JP5497193B2 - ナノワイヤ絶縁構造および形成方法 - Google Patents
ナノワイヤ絶縁構造および形成方法 Download PDFInfo
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- JP5497193B2 JP5497193B2 JP2012543109A JP2012543109A JP5497193B2 JP 5497193 B2 JP5497193 B2 JP 5497193B2 JP 2012543109 A JP2012543109 A JP 2012543109A JP 2012543109 A JP2012543109 A JP 2012543109A JP 5497193 B2 JP5497193 B2 JP 5497193B2
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- 239000002070 nanowire Substances 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 42
- 238000009413 insulation Methods 0.000 title claims 6
- 230000015572 biosynthetic process Effects 0.000 title description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 45
- 229910052732 germanium Inorganic materials 0.000 claims description 39
- 239000011241 protective layer Substances 0.000 claims description 38
- 238000005253 cladding Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 15
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910000927 Ge alloy Inorganic materials 0.000 claims 8
- 238000000059 patterning Methods 0.000 claims 6
- 238000002955 isolation Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 14
- 230000006870 function Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000004377 microelectronic Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (28)
- 少なくとも1つのナノワイヤに隣接して設けられる誘電体であって、前記誘電体の第1面から前記誘電体内へと延在する少なくとも1つの窪みチャネルを含む誘電体と、
前記誘電体の前記第1面及び前記窪みチャネル内を覆い、かつ、前記ナノワイヤ上に設けられた保護層と、
前記窪みチャネルを実質的に充填するべく、前記保護層上に設けられた充填誘電体と
を備え、
前記誘電体は、フィンを有する基板上に形成され、
前記ナノワイヤは、前記フィン上に形成されるナノワイヤ絶縁構造。 - 前記充填誘電体の第1面は、前記充填誘電体に対して実質的に平面をなす請求項1に記載のナノワイヤ絶縁構造。
- 前記ナノワイヤは、ゲルマニウムナノワイヤを含む請求項1に記載のナノワイヤ絶縁構造。
- 前記ゲルマニウムナノワイヤは、ゲルマニウム含有量が50%から100%の間であるゲルマニウムナノワイヤを含む請求項3に記載のナノワイヤ絶縁構造。
- 前記誘電体は、酸化シリコンを含む請求項1に記載のナノワイヤ絶縁構造。
- 前記保護層は、高誘電材料を含む請求項1に記載のナノワイヤ絶縁構造。
- 前記保護層は、窒化シリコンを含む請求項1に記載のナノワイヤ絶縁構造。
- 前記充填誘電体は、酸化シリコンを含む請求項1に記載のナノワイヤ絶縁構造。
- 少なくとも1つのナノワイヤを形成する段階と、
前記ナノワイヤに隣接して誘電体を形成する段階であって、前記誘電体に少なくとも1つの窪みチャネルを形成することを含む前記誘電体を形成する段階と、
前記誘電体及び前記ナノワイヤ上に保護層を形成する段階と、
前記保護層上に充填誘電体を堆積する段階と、
前記保護層の一部を露出させ、前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の一部を取り除く段階と
を備える方法によって形成され、
前記誘電体は、フィンを有する基板上に形成され、
前記ナノワイヤは、前記フィン上に形成され、
前記誘電体の第1面から前記誘電体内へと延在する少なくとも1つの窪みチャネルを含むナノワイヤ絶縁構造。 - 前記保護層の一部を露出させ、前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の一部を取り除く段階は、前記保護層の一部を露出させ、前記保護層に対して実質的に平面をなす前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の一部を取り除くことを含む請求項9に記載のナノワイヤ絶縁構造。
- 前記少なくとも1つのナノワイヤを形成する段階は、少なくとも1つのゲルマニウムナノワイヤを形成することを含む請求項9に記載のナノワイヤ絶縁構造。
- 前記少なくとも1つのゲルマニウムナノワイヤを形成する段階は、ゲルマニウム含有量が約50%から100%の間である少なくとも1つのゲルマニウムナノワイヤを形成することを含む請求項11に記載のナノワイヤ絶縁構造。
- 前記誘電体及び前記ナノワイヤ上に保護層を形成する段階は、前記誘電体及び前記ナノワイヤ上に、高誘電率保護層を形成することを含む請求項9に記載のナノワイヤ絶縁構造。
- 前記誘電体及び前記ナノワイヤ上に保護層を形成する段階は、前記誘電体及び前記ナノワイヤ上に、窒化シリコン保護層を形成することを含む請求項9に記載のナノワイヤ絶縁構造。
- 前記少なくとも1つのナノワイヤを形成する段階は、
基板上にマスクをパターニングする段階と、
1つの上面及び2つの対向する側面をそれぞれ有する少なくとも1つのフィンと、少なくとも1つの凹部とを形成するべく、前記基板をエッチングする段階と、
