JP2007288177A5 - - Google Patents
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- Publication number
- JP2007288177A5 JP2007288177A5 JP2007073793A JP2007073793A JP2007288177A5 JP 2007288177 A5 JP2007288177 A5 JP 2007288177A5 JP 2007073793 A JP2007073793 A JP 2007073793A JP 2007073793 A JP2007073793 A JP 2007073793A JP 2007288177 A5 JP2007288177 A5 JP 2007288177A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- floating gate
- memory device
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 239000012535 impurity Substances 0.000 claims 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 12
- 239000000463 material Substances 0.000 claims 10
- 229910052732 germanium Inorganic materials 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 5
- 150000002291 germanium compounds Chemical class 0.000 claims 5
- 238000003475 lamination Methods 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 3
- 150000003377 silicon compounds Chemical class 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073793A JP5164405B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006077894 | 2006-03-21 | ||
| JP2006077894 | 2006-03-21 | ||
| JP2007073793A JP5164405B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007288177A JP2007288177A (ja) | 2007-11-01 |
| JP2007288177A5 true JP2007288177A5 (https=) | 2010-04-15 |
| JP5164405B2 JP5164405B2 (ja) | 2013-03-21 |
Family
ID=38759603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007073793A Expired - Fee Related JP5164405B2 (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5164405B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5820353B2 (ja) | 2012-08-20 | 2015-11-24 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153085A (ja) * | 1989-11-10 | 1991-07-01 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| JP2966157B2 (ja) * | 1991-09-17 | 1999-10-25 | 沖電気工業株式会社 | ゲート電極構造の形成方法 |
| US5508543A (en) * | 1994-04-29 | 1996-04-16 | International Business Machines Corporation | Low voltage memory |
| JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2002198446A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| JP4896416B2 (ja) * | 2004-03-08 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
-
2007
- 2007-03-21 JP JP2007073793A patent/JP5164405B2/ja not_active Expired - Fee Related
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