JP5498243B2 - 露光装置、露光方法及びデバイス製造方法 - Google Patents

露光装置、露光方法及びデバイス製造方法 Download PDF

Info

Publication number
JP5498243B2
JP5498243B2 JP2010107716A JP2010107716A JP5498243B2 JP 5498243 B2 JP5498243 B2 JP 5498243B2 JP 2010107716 A JP2010107716 A JP 2010107716A JP 2010107716 A JP2010107716 A JP 2010107716A JP 5498243 B2 JP5498243 B2 JP 5498243B2
Authority
JP
Japan
Prior art keywords
substrate
stage
measurement
height
measurement point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010107716A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011238707A5 (enExample
JP2011238707A (ja
Inventor
隆紀 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010107716A priority Critical patent/JP5498243B2/ja
Priority to KR1020110040205A priority patent/KR101444981B1/ko
Priority to US13/099,686 priority patent/US8625072B2/en
Publication of JP2011238707A publication Critical patent/JP2011238707A/ja
Publication of JP2011238707A5 publication Critical patent/JP2011238707A5/ja
Priority to US14/094,950 priority patent/US9001306B2/en
Application granted granted Critical
Publication of JP5498243B2 publication Critical patent/JP5498243B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/53—Automatic registration or positioning of originals with respect to each other or the photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010107716A 2010-05-07 2010-05-07 露光装置、露光方法及びデバイス製造方法 Active JP5498243B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010107716A JP5498243B2 (ja) 2010-05-07 2010-05-07 露光装置、露光方法及びデバイス製造方法
KR1020110040205A KR101444981B1 (ko) 2010-05-07 2011-04-28 노광 장치, 노광 방법 및 디바이스 제조 방법
US13/099,686 US8625072B2 (en) 2010-05-07 2011-05-03 Exposure apparatus, exposure method, and method of manufacturing device
US14/094,950 US9001306B2 (en) 2010-05-07 2013-12-03 Exposure apparatus, exposure method, and method of manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010107716A JP5498243B2 (ja) 2010-05-07 2010-05-07 露光装置、露光方法及びデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014045560A Division JP2014143429A (ja) 2014-03-07 2014-03-07 露光装置、露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2011238707A JP2011238707A (ja) 2011-11-24
JP2011238707A5 JP2011238707A5 (enExample) 2013-06-20
JP5498243B2 true JP5498243B2 (ja) 2014-05-21

Family

ID=44901733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010107716A Active JP5498243B2 (ja) 2010-05-07 2010-05-07 露光装置、露光方法及びデバイス製造方法

Country Status (3)

Country Link
US (2) US8625072B2 (enExample)
JP (1) JP5498243B2 (enExample)
KR (1) KR101444981B1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5849613B2 (ja) 2011-10-31 2016-01-27 株式会社リコー 画像表示装置
JP6053316B2 (ja) * 2012-05-09 2016-12-27 キヤノン株式会社 リソグラフィー装置、および、物品製造方法
JP6066610B2 (ja) * 2012-07-31 2017-01-25 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
JP6071628B2 (ja) * 2013-02-22 2017-02-01 キヤノン株式会社 露光装置、露光方法及びデバイスの製造方法
JP5734344B2 (ja) * 2013-05-16 2015-06-17 キヤノン株式会社 露光装置および物品の製造方法
JP5986538B2 (ja) 2013-06-10 2016-09-06 キヤノン株式会社 露光装置および物品の製造方法
JP6267530B2 (ja) * 2014-02-04 2018-01-24 キヤノン株式会社 露光装置、および物品の製造方法
JP6463935B2 (ja) * 2014-09-30 2019-02-06 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
CN111610696A (zh) 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
TWI693477B (zh) 2015-02-23 2020-05-11 日商尼康股份有限公司 測量裝置、微影系統及曝光裝置、以及元件製造方法
KR102691584B1 (ko) 2015-02-23 2024-08-05 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
JP6776352B2 (ja) 2015-12-15 2020-10-28 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
CN107544213B (zh) * 2016-06-29 2019-10-25 上海微电子装备（集团）股份有限公司 光刻机动态调平调焦方法
JP6806509B2 (ja) * 2016-09-15 2021-01-06 キヤノン株式会社 露光装置及び物品の製造方法
CN108022847B (zh) * 2016-10-31 2020-12-18 中芯国际集成电路制造(上海)有限公司 用于检测基板上的标记的装置、设备和方法
JP6882091B2 (ja) * 2017-06-21 2021-06-02 キヤノン株式会社 露光装置及び物品の製造方法
JP6952590B2 (ja) * 2017-11-30 2021-10-20 キヤノン株式会社 露光装置、露光方法、および物品の製造方法
JP6688330B2 (ja) * 2018-02-28 2020-04-28 キヤノン株式会社 露光方法、露光装置、決定方法および物品製造方法
JP2020109531A (ja) * 2020-04-02 2020-07-16 キヤノン株式会社 露光装置、露光方法、および物品製造方法
EP3923078A1 (en) 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
JP2024157368A (ja) * 2023-04-25 2024-11-07 キヤノン株式会社 露光装置、露光方法、および物品製造方法
TW202531165A (zh) * 2023-10-03 2025-08-01 日商佳能股份有限公司 決定方法、圖案轉印方法、物品製造方法、程式、資訊處理裝置及微影系統

