JP5504667B2 - シリコンウェーハおよびその製造方法 - Google Patents

シリコンウェーハおよびその製造方法 Download PDF

Info

Publication number
JP5504667B2
JP5504667B2 JP2009075001A JP2009075001A JP5504667B2 JP 5504667 B2 JP5504667 B2 JP 5504667B2 JP 2009075001 A JP2009075001 A JP 2009075001A JP 2009075001 A JP2009075001 A JP 2009075001A JP 5504667 B2 JP5504667 B2 JP 5504667B2
Authority
JP
Japan
Prior art keywords
wafer
silicon
range
heat treatment
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009075001A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010228931A (ja
JP2010228931A5 (enExample
Inventor
敏昭 小野
亘 伊藤
淳 藤瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009075001A priority Critical patent/JP5504667B2/ja
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to KR1020117025002A priority patent/KR101389058B1/ko
Priority to KR1020137013027A priority patent/KR101422713B1/ko
Priority to PCT/JP2010/002117 priority patent/WO2010109873A1/ja
Priority to EP14151040.4A priority patent/EP2722423B1/en
Priority to EP10755675.5A priority patent/EP2412849B1/en
Priority to KR1020147011599A priority patent/KR101507360B1/ko
Priority to US13/258,962 priority patent/US8890291B2/en
Publication of JP2010228931A publication Critical patent/JP2010228931A/ja
Publication of JP2010228931A5 publication Critical patent/JP2010228931A5/ja
Application granted granted Critical
Publication of JP5504667B2 publication Critical patent/JP5504667B2/ja
Priority to US14/518,594 priority patent/US9243345B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2009075001A 2009-03-25 2009-03-25 シリコンウェーハおよびその製造方法 Expired - Fee Related JP5504667B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2009075001A JP5504667B2 (ja) 2009-03-25 2009-03-25 シリコンウェーハおよびその製造方法
US13/258,962 US8890291B2 (en) 2009-03-25 2010-03-25 Silicon wafer and manufacturing method thereof
PCT/JP2010/002117 WO2010109873A1 (ja) 2009-03-25 2010-03-25 シリコンウェーハおよびその製造方法
EP14151040.4A EP2722423B1 (en) 2009-03-25 2010-03-25 Method of manufacturing a silicon wafer
EP10755675.5A EP2412849B1 (en) 2009-03-25 2010-03-25 Silicon wafer and method for manufacturing same
KR1020147011599A KR101507360B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
KR1020117025002A KR101389058B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
KR1020137013027A KR101422713B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
US14/518,594 US9243345B2 (en) 2009-03-25 2014-10-20 Silicon wafer and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009075001A JP5504667B2 (ja) 2009-03-25 2009-03-25 シリコンウェーハおよびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014055515A Division JP5660237B2 (ja) 2014-03-18 2014-03-18 シリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2010228931A JP2010228931A (ja) 2010-10-14
JP2010228931A5 JP2010228931A5 (enExample) 2012-03-01
JP5504667B2 true JP5504667B2 (ja) 2014-05-28

Family

ID=43045110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009075001A Expired - Fee Related JP5504667B2 (ja) 2009-03-25 2009-03-25 シリコンウェーハおよびその製造方法

Country Status (1)

Country Link
JP (1) JP5504667B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6260100B2 (ja) 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6589807B2 (ja) 2016-10-13 2019-10-16 株式会社Sumco シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ
EP3929334A1 (de) * 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3711199B2 (ja) * 1998-07-07 2005-10-26 信越半導体株式会社 シリコン基板の熱処理方法
WO2007100158A1 (ja) * 2006-03-03 2007-09-07 Niigata University ＣＺ法によるSi単結晶インゴットの製造方法
JP5239155B2 (ja) * 2006-06-20 2013-07-17 信越半導体株式会社 シリコンウエーハの製造方法
JP2008066357A (ja) * 2006-09-05 2008-03-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
JP4760822B2 (ja) * 2007-12-14 2011-08-31 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
JP2010228931A (ja) 2010-10-14

Similar Documents

Publication Publication Date Title
US9243345B2 (en) Silicon wafer and manufacturing method thereof
TWI420599B (zh) 矽晶圓之製造方法
US8920560B2 (en) Method for manufacturing epitaxial wafer
US20180247830A1 (en) Method for manufacturing silicon wafer
US20110156215A1 (en) Silicone Wafer and Production Method Therefor
JP5504664B2 (ja) シリコンエピタキシャルウェーハおよびその製造方法
EP1758154A1 (en) Silicon wafer manufacturing method and silicon wafer
JP5542383B2 (ja) シリコンウェーハの熱処理方法
JP5944643B2 (ja) シリコンウェーハの熱処理方法
JP2002145697A (ja) 単結晶シリコンウェーハ、インゴット及びその製造方法
JP5504667B2 (ja) シリコンウェーハおよびその製造方法
JP5613994B2 (ja) シリコンウェーハおよびその製造方法
TWI382469B (zh) 矽晶圓及其製造方法
JP5590644B2 (ja) シリコンウェーハの熱処理方法
US8999864B2 (en) Silicon wafer and method for heat-treating silicon wafer
JP2010228925A (ja) シリコンウェーハおよびその製造方法
JP2010040588A (ja) シリコンウェーハ
JP5660237B2 (ja) シリコンウェーハの製造方法
JP5811218B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP5583053B2 (ja) シリコンウェーハの熱処理方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140218

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140303

R150 Certificate of patent or registration of utility model

Ref document number: 5504667

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees