JP5489295B2 - 荷電粒子線装置及び荷電粒子線照射方法 - Google Patents

荷電粒子線装置及び荷電粒子線照射方法 Download PDF

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Publication number
JP5489295B2
JP5489295B2 JP2010271806A JP2010271806A JP5489295B2 JP 5489295 B2 JP5489295 B2 JP 5489295B2 JP 2010271806 A JP2010271806 A JP 2010271806A JP 2010271806 A JP2010271806 A JP 2010271806A JP 5489295 B2 JP5489295 B2 JP 5489295B2
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JP
Japan
Prior art keywords
sample
charged particle
electrode
ion beam
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010271806A
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English (en)
Japanese (ja)
Other versions
JP2012123942A (ja
JP2012123942A5 (enExample
Inventor
恒典 野間口
雄 関原
寿英 揚村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010271806A priority Critical patent/JP5489295B2/ja
Priority to US13/991,678 priority patent/US20130248733A1/en
Priority to EP11847394.1A priority patent/EP2650901A1/en
Priority to PCT/JP2011/077670 priority patent/WO2012077554A1/ja
Publication of JP2012123942A publication Critical patent/JP2012123942A/ja
Publication of JP2012123942A5 publication Critical patent/JP2012123942A5/ja
Application granted granted Critical
Publication of JP5489295B2 publication Critical patent/JP5489295B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/023—Means for mechanically adjusting components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2010271806A 2010-12-06 2010-12-06 荷電粒子線装置及び荷電粒子線照射方法 Expired - Fee Related JP5489295B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010271806A JP5489295B2 (ja) 2010-12-06 2010-12-06 荷電粒子線装置及び荷電粒子線照射方法
US13/991,678 US20130248733A1 (en) 2010-12-06 2011-11-30 Charged particle beam apparatus and method of irradiating charged particle beam
EP11847394.1A EP2650901A1 (en) 2010-12-06 2011-11-30 Charged particle beam apparatus and method of irradiating charged particle beam
PCT/JP2011/077670 WO2012077554A1 (ja) 2010-12-06 2011-11-30 荷電粒子線装置及び荷電粒子線照射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010271806A JP5489295B2 (ja) 2010-12-06 2010-12-06 荷電粒子線装置及び荷電粒子線照射方法

Publications (3)

Publication Number Publication Date
JP2012123942A JP2012123942A (ja) 2012-06-28
JP2012123942A5 JP2012123942A5 (enExample) 2013-04-04
JP5489295B2 true JP5489295B2 (ja) 2014-05-14

Family

ID=46207044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010271806A Expired - Fee Related JP5489295B2 (ja) 2010-12-06 2010-12-06 荷電粒子線装置及び荷電粒子線照射方法

Country Status (4)

Country Link
US (1) US20130248733A1 (enExample)
EP (1) EP2650901A1 (enExample)
JP (1) JP5489295B2 (enExample)
WO (1) WO2012077554A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6108674B2 (ja) * 2012-03-16 2017-04-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置及び試料搬送装置
US10062546B2 (en) * 2013-05-14 2018-08-28 Hitachi, Ltd. Sample holder and focused-ion-beam machining device provided therewith
US10388489B2 (en) * 2017-02-07 2019-08-20 Kla-Tencor Corporation Electron source architecture for a scanning electron microscopy system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096386A (en) * 1977-04-04 1978-06-20 Taylor-Kincaid Company Light reflecting electrostatic electron lens
DE3525994A1 (de) * 1985-07-20 1987-01-29 Philips Patentverwaltung Elektronenstrahl-aufzeichnungstraeger
JPH0734871B2 (ja) * 1989-09-14 1995-04-19 株式会社クボタ 精米機
JPH03101849U (enExample) * 1990-02-02 1991-10-23
JP3058394B2 (ja) 1994-06-23 2000-07-04 シャープ株式会社 透過電子顕微鏡用断面試料作成方法
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
DE10010523C2 (de) * 2000-03-07 2002-08-14 Schwerionenforsch Gmbh Ionenstrahlanlage zur Bestrahlung von Tumorgewebe
JP2002117796A (ja) * 2000-10-11 2002-04-19 Jeol Ltd 荷電粒子ビーム装置および集束イオンビーム装置
JP4283432B2 (ja) 2000-11-06 2009-06-24 株式会社日立製作所 試料作製装置
JP2002277364A (ja) 2001-03-19 2002-09-25 Seiko Epson Corp 薄片試料加工方法及び薄片試料の作製方法
JP3768197B2 (ja) 2003-02-28 2006-04-19 株式会社東芝 透過型電子顕微鏡観察試料の作製方法
JP4128487B2 (ja) * 2003-06-02 2008-07-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2006032154A (ja) * 2004-07-16 2006-02-02 Hiroyuki Noguchi 集束イオンビーム加工方法および集束イオンビーム加工装置
JP2007012516A (ja) * 2005-07-01 2007-01-18 Jeol Ltd 荷電粒子ビーム装置及び荷電粒子ビームを用いた試料情報検出方法
JP5142240B2 (ja) 2006-01-17 2013-02-13 株式会社日立ハイテクノロジーズ 荷電ビーム装置及び荷電ビーム加工方法
JP5016988B2 (ja) * 2007-06-19 2012-09-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびその真空立上げ方法
JP4901696B2 (ja) * 2007-11-06 2012-03-21 キヤノンアネルバ株式会社 成膜装置
JP2011146690A (ja) * 2009-12-18 2011-07-28 Canon Anelva Corp イオンビーム発生装置及びこれを用いた基板処理装置と電子デバイス製造方法

Also Published As

Publication number Publication date
US20130248733A1 (en) 2013-09-26
JP2012123942A (ja) 2012-06-28
EP2650901A1 (en) 2013-10-16
WO2012077554A1 (ja) 2012-06-14

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