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3316833B2 (ja) * 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
JP3376179B2 (ja) 1995-08-03 2003-02-10 キヤノン株式会社 面位置検出方法
JP3754743B2 (ja) * 1996-03-01 2006-03-15 キヤノン株式会社 表面位置設定方法、ウエハ高さ設定方法、面位置設定方法、ウエハ面位置検出方法および露光装置
JP3376219B2 (ja) 1996-08-22 2003-02-10 キヤノン株式会社 面位置検出装置および方法
JP3428825B2 (ja) * 1996-08-02 2003-07-22 キヤノン株式会社 面位置検出方法および面位置検出装置
JPH1097987A (ja) * 1996-09-25 1998-04-14 Canon Inc 走査型露光装置および方法
US6090510A (en) * 1997-03-25 2000-07-18 Nikon Corporation Method for scanning exposure
JP3428872B2 (ja) 1997-08-29 2003-07-22 キヤノン株式会社 露光方法および装置
JP3815759B2 (ja) * 1997-09-22 2006-08-30 キヤノン株式会社 検出方法、露光装置およびデバイス製造方法
JPH11186129A (ja) * 1997-12-19 1999-07-09 Nikon Corp 走査型露光方法及び装置
AU2076099A (en) * 1998-01-29 1999-08-16 Nikon Corporation Exposure method and device
JP4072981B2 (ja) * 1998-10-09 2008-04-09 キヤノン株式会社 露光装置およびデバイス製造方法
WO2005124832A1 (ja) 2004-06-17 2005-12-29 Nikon Corporation 露光装置
JP2007035783A (ja) * 2005-07-25 2007-02-08 Canon Inc 露光装置及び方法
JP4953923B2 (ja) 2007-05-30 2012-06-13 キヤノン株式会社 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
US20140092374A1 (en) 2014-04-03
KR101444981B1 (ko) 2014-09-26
US20110273686A1 (en) 2011-11-10
JP2011238707A (ja) 2011-11-24
KR20110123665A (ko) 2011-11-15
US9001306B2 (en) 2015-04-07
US8625072B2 (en) 2014-01-07

Similar Documents

Publication Publication Date Title
JP5498243B2 (ja) 露光装置、露光方法及びデバイス製造方法
KR100875008B1 (ko) 노광장치 및 디바이스 제조방법
KR100365602B1 (ko) 노광방법및장치와반도체디바이스제조방법
US20250370360A1 (en) Control method of movable body, exposure method, device manufacturing method, movable body apparatus, and exposure apparatus
JP6882091B2 (ja) 露光装置及び物品の製造方法
JPH0945608A (ja) 面位置検出方法
JP6071628B2 (ja) 露光装置、露光方法及びデバイスの製造方法
JP3880155B2 (ja) 位置決め方法及び位置決め装置
JP5339671B2 (ja) 描画システム
JP6267530B2 (ja) 露光装置、および物品の製造方法
JP5137879B2 (ja) 露光装置及びデバイス製造方法
JP6327861B2 (ja) リソグラフィ装置、リソグラフィ方法、および物品の製造方法
JP2014143429A (ja) 露光装置、露光方法及びデバイス製造方法
US20090310108A1 (en) Exposure apparatus and method of manufacturing device
JP3754743B2 (ja) 表面位置設定方法、ウエハ高さ設定方法、面位置設定方法、ウエハ面位置検出方法および露光装置
JP2010258085A (ja) 面位置検出方法
US9557657B2 (en) Exposure apparatus and method of manufacturing article
JP2009194247A (ja) 露光装置
JPH10209030A (ja) 投影露光方法及び投影露光装置
JP2010114265A (ja) 走査露光装置およびその制御方法、ならびにデバイス製造方法
JP2008058477A (ja) 描画装置
JP6053316B2 (ja) リソグラフィー装置、および、物品製造方法
JP7137363B2 (ja) 露光方法、露光装置、物品の製造方法及び計測方法
JP2001338858A (ja) 位置合わせ方法、露光方法、及びデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130502

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130502

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140131

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140307

R151 Written notification of patent or utility model registration

Ref document number: 5498243

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151