JP2007288175A5 - - Google Patents
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- Publication number
- JP2007288175A5 JP2007288175A5 JP2007073787A JP2007073787A JP2007288175A5 JP 2007288175 A5 JP2007288175 A5 JP 2007288175A5 JP 2007073787 A JP2007073787 A JP 2007073787A JP 2007073787 A JP2007073787 A JP 2007073787A JP 2007288175 A5 JP2007288175 A5 JP 2007288175A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- floating gate
- semiconductor substrate
- channel formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 42
- 239000000758 substrate Substances 0.000 claims 21
- 230000015572 biosynthetic process Effects 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 150000002291 germanium compounds Chemical class 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073787A JP2007288175A (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006077898 | 2006-03-21 | ||
| JP2007073787A JP2007288175A (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007288175A JP2007288175A (ja) | 2007-11-01 |
| JP2007288175A5 true JP2007288175A5 (https=) | 2010-04-22 |
Family
ID=38759601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007073787A Withdrawn JP2007288175A (ja) | 2006-03-21 | 2007-03-21 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007288175A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021150524A (ja) * | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2656986B2 (ja) * | 1989-10-02 | 1997-09-24 | 松下電子工業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JPH10189954A (ja) * | 1996-12-20 | 1998-07-21 | Sony Corp | 半導体装置 |
| JPH1140682A (ja) * | 1997-07-18 | 1999-02-12 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP2001101368A (ja) * | 1999-10-01 | 2001-04-13 | Tokin Corp | 集積半導体装置 |
| JP3984020B2 (ja) * | 2000-10-30 | 2007-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP2002198446A (ja) * | 2000-12-27 | 2002-07-12 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
| JP4472934B2 (ja) * | 2002-03-27 | 2010-06-02 | イノテック株式会社 | 半導体装置および半導体メモリ |
| US20050095786A1 (en) * | 2003-11-03 | 2005-05-05 | Ting-Chang Chang | Non-volatile memory and method of manufacturing floating gate |
-
2007
- 2007-03-21 JP JP2007073787A patent/JP2007288175A/ja not_active Withdrawn
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