JP2015515257A - 裏面コンタクト裏面接合ソーラーセルの抵抗構成要素の取り出し方法 - Google Patents
裏面コンタクト裏面接合ソーラーセルの抵抗構成要素の取り出し方法 Download PDFInfo
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Abstract
Description
本出願は、2012年4月23日に出願された米国特許仮出願第61/637,126号に対する優先権を主張し、当該特許仮出願は引用により全体が本明細書に組み込まれる。
(技術分野)
本開示は、一般に、半導体処理の分野に関する。より詳細には、本開示は、裏面コンタクト太陽電池セル(ソーラーセル)から電気的パラメータ値を取り出すための方法及び構造に関する。
−直列抵抗構成要素の全ては、完成したソーラーセル上で直接測定することができ、従って、複数の基板及び試験構造を使用する必要性が排除される(種々の相互作用を考慮する必要がない)。
−開示された試験構造を利用するウェーハは、製品ウェーハと同時に処理され、製品と同じ処理条件下での値を表す測定を可能にする。
試験構造は、ウェーハにわたるパラメータの変動を測定するよう再構成され、すなわち、直列抵抗Rの空間的変動だけでなく、ソーラーセルにわたる個別の構成要素への内訳(プロセス開発中の故障解析において特に有用とすることができる測定値)も取り出すことができる。
試験構造は、製品セルに組み込むことができ、取り出された直列抵抗データを用いて、セル線路の正常性を測定することができる。
Claims (13)
- 裏面コンタクト結晶半導体ソーラーセルの試験構造体であって、
結晶ソーラーセル基板の裏面上にエミッタ電極及びベース電極の櫛形パターンを有する第1の導電性メタライゼーション層と、
前記結晶基板の裏面に取り付けられ、前記第1のメタライゼーション層を第2の導電性メタライゼーション層から電気的に絶縁する電気絶縁層と、
前記電気絶縁層内に形成された導電性ビアホールを介して前記第1の導電性相互接続層に高伝導度のセル相互接続を提供する第2の導電性メタライゼーション層と、
を備え、前記第2の導電性相互接続層が、エミッタ電極とベース電極の櫛形パターンを有し、
前記裏面コンタクト結晶半導体ソーラーセルの試験構造体が更に、
前記第2の導電性メタライゼーション層に接触し、前記ソーラーセル構造体の少なくとも1つの電気的パラメータ値構成要素を取り出す導電性抵抗試験構造体と、
を備える、裏面コンタクト結晶半導体ソーラーセルの試験構造体。 - 前記導電性抵抗試験構造体が、前記第2の導電性メタライゼーション層に接続された金属ブロック試験構成要素を含み、前記導電性抵抗試験構造体が、前記第1の導電性メタライゼーション層には接触しない、請求項1に記載の裏面コンタクト結晶半導体ソーラーセルの試験構造体。
- 前記導電性抵抗試験構造体が、前記第1の導電性メタライゼーション層のベース電極に接触したベースブロック試験構成要素を含む、請求項1に記載の裏面コンタクト結晶半導体ソーラーセルの試験構造体。
- 前記導電性抵抗試験構造体が、前記第1の導電性メタライゼーション層のエミッタ電極に接触したエミッタブロック試験構成要素を含む、請求項1に記載の裏面コンタクト結晶半導体ソーラーセルの試験構造体。
- 前記導電性抵抗試験構造体が更に、
前記導電性抵抗試験構造体は前記第1の導電性メタライゼーション層には接触していない状態で、前記第2の導電性メタライゼーション層に接触した金属ブロック試験構成要素と、
前記第1の導電性メタライゼーション層のベース電極に接触したベースブロック試験構成要素と、
前記第1の導電性メタライゼーション層のエミッタ電極に接触したエミッタブロック試験構成要素と、
を含む、請求項1に記載の裏面コンタクト結晶半導体ソーラーセルの試験構造体。 - 裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法であって、
結晶半導体ソーラーセル基板の裏面上にベース電極及びエミッタ電極の櫛形パターンを有する導電性金属の第1の層を形成するステップと、
前記導電性金属の第1の層上に電気絶縁層を形成するステップと、
を含み、前記誘電体層が、前記導電性金属の第1の層と導電性金属の第2の層との間に電気的絶縁を提供し、
前記方法が更に、
前記電気絶縁層にビアを形成して、前記導電性金属の第1の層へのアクセスを可能にするステップと、
前記電気絶縁層上に、前記ビアを介して前記導電性金属の第1の層に接触する第2の導電性メタライゼーション層を形成するステップと、
前記第2の導電性メタライゼーション層を電流又は電圧を用いて探査することにより前記裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を取り出すステップと、
を含む、方法。 - 前記電気的パラメータ値が、前記第2の導電性メタライゼーション層、前記ビア、及び前記第1の導電性メタライゼーション層の抵抗である、請求項6に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。
- 前記電気的パラメータ値が、前記結晶半導体ソーラーセル基板のベース拡散抵抗である、請求項6に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。
- 前記電気的パラメータ値が、前記結晶半導体ソーラーセル基板のエミッタ拡散抵抗である、請求項6に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。
- 前記第2の導電性メタライゼーション層、前記ビア、及び前記第1の導電性メタライゼーション層の抵抗を測定するステップと、
前記結晶半導体ソーラーセル基板のベース拡散抵抗を測定するステップと、
