2021-11-12 扬州和铵半导体有限公司 Led封装的光电测试装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945957A (ja) * 1995-07-28 1997-02-14 Oki Electric Ind Co Ltd 端面発光型ｌｅｄアレイの製造方法及びその検査方法
JP3133938B2 (ja) * 1996-03-08 2001-02-13 シャープ株式会社 半導体素子の電気光学特性測定装置
JP3120760B2 (ja) * 1997-10-27 2000-12-25 日本電気株式会社 プローブカード及び該プローブカードを用いた試験方法
JP4615283B2 (ja) * 2004-10-18 2011-01-19 三菱電機株式会社 半導体デバイスの特性測定方法
TWI250603B (en) * 2004-12-27 2006-03-01 Advanced Semiconductor Eng Method for wafer-level testing photoelectric chips
JP2006319066A (ja) * 2005-05-11 2006-11-24 Hitachi Cable Ltd 発光ダイオードアレイ
KR101499047B1 (ko) * 2007-04-03 2015-03-05 스캐니메트릭스 인크. 활성 프로브 집적 회로를 이용한 전자 회로 테스팅
JP5021784B2 (ja) * 2010-04-01 2012-09-12 シャープ株式会社 発光測定装置および発光測定方法、制御プログラム、可読記録媒体
JP2011237350A (ja) * 2010-05-12 2011-11-24 Showa Denko Kk 発光部品試験モジュールおよび発光部品試験装置

Also Published As

Publication number Publication date
KR101473064B1 (ko) 2014-12-15
CN103176115B (zh) 2016-01-06
KR20130079235A (ko) 2013-07-10
CN103176115A (zh) 2013-06-26
TW201331559A (zh) 2013-08-01
TWI481830B (zh) 2015-04-21
JP2013135074A (ja) 2013-07-08

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