JP5164404B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP5164404B2
JP5164404B2 JP2007073792A JP2007073792A JP5164404B2 JP 5164404 B2 JP5164404 B2 JP 5164404B2 JP 2007073792 A JP2007073792 A JP 2007073792A JP 2007073792 A JP2007073792 A JP 2007073792A JP 5164404 B2 JP5164404 B2 JP 5164404B2
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semiconductor
insulating layer
semiconductor layer
floating gate
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JP2007073792A
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Japanese (ja)
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JP2007288176A5 (https=
JP2007288176A (ja
Inventor
舜平 山崎
良信 浅見
圭恵 高野
誠 古野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2007288176A5 publication Critical patent/JP2007288176A5/ja
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JP2007073792A 2006-03-21 2007-03-21 不揮発性半導体記憶装置 Expired - Fee Related JP5164404B2 (ja)

Priority Applications (1)

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JP2007073792A JP5164404B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006077893 2006-03-21
JP2006077893 2006-03-21
JP2007073792A JP5164404B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

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JP2007288176A JP2007288176A (ja) 2007-11-01
JP2007288176A5 JP2007288176A5 (https=) 2010-04-15
JP5164404B2 true JP5164404B2 (ja) 2013-03-21

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JP2007073792A Expired - Fee Related JP5164404B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101508492B1 (ko) 2008-05-09 2015-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비휘발성 반도체 기억 장치
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
US8198666B2 (en) 2009-02-20 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a nonvolatile memory element having first, second and third insulating films

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03153085A (ja) * 1989-11-10 1991-07-01 Fujitsu Ltd 半導体記憶装置及びその製造方法
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JP3594550B2 (ja) * 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法
JP2002198446A (ja) * 2000-12-27 2002-07-12 Fujitsu Ltd 半導体記憶装置とその製造方法
JP4472934B2 (ja) * 2002-03-27 2010-06-02 イノテック株式会社 半導体装置および半導体メモリ
JP4896416B2 (ja) * 2004-03-08 2012-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자

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