JP5483659B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5483659B2 JP5483659B2 JP2007073788A JP2007073788A JP5483659B2 JP 5483659 B2 JP5483659 B2 JP 5483659B2 JP 2007073788 A JP2007073788 A JP 2007073788A JP 2007073788 A JP2007073788 A JP 2007073788A JP 5483659 B2 JP5483659 B2 JP 5483659B2
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- Prior art keywords
- layer
- region
- semiconductor
- floating gate
- semiconductor layer
- Prior art date
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- Expired - Fee Related
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073788A JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006100367 | 2006-03-31 | ||
| JP2006100367 | 2006-03-31 | ||
| JP2007073788A JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013156967A Division JP2014013901A (ja) | 2006-03-31 | 2013-07-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294910A JP2007294910A (ja) | 2007-11-08 |
| JP2007294910A5 JP2007294910A5 (https=) | 2010-04-22 |
| JP5483659B2 true JP5483659B2 (ja) | 2014-05-07 |
Family
ID=38765163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007073788A Expired - Fee Related JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5483659B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020150227A (ja) | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| CN115910798A (zh) * | 2022-12-09 | 2023-04-04 | 华中科技大学 | 一种边缘接触的高速浮栅存储器及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2656986B2 (ja) * | 1989-10-02 | 1997-09-24 | 松下電子工業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JPH03153085A (ja) * | 1989-11-10 | 1991-07-01 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| JP3737276B2 (ja) * | 1997-04-25 | 2006-01-18 | 富士通株式会社 | 半導体記憶装置 |
| JP2001101368A (ja) * | 1999-10-01 | 2001-04-13 | Tokin Corp | 集積半導体装置 |
| JP4530464B2 (ja) * | 2000-03-09 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP3984020B2 (ja) * | 2000-10-30 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2002198446A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| US20050095786A1 (en) * | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
| JP4896416B2 (ja) * | 2004-03-08 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2007
- 2007-03-21 JP JP2007073788A patent/JP5483659B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2007294910A (ja) | 2007-11-08 |
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