JP2007294910A5 - - Google Patents
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- Publication number
- JP2007294910A5 JP2007294910A5 JP2007073788A JP2007073788A JP2007294910A5 JP 2007294910 A5 JP2007294910 A5 JP 2007294910A5 JP 2007073788 A JP2007073788 A JP 2007073788A JP 2007073788 A JP2007073788 A JP 2007073788A JP 2007294910 A5 JP2007294910 A5 JP 2007294910A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- semiconductor
- floating gate
- formation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 49
- 230000015572 biosynthetic process Effects 0.000 claims 18
- 239000000463 material Substances 0.000 claims 13
- 239000012535 impurity Substances 0.000 claims 11
- 239000000956 alloy Substances 0.000 claims 8
- 150000002736 metal compounds Chemical class 0.000 claims 8
- 239000007769 metal material Substances 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 4
- 150000002291 germanium compounds Chemical class 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073788A JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006100367 | 2006-03-31 | ||
| JP2006100367 | 2006-03-31 | ||
| JP2007073788A JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013156967A Division JP2014013901A (ja) | 2006-03-31 | 2013-07-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007294910A JP2007294910A (ja) | 2007-11-08 |
| JP2007294910A5 true JP2007294910A5 (https=) | 2010-04-22 |
| JP5483659B2 JP5483659B2 (ja) | 2014-05-07 |
Family
ID=38765163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007073788A Expired - Fee Related JP5483659B2 (ja) | 2006-03-31 | 2007-03-21 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5483659B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020150227A (ja) | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| CN115910798A (zh) * | 2022-12-09 | 2023-04-04 | 华中科技大学 | 一种边缘接触的高速浮栅存储器及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2656986B2 (ja) * | 1989-10-02 | 1997-09-24 | 松下電子工業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JPH03153085A (ja) * | 1989-11-10 | 1991-07-01 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| JP3737276B2 (ja) * | 1997-04-25 | 2006-01-18 | 富士通株式会社 | 半導体記憶装置 |
| JP2001101368A (ja) * | 1999-10-01 | 2001-04-13 | Tokin Corp | 集積半導体装置 |
| JP4530464B2 (ja) * | 2000-03-09 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP3984020B2 (ja) * | 2000-10-30 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2002198446A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| US20050095786A1 (en) * | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
| JP4896416B2 (ja) * | 2004-03-08 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-03-21 JP JP2007073788A patent/JP5483659B2/ja not_active Expired - Fee Related
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