JP5463299B2 - 細長い、交差指型のエミッタ領域およびベース領域をうら側に有する裏面電極型太陽電池ならびにその製造方法 - Google Patents
細長い、交差指型のエミッタ領域およびベース領域をうら側に有する裏面電極型太陽電池ならびにその製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
3 うら側表面
5 エミッタ領域(エミッタ指領域)
7 ベース領域(ベース指領域)
9 電気絶縁層
11 エミッタ電極(エミッタ指電極)
13 ベース電極(ベース指電極)
21 エミッタブスバー
23 ベースブスバー
Claims (8)
- 半導体基板(1);
該半導体基板(1)のうら側表面(3)上の細長いベース領域(7)であって、ベースの半導体型をもつ該ベース領域(7);
該半導体基板(1)のうら側表面(3)上の細長いエミッタ領域(5)であって、ベースの半導体型とは反対のエミッタの半導体型をもつ該エミッタ領域(5);
該細長いエミッタ領域(5)を横断する、該エミッタ領域(5)と電気的に接触するための細長いエミッタ電極(11);および
該細長いベース領域(7)を横断する、該ベース領域(7)と電気的に接触するための細長いベース電極(13);を有する裏面電極型太陽電池であって、
前記半導体基板(1)の前記うら側表面(3)の少なくとも一部において、前記細長いエミッタ領域(5)と前記細長いベース領域(7)とは相互に噛み合う第1の交差指型構造を備え、
前記細長いエミッタ電極(11)と前記細長いベース電極(13)とは相互に噛み合う第2の交差指型構造を備え、
前記細長いエミッタ領域(5)と前記細長いベース電極(13)とが電気絶縁層(9)によって絶縁され、前記細長いベース領域(7)と前記細長いエミッタ電極(11)とが電気絶縁層(9)によって絶縁され、
前記第1の交差指型構造の前記細長いエミッタ領域(5)の指の幅W e は、前記第2の交差指型構造の前記細長いエミッタ電極(11)の指の幅W E よりも小さく、前記第1の交差指型構造の前記細長いベース領域(7)の指の幅W b は、前記第2の交差指型構造の前記細長いベース電極(13)の指の幅W B よりも小さく、
前記半導体基板(1)の前記うら側表面(3)の少なくとも一部において、複数の細長いエミッタ領域(5)および複数の細長いベース領域(7)が、それぞれ、互いに互い違いに隣接して配置され、
複数の細長いエミッタ電極(11)および複数の細長いベース電極(13)がそれぞれ、互いに互い違いに隣接して配置され、
隣接するエミッタ領域およびベース領域の間の中心間距離が隣接するエミッタ電極およびベース電極の間の中心間距離よりも小さいことを特徴とする裏面電極型太陽電池。 - 前記細長いエミッタ領域(5)および/または前記細長いベース領域(7)の前記指の幅の平均が太陽電池の同じ領域の前記細長いエミッタ電極(11)および/または前記細長いベース電極(13)の前記指の幅の平均よりも少なくとも10%少ない、請求項1に記載の裏面電極型太陽電池。
- 前記細長いエミッタ電極(11)が前記細長いベース領域(7)を横断し、前記細長いベース電極(13)が細長いエミッタ領域(5)を横断する、請求項1または2に記載の裏面電極型太陽電池。
- 前記半導体基板(1)のうら側表面(3)上の前記細長いベース領域(7)において、該半導体基板(1)の内部のベース領域よりも電気伝導性が高い、請求項1〜3のいずれかに記載の裏面電極型太陽電池。
- 前記エミッタ領域および前記ベース領域(5,7)が前記半導体基板(1)のうら側表面(3)に沿って実質的に均一に分散されている、請求項1〜4のいずれかに記載の裏面電極型太陽電池。
- 前記細長いベース領域(7)がエミッタブスバー(21)によって覆われる領域に突き出している、請求項1〜5のいずれかに記載の裏面電極型太陽電池。
- 前記細長いエミッタ領域(5)がベースブスバー(23)によって覆われる領域に突き出している、請求項1〜6のいずれかに記載の裏面電極型太陽電池。
- 半導体基板(1)を用意する;
該半導体基板(1)のうら側表面(3)上に細長いベース領域(7)であって、ベースの半導体型をもつベース領域(7)を形成する;
該半導体基板(1)のうら側表面(3)上に細長いエミッタ領域(5)であって、ベースの半導体型とは反対のエミッタの半導体型をもつエミッタ領域(5)を形成する;
該細長いエミッタ領域(5)を横断する、該エミッタ領域(5)に接触するための細長いエミッタ電極(11)を形成する;および
該細長いベース領域(7)を横断する、該ベース領域(7)に接触するための細長いベース電極(13)を形成する;工程を含む太陽電池を製造する方法であって、
前記半導体基板(1)の前記うら側表面(3)の少なくとも一部において、前記細長いエミッタ領域(5)と前記細長いベース領域(7)とは相互に噛み合う第1の交差指型構造を備え、
前記細長いエミッタ電極(11)と前記細長いベース電極(13)とは相互に噛み合う第2の交差指型構造を備え、
前記細長いエミッタ領域(5)と前記細長いベース電極(13)とが電気絶縁層(9)によって絶縁され、前記細長いベース領域(7)と前記細長いエミッタ電極(11)とが電気絶縁層(9)によって絶縁され、
前記第1の交差指型構造の前記細長いエミッタ領域(5)の指の幅W e は、前記第2の交差指型構造の前記細長いエミッタ電極(11)の指の幅W E よりも小さく、
前記第1の交差指型構造の前記細長いベース領域(7)の指の幅W b は、前記第2の交差指型構造の前記細長いベース電極(13)の指の幅W B よりも小さく、
前記半導体基板(1)の前記うら側表面(3)の少なくとも一部において、複数の細長いエミッタ領域(5)および複数の細長いベース領域(7)が、それぞれ、互いに互い違いに隣接して配置され、
複数の細長いエミッタ電極(11)および複数の細長いベース電極(13)が、それぞれ、互いに互い違いに隣接して配置され、
隣接するエミッタ領域およびベース領域の間の中心間距離が隣接するエミッタ電極およびベース電極の間の中心間距離よりも小さいことを特徴とする裏面電極型太陽電池を製造する方法。
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DE102007059486.2 | 2007-12-11 | ||
DE102007059486A DE102007059486A1 (de) | 2007-12-11 | 2007-12-11 | Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür |
PCT/EP2008/066432 WO2009074466A1 (de) | 2007-12-11 | 2008-11-28 | Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten emitter- und basisbereichen an der rückseite und herstellungsverfahren hierfür |
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JP5463299B2 true JP5463299B2 (ja) | 2014-04-09 |
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EP (1) | EP2218107B1 (ja) |
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CN (1) | CN101952972B (ja) |
DE (1) | DE102007059486A1 (ja) |
WO (1) | WO2009074466A1 (ja) |
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CN101952972B (zh) | 2012-02-15 |
WO2009074466A1 (de) | 2009-06-18 |
US20110041908A1 (en) | 2011-02-24 |
JP2011507245A (ja) | 2011-03-03 |
CN101952972A (zh) | 2011-01-19 |
EP2218107B1 (de) | 2016-10-19 |
DE102007059486A1 (de) | 2009-06-18 |
EP2218107A1 (de) | 2010-08-18 |
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