JP5499371B2 - 歪み層の弛緩及び転写 - Google Patents
歪み層の弛緩及び転写 Download PDFInfo
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Description
(中間)基板上の歪み物質層からアイランドを形成するステップと、
第1の熱処理により歪み物質アイランドを少なくとも部分的に弛緩させるステップと、
前記少なくとも部分的に弛緩された歪み物質アイランドを前記ターゲット基板へと転写するステップと、
という順次行われる複数のステップを備える方法により解決される。
シード基板上に歪み物質層を成長させるステップと、
弱化層を形成するため前記歪み物質層の下の前記シード基板においてイオンを注入するステップと、
好ましくは、第1のコンプライアント物質のリフロー温度より下の温度での第3の熱処理により、前記弱化層にて前記低粘性層及び前記歪み物質を前記シード基板から分離するステップと、
を含む。パターン形成は、転写の後で行うことができる。この場合に、弱化層は、シード層内に全て形成され、弱化層の均質な(滑らかな)プロフィールを達成することができ、これは、はっきりとした縁部をもって分離するのに効果的である。弱化層は、歪み層においても行うことができ、これによっても、均質なプロフィールとすることができる。別の例では、弱化層は、内部空間の底部に低粘性層(埋込み層)で満たされた部分を備えており、転写後その表面が滑らかでなければならず、ターゲット基板への結合及び転写前に厳しい平坦化ステップを必要としている。
シード基板上に堆積されたシード層上に歪み物質層を成長させるステップと、
歪み物質層のパターン形成が行われた後に、歪み物質アイランド上及び前記歪み物質アイランドを分離している内部空間に埋込み層(低粘性層)を堆積させるステップと、
弱化層を形成するため前記歪み物質アイランドより下のシード層及び前記歪み物質アイランドを分離している内部空間の底部の埋込み層にイオンを注入するステップと、
第1のコンプライアント物質のリフロー温度より、好ましくは、下の温度での第3の熱処理により、前記弱化層にて前記埋込み層及び前記歪み物質層を前記シード基板から前記中間基板へと転写するステップと、
を含む方法が提供される。
シード基板上に歪みInGaN-層を成長させ、
低粘性層、特に、第1の埋込みコンプライアント層を前記歪みInGaN−層上に堆積させ、前記第1の埋込みコンプライント層を前記基板へ結合させ、前記シード基板を分離することにより、前記歪みInGaN-層を前記シード基板から前記基板へと転写し、
前記歪みInGaN-層を前記シード基板から前記基板へと転写した後、前記歪みInGaN-層をパターン形成して、空所により分離された歪みInGaN-アイランドを形成し、
前記コンプライアント物質のある程度のリフローを生じる第1の熱処理により、前記基板へ転写された前記歪みInGaN-アイランドを少なくとも部分的に弛緩し、
前記弛緩されたアイランドをターゲット基板へ転写する、
ことを含む方法が提供される。
特に、サファイアからなる支持構造体と、
高粘性層と、
特に、100マイクロメートルx100マイクロメートルから1ミリメートルx1ミリメートルまでの面積サイズと、1000オングストローム以下の厚さとを有する少なくとも部分的に弛緩された歪み物質のアイランドと、
を備えるウエハを提供する。
Claims (13)
- ターゲット基板上に少なくとも部分的に弛緩された歪み物質アイランドを形成するための方法であって、
中間基板上の歪み物質層からアイランドを形成するステップと、
第1の熱処理により前記歪み物質アイランドを少なくとも部分的に弛緩させるステップと、
前記少なくとも部分的に弛緩された歪み物質アイランドを前記ターゲット基板へと転写するステップと、
という順次行われる複数のステップを備え、
前記少なくとも部分的に弛緩された歪み物質アイランドを前記ターゲット基板へ転写するステップは、高粘性層を、前記少なくとも部分的に弛緩された歪み物質アイランド上に堆積させ、前記高粘性層を前記ターゲット基板へ結合させるステップを含む方法。 - ターゲット基板上に少なくとも部分的に弛緩された歪み物質アイランドを形成するための方法であって、
中間基板上の歪み物質層からアイランドを形成するステップと、
