JP5458486B2 - アレイ基板、表示装置、及びその製造方法 - Google Patents
アレイ基板、表示装置、及びその製造方法 Download PDFInfo
- Publication number
- JP5458486B2 JP5458486B2 JP2007270090A JP2007270090A JP5458486B2 JP 5458486 B2 JP5458486 B2 JP 5458486B2 JP 2007270090 A JP2007270090 A JP 2007270090A JP 2007270090 A JP2007270090 A JP 2007270090A JP 5458486 B2 JP5458486 B2 JP 5458486B2
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- Japan
- Prior art keywords
- film
- thin film
- resist
- conductive film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims description 210
- 239000010409 thin film Substances 0.000 claims description 80
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- 229910052771 Terbium Inorganic materials 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/48—Flattening arrangements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007270090A JP5458486B2 (ja) | 2006-11-22 | 2007-10-17 | アレイ基板、表示装置、及びその製造方法 |
TW096143429A TW200832719A (en) | 2006-11-22 | 2007-11-16 | Array substrae, display device, and method for manufacturing the array substrate |
US11/943,976 US9645457B2 (en) | 2006-11-22 | 2007-11-21 | Array substrate, display device, and method for manufacturing the array substrate |
KR1020070119535A KR20080046604A (ko) | 2006-11-22 | 2007-11-22 | 어레이 기판, 표시장치 및 그 제조 방법 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006315579 | 2006-11-22 | ||
JP2006315579 | 2006-11-22 | ||
JP2007270090A JP5458486B2 (ja) | 2006-11-22 | 2007-10-17 | アレイ基板、表示装置、及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008152236A JP2008152236A (ja) | 2008-07-03 |
JP5458486B2 true JP5458486B2 (ja) | 2014-04-02 |
Family
ID=39517343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007270090A Active JP5458486B2 (ja) | 2006-11-22 | 2007-10-17 | アレイ基板、表示装置、及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5458486B2 (zh) |
KR (1) | KR20080046604A (zh) |
CN (1) | CN101202286A (zh) |
TW (1) | TW200832719A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010047288A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
JP5339356B2 (ja) * | 2009-04-03 | 2013-11-13 | パナソニック液晶ディスプレイ株式会社 | 表示装置 |
JP5594084B2 (ja) * | 2010-11-19 | 2014-09-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
TWI419097B (zh) * | 2011-01-11 | 2013-12-11 | E Ink Holdings Inc | 顯示器 |
JP5950638B2 (ja) | 2012-03-12 | 2016-07-13 | 三菱電機株式会社 | 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4264675B2 (ja) * | 1998-08-17 | 2009-05-20 | 栄 田中 | 液晶表示装置とその製造方法 |
JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
JP4675504B2 (ja) * | 2001-06-20 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | マスクパターンの設計方法 |
JP3783707B2 (ja) * | 2003-03-19 | 2006-06-07 | セイコーエプソン株式会社 | 検査素子付基板並びに電気光学装置用基板及び電気光学装置及び電子機器 |
US8064003B2 (en) * | 2003-11-28 | 2011-11-22 | Tadahiro Ohmi | Thin film transistor integrated circuit device, active matrix display device, and manufacturing methods of the same |
JP4802462B2 (ja) * | 2004-07-27 | 2011-10-26 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
JP4096933B2 (ja) * | 2004-09-30 | 2008-06-04 | セイコーエプソン株式会社 | パターンの形成方法 |
JP3922280B2 (ja) * | 2004-09-30 | 2007-05-30 | セイコーエプソン株式会社 | 配線パターンの形成方法及びデバイスの製造方法 |
JP4805587B2 (ja) * | 2005-02-24 | 2011-11-02 | エーユー オプトロニクス コーポレイション | 液晶表示装置とその製造方法 |
KR101190045B1 (ko) * | 2005-12-21 | 2012-10-12 | 엘지디스플레이 주식회사 | 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법 |
-
2007
- 2007-10-17 JP JP2007270090A patent/JP5458486B2/ja active Active
- 2007-11-16 TW TW096143429A patent/TW200832719A/zh unknown
- 2007-11-22 CN CNA2007101596500A patent/CN101202286A/zh active Pending
- 2007-11-22 KR KR1020070119535A patent/KR20080046604A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20080046604A (ko) | 2008-05-27 |
TW200832719A (en) | 2008-08-01 |
JP2008152236A (ja) | 2008-07-03 |
CN101202286A (zh) | 2008-06-18 |
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