前記パターニングされたマスクを取り除く段階と、
前記凹部及び前記フィン上に、前記誘電体を堆積する段階と、
前記フィンそれぞれの前記側面の一部を露出させるべく、前記誘電体を後退させる段階と、
前記フィンそれぞれの露出された前記側面及び前記上面に、ゲルマニウム合金クラッドを形成する段階と、
前記ゲルマニウム合金クラッドをゲルマニウムナノワイヤに変換するべく、前記ゲルマニウム合金クラッドを酸化及びアニールする段階とを有する請求項9に記載のナノワイヤ絶縁構造。 - 前記基板上にマスクをパターニングする段階は、シリコン含有基板上にマスクをパターニングすることを含む請求項15に記載のナノワイヤ絶縁構造。
- 前記ゲルマニウム合金クラッドを形成する段階は、シリコンゲルマニウム合金クラッドを形成することを含む請求項16に記載のナノワイヤ絶縁構造。
- 前記少なくとも1つのナノワイヤを形成する段階及び前記ナノワイヤに隣接して誘電体を形成する段階は、
1つの上面及び2つの対向する側面をそれぞれ有する少なくとも1つのフィンと、少なくとも1つの凹部とを、シリコン含有基板に形成する段階と、
前記凹部及び前記フィンの上に前記誘電体を堆積する段階と、
前記フィンの少なくとも1つの前記側面の一部を露出させるべく、前記誘電体を後退させる段階と、
前記フィンそれぞれの前記露出された側面及び前記上面に合金クラッドを形成する段階と、
前記合金クラッドを、ナノワイヤ及び前記ナノワイヤを実質的に囲む酸化物シェルに変換する段階と、
前記ナノワイヤ及び前記誘電体上に第2誘電体を堆積する段階と、
前記第2誘電体及び前記酸化物シェルを除去する段階と
を有する請求項9に記載のナノワイヤ絶縁構造。 - 基板が有するフィン上に、少なくとも1つのナノワイヤを形成する段階と、
前記ナノワイヤに隣接し、かつ、前記基板上に誘電体を形成する段階であって、前記誘電体に少なくとも1つの窪みチャネルを形成することを含む前記誘電体を形成する段階と、
前記誘電体及び前記ナノワイヤ上に保護層を形成する段階と、
前記保護層上に充填誘電体を堆積する段階と、
前記保護層の一部を露出させ、前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の一部を取り除く段階と
を備え、
前記誘電体の第1面から前記誘電体内へと延在する少なくとも1つの窪みチャネルを含むナノワイヤ絶縁構造を形成する方法。 - 前記保護層の一部を露出させ、前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の前記一部を取り除く段階は、前記保護層の一部を露出させ、に前記保護層に対して実質的に平面をなす前記窪みチャネル内に前記充填誘電体の一部を残すべく、前記充填誘電体の前記一部を取り除くことを含む請求項19に記載の方法。
- 前記誘電体及び前記ナノワイヤ上に前記保護層を形成する段階は、前記誘電体及び前記ナノワイヤ上に、高誘電率保護層を形成することを含む請求項19に記載の方法。
- 前記誘電体及び前記ナノワイヤ上に前記保護層を形成する段階は、前記誘電体及び前記ナノワイヤ上に、窒化シリコン保護層を形成することを含む請求項19に記載の方法。
- 前記少なくとも1つのナノワイヤを形成する段階は、少なくとも1つのゲルマニウムナノワイヤを形成することを含む請求項19に記載の方法。
- 前記少なくとも1つのナノワイヤを形成する段階は、ゲルマニウム含有量が約50%から100%の間である少なくとも1つのゲルマニウムナノワイヤを形成することを含む請求項23に記載の方法。
- 前記少なくとも1つのゲルマニウムナノワイヤを形成する段階は、
前記基板上にマスクをパターニングする段階と、
1つの上面及び2つの対向する側面をそれぞれ有する少なくとも1つの前記フィンと、少なくとも1つの凹部とを形成するべく、前記基板をエッチングする段階と、
前記パターニングされたマスクを取り除く段階と、
前記凹部及び前記フィンの上に前記誘電体を堆積する段階と、
前記フィンそれぞれの少なくとも1つの前記側面の一部を露出させるべく、前記誘電体を後退させる段階と、
前記フィンの前記露出された側面及び前記上面に、ゲルマニウム合金クラッドを形成する段階と、
前記ゲルマニウム合金クラッドをゲルマニウムナノワイヤに変換するべく、前記ゲルマニウム合金クラッドを酸化及びアニールする段階とを含む請求項23に記載の方法。 - 前記基板上にマスクをパターニングする段階は、シリコン含有基板上にマスクをパターニングすることを含む請求項25に記載の方法。
- 前記ゲルマニウム合金クラッドを形成する段階は、シリコンゲルマニウム合金クラッドを形成することを含む請求項25に記載の方法。
- 前記少なくとも1つのナノワイヤを形成する段階及び前記ナノワイヤに隣接して誘電体を形成する段階は、
1つの上面及び2つの対向する側面をそれぞれ有する少なくとも1つのフィンと、少なくとも1つの凹部とを、シリコン含有基板に形成する段階と、
前記凹部及び前記フィンの上に前記誘電体を堆積する段階と、
前記フィンそれぞれの前記側面の一部を露出させるべく、前記誘電体を後退させる段階と、
前記フィンそれぞれの前記露出された側面及び前記上面に合金クラッドを形成する段階と、
前記合金クラッドを、ナノワイヤ及び前記ナノワイヤを実質的に囲む酸化物シェルに変換する段階と、
前記ナノワイヤ及び前記誘電体上に第2誘電体を堆積する段階と、
前記第2誘電体及び前記酸化物シェルを除去する段階と
を有する請求項19に記載の方法。
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EP2513972A2 (en) | 2012-10-24 |
KR20120087999A (ko) | 2012-08-07 |
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HK1175029A1 (zh) | 2013-06-21 |
CN102652364B (zh) | 2015-09-30 |
US20110147697A1 (en) | 2011-06-23 |
EP2513972A4 (en) | 2015-03-11 |
US20120309173A1 (en) | 2012-12-06 |
CN102652364A (zh) | 2012-08-29 |
US8269209B2 (en) | 2012-09-18 |
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