第1の熱処理により前記歪み物質アイランドを少なくとも部分的に弛緩させるステップと、
前記少なくとも部分的に弛緩された歪み物質アイランドを前記ターゲット基板へと転写するステップと、
という順次行われる複数のステップを備え、
前記少なくとも部分的に弛緩された歪み物質アイランドを前記ターゲット基板へ転写するステップは、低粘性層を前記少なくとも部分的に弛緩された歪み物質アイランド上に堆積させ、前記低粘性層を前記ターゲット基板へ結合させるステップを含み、前記ターゲット基板へ転写された前記少なくとも部分的に弛緩された歪み物質アイランドを第2の熱処理により弛緩するステップを更に含む方法。 - 前記歪み物質層をシード基板から前記中間基板へと転写するステップを更に含み、前記歪み物質層を前記シード基板から前記中間基板へと転写するステップは、低粘性層を前記歪み物質層上に堆積させるステップと、前記低粘性層を前記中間基板へ結合させるステップと、を含む、請求項1又は2に記載の方法。
- 前記歪み物質層をシード基板から前記中間基板へと転写する前に、前記歪み物質層をパターン形成し、それにより、空所により分離された歪み物質アイランドを形成するステップを更に含む、請求項1〜3のいずれか一項に記載の方法。
- 前記歪み物質層をシード基板から前記中間基板へ転写した後に、前記歪み物質層をパターン形成し、それにより、空所により分離された歪み物質アイランドを形成するステップを更に含み、前記空所は、前記中間基板へと下方へ延び、前記低粘性層の物質が前記空所の底部に実質的に残らないようにする、請求項1〜4のいずれか一項に記載の方法。
- 前記歪み物質層アイランドを少なくとも部分的に弛緩する前に、前記歪み物質層アイランド上に第2の埋込み層を堆積させるステップと、前記第2の埋込み層及び前記歪み物質層アイランドをパターン形成するするステップと、を更に含む、請求項3に記載の方法。
- シード基板上に前記歪み物質層を成長させるステップと、
弱化層を形成するため前記歪み物質の下の前記シード基板にイオンを注入するステップと、
第3の熱処理により、前記弱化層にて前記歪み物質を前記シード基板から分離するステップと、
を更に含む、請求項3〜6のいずれか一項に記載の方法。 - シード基板上に前記歪み物質層を成長させるステップと、
前記歪み物質層のパターン形成が行われた後に、前記歪み物質アイランド上及び前記歪み物質アイランドを分離している空所に前記低粘性層を堆積させるステップと、
弱化層を形成するため前記歪み物質アイランドより下の前記シード基板及び前記歪み物質アイランドを分離している前記空所の底部の前記低粘性層にイオンを注入するステップと、
第3の熱処理により、前記弱化層にて前記シード基板から前記歪み物質アイランドを分離するステップと、
を更に含む、請求項4に記載の方法。 - 前記シード基板及び前記中間基板、及び/又は前記中間基板及び前記ターゲット基板は、同じ物質である、請求項1〜8のいずれか一項に記載の方法。
- 前記低粘性層及び/又は前記高粘性層は、電磁放射線を吸収するに適した吸収層を含む、請求項1〜9のいずれか一項に記載の方法。
- 弱化領域より下方にトレンチを形成するためのパターンを形成する前に、前記弱化領域を形成するため前記シード基板においてイオンを注入するステップを更に含み、前記低粘性層は、前記パターン形成により形成されたトレンチを完全には満たさないように前記パターン形成された歪み物質層上に堆積されており、前記パターン形成により形成された前記アイランドを前記中間基板へ結合させるステップと、前記弱化領域にて前記シード基板を分離するステップと、を更に含む、請求項4に記載の方法。
- 前記歪み物質層は、InGaNを含み又はInGaNからなり、及び/又は前記低粘性層は、ホウリン酸ケイ酸塩ガラス、BPSG又はホウ素又はリンを含むSiO2-化合物を含み又はそれらからなり、及び/又は前記高粘性層は、熱酸化物物質を含む、請求項1〜11のいずれか一項に記載の方法。
- 半導体デバイスを製造するための方法であって、請求項1〜12のいずれか一項に記載の方法によりターゲット基板上に少なくとも部分的に弛緩された歪み物質を与えるステップと、更に、前記形成された少なくとも部分的に弛緩された歪み物質上に少なくとも1つの物質層をエピタキシャル成長させるステップとを含む方法。
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