前記結晶半導体ソーラーセル基板のエミッタ拡散抵抗を測定するステップと、
を更に含む、請求項6に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。 - 裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法であって、
結晶半導体ソーラーセル基板の裏面上にベース電極及びエミッタ電極の櫛形パターンを有する導電性金属の第1の層を形成するステップと、
前記導電性金属の第1の層上に電気絶縁層を形成するステップと、
を含み、前記誘電体層が、前記導電性金属の第1の層と導電性金属の第2の層との間に電気的絶縁を提供し、
前記方法が更に、
前記電気絶縁層にビアを形成して、前記導電性金属の第1の層へのアクセスを可能にするステップと、
前記電気絶縁層上に、前記ビアを介して前記導電性金属の第1の層に接触する第2の導電性メタライゼーション層を形成するステップと、
を含み、前記第2の導電性メタライゼーション層が、前記エミッタ電極に接触するエミッタブロックと前記ベース電極に接触するベースブロックとを含むパターンを有し、
前記方法が更に、
前記ベースブロックを電流又は電圧を用いて探査することにより前記結晶半導体ソーラーセル基板のベース拡散抵抗を測定するステップと、
前記エミッタブロックを電流又は電圧を用いて探査することにより前記結晶半導体ソーラーセル基板のエミッタ拡散抵抗を測定するステップと、
前記第2の導電性メタライゼーション層をベース導体フィンガー及びエミッタ導体フィンガーの櫛形パターンとして形成するステップと、
を含む、方法。 - 前記ベース導体フィンガー及びエミッタ導体フィンガーの櫛形パターンが、前記ベース電極及びエミッタ電極の櫛形パターンに平行にパターン形成される、請求項11に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。
- 前記ベース導体フィンガー及びエミッタ導体フィンガーの櫛形パターンが、前記ベース電極及びエミッタ電極の櫛形パターンに垂直にパターン形成される、請求項11に記載の裏面コンタクト結晶半導体ソーラーセルから電気的パラメータ値を測定する方法。
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PCT/US2013/037863 WO2013163231A1 (en) | 2012-04-23 | 2013-04-23 | Resistance component extraction for back contact back junction solar cells |
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US8828784B2 (en) * | 2012-04-23 | 2014-09-09 | Solexel, Inc. | Resistance component extraction for back contact back junction solar cells |
CN103812442A (zh) * | 2013-11-22 | 2014-05-21 | 奥特斯维能源(太仓)有限公司 | 一种光伏电池组件铝箔铺设方法 |
US20150206998A1 (en) * | 2013-12-02 | 2015-07-23 | Solexel, Inc. | Passivated contacts for back contact back junction solar cells |
WO2016036892A1 (en) * | 2014-09-02 | 2016-03-10 | Solexel, Inc. | Dual level solar cell metallization having first level metal busbars |
US20170331427A1 (en) * | 2014-11-07 | 2017-11-16 | Solexel, Inc. | Temporary Field Assisted Passivation For Testing Of Partially Processed Photovoltaic Solar Cells |
US9837561B2 (en) | 2015-03-13 | 2017-12-05 | Natcore Technology, Inc. | Laser processed back contact heterojunction solar cells |
JP6665166B2 (ja) | 2015-03-31 | 2020-03-13 | 株式会社カネカ | 太陽電池モジュールおよびその製造方法 |
US10290750B2 (en) * | 2015-08-26 | 2019-05-14 | Natcore Technology, Inc. | Systems and methods for forming foil contact rear emitter solar cell |
WO2018236885A1 (en) * | 2017-06-20 | 2018-12-27 | Natcore Technology, Inc. | SYSTEM AND METHODS FOR FORMING SINGLE-CONTACT BACK-EMITTING SOLAR CELLS WITH SELECTIVE CONTACTS OF CARRIERS |
CN108010862B (zh) * | 2017-12-07 | 2020-08-28 | 江苏日托光伏科技股份有限公司 | 一种mwt太阳能电池的快速检测方法 |
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