JP2007288176A5 - - Google Patents
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- Publication number
- JP2007288176A5 JP2007288176A5 JP2007073792A JP2007073792A JP2007288176A5 JP 2007288176 A5 JP2007288176 A5 JP 2007288176A5 JP 2007073792 A JP2007073792 A JP 2007073792A JP 2007073792 A JP2007073792 A JP 2007073792A JP 2007288176 A5 JP2007288176 A5 JP 2007288176A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- floating gate
- memory device
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 6
- 238000003475 lamination Methods 0.000 claims 5
- 150000002291 germanium compounds Chemical class 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073792A JP5164404B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006077893 | 2006-03-21 | ||
| JP2006077893 | 2006-03-21 | ||
| JP2007073792A JP5164404B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007288176A JP2007288176A (ja) | 2007-11-01 |
| JP2007288176A5 true JP2007288176A5 (https=) | 2010-04-15 |
| JP5164404B2 JP5164404B2 (ja) | 2013-03-21 |
Family
ID=38759602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007073792A Expired - Fee Related JP5164404B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5164404B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101508492B1 (ko) | 2008-05-09 | 2015-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 비휘발성 반도체 기억 장치 |
| US8188535B2 (en) | 2008-05-16 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device and manufacturing method thereof |
| US8198666B2 (en) | 2009-02-20 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a nonvolatile memory element having first, second and third insulating films |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153085A (ja) * | 1989-11-10 | 1991-07-01 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| US5508543A (en) * | 1994-04-29 | 1996-04-16 | International Business Machines Corporation | Low voltage memory |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2002198446A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| JP4896416B2 (ja) * | 2004-03-08 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
-
2007
- 2007-03-21 JP JP2007073792A patent/JP5164404B2/ja not_active Expired - Fee Related
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